ライフサイエンスコーパス: wide band

1 The ERG was amplified under wide-band (1-1000 Hz) conditions, digitized at 6144 Hz/e

2 The gate-tunable wide-band absorption of graphene makes it suitable for l

3 ons labeled by pre-SMA injections occupied a wide band and were especially concentrated in the VLx an

4 Zone III was composed of radial, 0.1-mm-wide bands arranged in a periodic fashion in the most pe

5 of large transition matrix elements between wide bands, cerium fluorosulfide presents an alternative

6 oposed that, in addition to participating in wide band cochlear sound amplification, prestin may also

7 Wide-band electrical activity (0.1-3000 Hz) was recorded

8 es to study two broad materials classes: (i) wide band gap AB compounds and (ii) rare earth-main grou

9 s were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to

10 Ds involves coating the core material with a wide band gap inorganic shell material (type-I CS QD).

11 us, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators.

12 Both materials are wide band gap n-type semiconductors and they can interac

13 However, the short length and wide band gap of these graphene nanoribbons have prevent

14 However, the relatively wide band gap of TiO2 significantly limits its use under

15 icient and long-term stable p-type doping of wide band gap organic materials, charge-generation junct

16 nd gap semiconducting polymer and a matching wide band gap polymer.

17 light emitting device with a nanostructured, wide band gap semiconductor layer.

18 gy savings associated with the deployment of wide band gap semiconductors are estimated to range from

19 orber for multi-junction device applications.Wide band gap semiconductors are important for the devel

20 as well as the market adoption potential of wide band gap semiconductors in electric vehicles.

21 s derivatives are stable and extremely thin, wide band gap semiconductors that promise to replace con

22 con carbide and gallium nitride, two leading wide band gap semiconductors with significant potential

23 concept for plasmonic photosensitization of wide band gap semiconductors, leading to efficient conve

24 tability, electrochemical reversibility, and wide band gap useful for organic light-emitting diodes (

25 y and first-principles calculations reveal a wide band gap variation in this material from 0 (bulk) t

26 lphide subjected to biaxial strain can embed wide band gap variations overlapping the visible light s

27 Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-p

28 rs are generated upon light irradiation of a wide-band gap semiconductor which can be applied to sola

29 efined nanocrystal arrays into a matrix of a wide-band gap semiconductor, which preserves optoelectro

30 Spin defects in wide-band gap semiconductors are promising systems for t

31 Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based

32 ed to a wide range of point defects in other wide-band gap semiconductors, paving the way to controll

33 BN) is known as promising 2D material with a wide band-gap (~6 eV).

34 doping size-mismatched functional atoms into wide band-gap materials.

35 spectroscopy, we prepared a minimal DQD in a wide band-gap semiconductor matrix.

36 These wide band-gap semiconductor nanowires form natural laser

37 ZnO is a wide band-gap semiconductor with piezoelectric propertie

38 deep-ultraviolet optoelectronic devices and wide-band-gap bipolar electronic devices of the future.

39 The all-PSCs with the wide-band-gap polymer PBDB-T as donor and PZ1 as accepto

40 The experiments revealed that the underlying wide-band-gap semiconductor has a large influence on the

41 which is a prototypical nuclear ceramic and wide-band-gap semiconductor material.

42 TiO2 is a wide-band-gap semiconductor, and it is an important mate

43 ion to both p- and n-type doping problems in wide-band-gap semiconductors and offers an unconventiona

44 Impurity-based p-type doping in wide-band-gap semiconductors is inefficient at room temp

45 terface and suggests that GaN is a promising wide-band-gap support material for photocatalysis and el

46 were shown to be p-type semiconductors with wide band gaps and able to support multiple stable catio

47 Magnetic oxide semiconductors with wide band gaps have promising spintronic applications, e

48 otochemistry of Earth-abundant minerals with wide band gaps would have potentially played a critical

49 ver they often suffer from short lengths and wide band gaps.

50 h a single type of linker exhibit relatively wide band gaps; however, by mixing linkers of a low-lyin

51 s evaluated with conventional gray-scale and wide-band harmonic US at baseline and again during intra

52 ly extensive stimuli, results from increased wide-band input attributable to activation of larger pop

53 t of broadband illumination sources (such as wide-band light emitting diodes or even sunlight) to imp

54 ssion from the blend that occurs in a 300-nm-wide band located at the interface between the different

55 A 10 mum wide band microelectrode composed of PEDOT:Tosylate, an

56 In Experiment 1 a 180 degrees SSwap of wide band noise (WBN) was compared with WBN Onset and Of

57 Exposure to wide-band noise at a level of 120 dB for 3 hours per day

58 the physiological responses of AVCN cells to wide-band noise were analyzed using the simulated respon

59 es are no longer quasiparticles but occupy a wide band of energy.

60 Light trapping across a wide band of frequencies is important for applications s

61 tivity and low side lobe levels for an ultra-wide band of frequencies, spanning over three octaves.

62 o swiftly modulate gamma oscillations over a wide band of frequencies.

63 igh-speed processing units, operating over a wide band of microwave frequencies.

64 s were mechanically created, removing a 3 mm wide band of the cell layer across the diameter of the w

65 s were mechanically created, removing a 3 mm wide band of the cell layer.

66 to a critical value, a desert forms across a wide band of the planet.

67 is effect, which was observed in a 50-microm wide band of tissue surrounding each pathology, was exer

68 AG laser allows the activation of 1.7-micron-wide bands of the electrode surface (available for facil

69 of the delta-NH(3)(+) of Orn(+) occurs over wide bands of up to 5 pH units, a feature of polyelectro

70 tory approach, we studied gamma ERS in 10-Hz-wide bands (overlapping by 5 Hz) ranging from 30 to 100

71 Graphene has the potential for high-speed, wide-band photodetection, but only with very low externa

72 The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz.

73 oss is identified (even mild or unilateral), wide-band sound therapy, and counselling.

74 ry, (b) low coherence-time pumping and ultra-wide-band spectral detection, and (c) focused pumping an

75 onlinear processes to signal the presence of wide-band spectral features.

76 n ultrasonic imaging requires high frequency wide band ultrasonic transducers, which produce short pu

77 ses the egg as a shallow, roughly 20 degrees-wide band which vanishes at the antipode some minutes la

78 odified consumer camera, was used to capture wide-band wide-field-of-view fluorescence images during