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1 FET devices constructed with the red phosphorus nanowire
2 In the highlight demonstration, the MoS(2) FET crossbar array optically images 1000 handwritten dig
3 ectrical characteristics of suspended MoS(2) FET, gating potential was applied through an electrolyte
6 her (two orders of magnitude) than that of a FET based on an unsuspended CNT and about 50% sensing su
11 chieve hysteresis-free subthermionic SS, and FETs that can operate in the quantum-capacitance limit a
15 tability, and sensitivity, the aptamer-based FET biosensor has potential as a point-of-care diagnosis
17 evolving field of 1D and 2D materials-based FET biosensors, with an emphasis on structure and electr
18 toward the application of nanomaterial-based FET sensors for biochemical sensing in physiological env
19 y applicable to nanotube- and nanowire-based FETs, oxide semiconductors, and organic-material-based t
20 we review the state-of-the-art of TMD-based FETs and summarize the current understanding of interfac
21 temperature in the MoS2 negative-capacitance FETs as the result of negative capacitance due to the ne
23 se a biased conducting AFM tip to gate a CNT-FET at the nanoscale and demonstrate that the strongest
24 t the critical role of metallic tubes in CNT-FET biosensor devices and demonstrate that network compo
26 arbon nanotube field-effect transistors (CNT-FETs) are a simple and cost-effective alternative for co
27 arbon nanotube field-effect transistors (CNT-FETs) have benefitted from improved separation technique
30 les fabrication of perovskite single-crystal FETs with high mobility of up to ~15 cm(2) V(-1) s(-1) a
31 lications of electric double layer FETs (EDL-FETs), a triboiontronic transistor is proposed to bridge
32 namic concentration ranges of the QCR and EG-FET chemosensors were 0.15 mM and 0.15 to 1.25 mM as wel
37 lectrolyte gated field-effect transistor (EG-FET) methods in a single analytical device we introduce
38 ve extended-gate field-effect transistor (EG-FET) transducer leads to highly selective HSA determinat
39 or extended-gate field-effect transistor (EG-FET) transducers integrated with molecularly imprinted p
42 ver, existing proposals for electrostrictive FET applications typically adopt approaches that are ent
43 bsolute uptake in tumor was higher for (18)F-FET (3.5 +/- 0.8 percentage injected dose [%ID]/g) than
44 Ds [%]), with regards to AC-CTref: for (18)F-FET (A)-SUVs as well as volumes of interest (VOIs) defin
47 y induce significant treatment-related (18)F-FET and (3)H-MET uptake near the resection cavity in the
49 ake with a mean L/B of 2.0 +/- 0.3 for (18)F-FET and a mean L/B of 1.7 +/- 0.2 for (3)H-MET was noted
50 y the perfusion and internalization of (18)F-FET by cells in various tissues of the rat, whereas grap
53 e model allowed adequate decoupling of (18)F-FET perfusion and internalization by cells in the differ
55 32 BMs) treated with ICI or TT who had (18)F-FET PET (n = 60 scans) for treatment monitoring from 201
56 23 d; range, 6-44 d) and postoperative (18)F-FET PET (time after surgery: median, 14 d; range, 5-28 d
59 The predictive value of changes of (18)F-FET PET and MRI parameters on survival was evaluated sub
60 n the corresponding centers of mass in (18)F-FET PET and MRS imaging of Cho/NAA, determined by simult
61 etabolism during epileptic seizures by (18)F-FET PET and to elucidate the pathophysiologic background
62 e study and had 27 early postoperative (18)F-FET PET exams performed preferentially in a hybrid PET/M
65 Metabolic responders to ICI or TT on (18)F-FET PET had a significantly longer stable follow-up (thr
69 dual tumor suggests that supplementary (18)F-FET PET is relevant in cases where reoperation for resid
72 e glioma, we investigated the value of (18)F-FET PET monitoring of primarily (18)F-FET-negative gliom
77 In all lesions, static and dynamic (18)F-FET PET parameters were obtained (i.e., mean tumor-to-br
78 Conclusion: Our study confirmed that (18)F-FET PET provides valuable information for assessing the
80 stases without prior local therapy and (18)F-FET PET scanning were retrospectively identified in 2 ce
81 stases without prior local therapy and (18)F-FET PET scanning were retrospectively identified in 2 ce
82 11 of 27 cases (41%), results from the (18)F-FET PET scans added relevant clinical information, inclu
84 y, we evaluated pre- and postoperative (18)F-FET PET scans of glioma patients with particular emphasi
86 progression in MRI when no concomitant (18)F-FET PET was available, but subsequent follow-up PET was
87 artment, the diagnostic performance of (18)F-FET PET was convincing but slightly inferior to that of
92 acteristic analysis yielded an optimal (18)F-FET TBR(max) cutoff of 1.95 (sensitivity, 70%; specifici
94 s, slope, and tumor-to-brain ratios of (18)F-FET uptake (18-61 min after injection) were evaluated us
97 um tumor-to-brain ratios (TBR(max)) of (18)F-FET uptake and the slope of the time-activity curves (20
98 periments detected reactive changes in (18)F-FET uptake at the rim of the resection cavity within the
100 erved, with a considerable increase in (18)F-FET uptake compared with preoperative values in either t
101 Fourteen of 23 patients showed tumoral (18)F-FET uptake concurrent to and 4 of 23 before MRI-derived
105 low-up in 5 patients showed decreasing (18)F-FET uptake in the flare areas in 4 patients and progress
110 The maximum lesion-to-brain ratio for (18)F-FET uptake near the resection cavity was significantly h
111 BRmax) and dynamic analysis of tumoral (18)F-FET uptake over time (increasing vs. decreasing) includi
115 s in tumor-to-brain ratios or slope of (18)F-FET uptake were observed in PET and autoradiography (P >
116 etastases predominantly show increased (18)F-FET uptake, and only a third of metastases < 1.0 cm were
117 etastases predominantly show increased (18)F-FET uptake, and only a third of metastases < 1.0 cm were
119 1.0 cm diameter all showed pathologic (18)F-FET uptake, which did not correlate with lesion size.
120 reased seizure-associated strict gyral (18)F-FET uptake, which was reversible in follow-up studies or
122 O-(2-(18)F-fluoroethyl)-l-tyrosine ((18)F-FET) (7 studies, 172 lesions) demonstrated a sensitivity
123 ies using (18)F-fluoro-ethyl-tyrosine ((18)F-FET) (n = 31) and (68)Ga-DOTANOC (n = 7) and studies of
124 ake of 2-(18)F-fluoroethyl-l-tyrosine ((18)F-FET) and l-[methyl-(3)H]-methionine ((3)H-MET) in residu
125 ng O-(2-(18)F-fluoroethyl)-l-tyrosine ((18)F-FET) and proton MR spectroscopy (MRS) imaging of cell tu
126 ng O-(2-(18)F-fluoroethyl)-l-tyrosine ((18)F-FET) has been shown to be a useful tool for detecting TP
127 th O-(2-(18)F-fluoroethyl)-l-tyrosine ((18)F-FET) has gained increasing importance for glioma managem
128 O-(2-(18)F-fluoroethyl)-l-tyrosine ((18)F-FET) is a radiolabeled artificial amino acid used in PET
129 ng O-(2-(18)F-fluoroethyl)-l-tyrosine ((18)F-FET) is useful to detect residual tumor tissue after gli
130 ng O-(2-(18)F-fluoroethyl)-l-tyrosine ((18)F-FET) may be helpful for solving this diagnostic problem.
131 d O-(2-[(18)F]fluoroethyl)-l-tyrosine ((18)F-FET) PET for response assessment in glioma patients afte
132 of O-(2-(18)F-fluoroethyl)-l-tyrosine ((18)F-FET) PET for treatment monitoring of immune checkpoint i
133 operative (18)F-fluoro-ethyl-tyrosine ((18)F-FET) PET in children and adolescents would improve diagn
134 O-(2-(18)F-fluoroethyl)-l-tyrosine ((18)F-FET) PET is a well-established method increasingly used
137 imaging, and dosimetric profile makes (18)F-FET-betaAG-TOCA a promising candidate radioligand for st
139 oroethyl triazole [Tyr(3)] octreotate ((18)F-FET-betaAG-TOCA) in patients with neuroendocrine tumors
141 de II, 5 WHO grade III) with primarily (18)F-FET-negative glioma and available (18)F-FET PET follow-u
143 evaluation is useful even in primarily (18)F-FET-negative glioma, providing a high detection rate of
145 (18)F-FET PET monitoring of primarily (18)F-FET-negative gliomas concerning the detection of progres
147 ly a third of metastases < 1.0 cm were (18)F-FET-negative, most likely because of scanner resolution
148 ly a third of metastases < 1.0 cm were (18)F-FET-negative, most likely because of scanner resolution
149 TBRmax >/= 1.6 and were classified as (18)F-FET-positive (median TBRmax, 2.53 [range, 1.64-9.47]; TB
154 ng properties similar to those of (S)-[(18)F]FET in the DBT tumor model while (S)-[(18)F]14 afforded
155 o be increased 1.4- to 1.7-fold, with [(18)F]FET showing the biggest volume as depicted by a threshol
158 O-(2-[(18)F]fluoroethyl)-l-tyrosine ([(18)F]FET), in the delayed brain tumor (DBT) mouse model of hi
161 ized rapid binding of bacterial cells to a G-FET by electrical field guiding to the device to realize
162 dielectrophoresis for the first time in a G-FET, allowing us to monitor changes in the Dirac point d
163 use of graphene field effect transistors (G-FET) including the first use of peptide probes to electr
165 equency graphene field-effect transistors (G-FETs) were demonstrated, with extrinsic cutoff frequency
172 ue, we fabricated protein-decorated graphene FETs and measured their electrical properties, specifica
173 view we focus on silicon-based immunological FET (ImmunoFET) for specific and label-free sensing of p
174 bility of conducting electrical impedimetric FET measurements with a portable unit for the ultrasensi
175 metric measurements, electrical impedimetric FET measurements yielded significant improvements in bio
178 sified applications of electric double layer FETs (EDL-FETs), a triboiontronic transistor is proposed
180 tron donors in both monolayer MoS2 and MoSe2 FET devices ceases after moderate exposure, with final v
186 um-capacitance is the limiting factor for NC-FETs to achieve hysteresis-free subthermionic SS, and FE
188 different stages of AD by utilizing Si TL NW FET structures fabricated on the basis of cost-efficient
189 a observed in the novel Si two-layer (TL) NW FET structures with advanced characteristic parameters c
191 The PSA concentrations determined by the NW FETs in serum were compared with well-established ELISA
194 ials, have helped improve the sensitivity of FET biosensors and enabled detection down to single mole
195 s for improving the field-effect mobility of FETs compared to needle-like 1D structures, because of t
197 trates the potential advantages of SGTs over FETs as driver transistor for AMOLEDs display circuits w
200 ound biomolecules to readout of liquid-phase FETs fabricated with graphene or other two-dimensional m
202 degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve devic
204 wer value than that of a previously reported FET DNA biosensor whose sensing materials were in direct
207 ng a remote-gate field-effect transistor (RG FET) detection system that was able to measure the elect
208 he presence of urea, the urease-modified rGO FETs showed a shift in the Dirac point due to the change
213 l integrates the "conventional" model for SB-FETs with the phenomenon of contact gating - an effect t
214 observed; namely, the conductivity of a SCNT-FET was much higher (two orders of magnitude) than that
215 ow as 10 aM] was obtained using such an SCNT-FET, which showed a lower value than that of a previousl
216 SCNT)-based field effective transistor (SCNT-FET), which was fabricated by utilizing the surface tens
219 icon nanowire field effect transistors (SiNW FETs) typically display exquisite sensitivities, but the
220 n alternative operation principle where SiNW FETs are operated in a frequency-domain electrical imped
222 nanowire-based field-effect transistor (SiNW-FET) biosensor, with a detection limit in the picomolar
225 e apply an optogenetic approach to show that FET-family transcriptional regulators exhibit a strong t
228 5 has a unique charge distribution among the FET family members that enhances its interactions with t
229 arge transport layer in the FET channel, the FET properties are tailored by controlling doping concen
233 n films as the charge transport layer in the FET channel, the FET properties are tailored by controll
234 sed as the sensing/conducting channel in the FET, with an Al2O3 thin film as the dielectric layer for
235 lief is that the contacts can only limit the FET performance and hence the extracted mobility is an u
238 icient triboelectric potential gating on the FET and explore diversified applications of electric dou
239 stic analysis supports the argument that the FET assay is a suitable alternative testing strategy for
243 nce metrics are measured and compared as the FETs evolve from back-gated, to top-gated and finally, t
245 t governs the performance of atomically thin FETs and is applicable to the entire class of atomically
247 1 V) and hysteresis (0.9 V) when compared to FETs with the Al layer (V(Dirac) = - 6.1 V and hysteresi
250 back of charge screening seen in traditional FET based biosensors, allowing detection of target prote
251 of high-performance field-effect transistor (FET) arrays in wafer-scale is demonstrated, and the FETs
252 amer-functionalized field-effect transistor (FET) as a label-free sensor for AIV detection in chicken
253 ork, we developed a field effect transistor (FET) biosensor utilizing solution-processed graphene oxi
254 sphorous (BP)-based field-effect transistor (FET) biosensor was fabricated by using few-layer BP nano
256 bricate a backgated Field Effect Transistor (FET) device for the first time using this precursor to d
257 he monolayer MoS(2) field effect transistor (FET) exhibits photo-induced short-term and long-term pot
258 ys an extended-gate field-effect transistor (FET) for direct potentiometric serological diagnosis.
259 probe on a graphene field effect transistor (FET) for high-specificity, single-nucleotide mismatch de
263 Nanomaterial-based field-effect transistor (FET) sensors are capable of label-free real-time chemica
264 s review, different field-effect transistor (FET) structures and detection principles are discussed,
265 d to a bilayer MoS2 field effect transistor (FET) through deposition of a silicon nitride stress line
266 ipolar dual-channel field-effect transistor (FET) with a WSe2 /MoS2 heterostructure formed by separat
267 S)-based biosensor, field-effect transistor (FET)-based biosensor, surface plasmon resonance (SPR)-ba
270 e vision of silicon field-effect transistor (FET)-based sensors has been an attractive venue for addr
272 otubes (SWNTs) in a field-effect transistor (FET)/chemiresistor architecture with selective antibodie
274 ities by utilizing field-effect transistors (FET) based on two phases of titanyl phthalocyanine (TiOP
275 e of extended gate field-effect transistors (FET) for the label-free and sensitive detection of prost
277 emonstrate through field-effect transistors (FET) measurements that amorphous red phosphorus (a-RP) f
278 nd should apply to field effect transistors (FET) with high-kappa dielectric gates, van der Waals het
280 f silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same
281 h-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compe
282 mically thin MoTe2 field-effect transistors (FETs) are measured during cycles of pulses through the g
283 conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible ele
285 (Si) nanowire (NW) field-effect transistors (FETs) covered with a thin SiO(2) dielectric layer have b
286 insofar WSe2-based field-effect transistors (FETs) display the largest Hall mobilities among the tran
287 solution-processed field-effect transistors (FETs) for next-generation, low-cost, flexible electronic
288 g fabricated Si NW field-effect transistors (FETs) in combination with fluorescent marker techniques
289 electrolyte-gated field-effect transistors (FETs) induce an extremely large local electric field tha
290 telluride (MoTe2 ) field-effect transistors (FETs) is described, through rapid thermal annealing (RTA
293 d black phosphorus field effect transistors (FETs), as a class of analog and probabilistic computatio
294 c devices, such as field effect transistors (FETs), from these materials require patterning and fabri
297 l alignment allows creation of p- and n-type FETs on the same intrinsic MoS(2) flake using Pd and low
299 pta-MIP sensor developed in conjunction with FET devices demonstrates the potential for clinical appl
300 ective aptamer-lined pockets (apta-MIP) with FETs for sensitive detection of prostate specific antige