ライフサイエンスコーパス: Sn

1 Sn(II)-based halide perovskite semiconductor materials a

2 Sn-based materials are identified as promising catalysts

3 Sn-based perovskites are thus the far most promising alt

4 (119)Sn NMR chemical shifts are a sensitive probe of the hali

5 we identify the challenges and devise a (119)Sn solid-state NMR protocol for the determination of the

6 were characterized by NMR ((1)H, (13)C, (119)Sn, or (207)Pb), electronic, and IR spectroscopy and by

7 A variety of spectroscopic methods ((119)Sn-NMR, magnetic circular dichroism (MCD), electron para

8 ish that the longitudinal relaxation of (119)Sn can span 6 orders of magnitude in this class of compo

9 mulated [NaO4 (BuSn)12 (OH)3 (O)9 (OCH3 )12 (Sn(H2 O)2 )] (beta-NaSn13 ).

10 ity)Si, [(CH(3))(2)Ge](infinity), [(CH(3))(2)Sn](infinity), and [(CH(3))(2)Pb](infinity) is offered i

11 simulated and experimental spectra for Y(2)(Sn,Ti)(2)O(7) pyrochlore ceramics, where the overlap of

12 mmonium cation acting as spacer; M = Ge(2+), Sn(2+), Pb(2+); and X = Cl(-), Br(-), I(-)] have recentl

13 is the divalent metal ion(s) (e.g., Pb(2+), Sn(2+)), and X is the halide group (e.g., Cl(-), Br(-),

14 4+), Pb(2+), Cr(3+), Cd(2+), Cu(2+), Zn(2+), Sn(2+), In(3+), Ge(4+), and Fe(3+).

15 magnetic kagome-lattice Weyl-semimetal Co(3) Sn(2) S(2) .

16 Herein, a Cu-Sn (e.g., Cu(3) Sn) intermetallic coating layer (ICL) is rationally desi

17 Sr(3) Sn(2) O(7) :Nd(3+) (SSN) with polar A2(1) am structure i

18 entrosymmetric and ferroelectric-phase Sr(3) Sn(2) O(7) doped with rare earth Nd(3+) ions.

19 The installed Bu(3)Sn groups serve as chemical handles for further function

20 Photophysical studies reveal that the Bu(3)Sn-substituted PAHs are moderately fluorescent, and thei

21 structure of the ferromagnetic crystal Co(3)Sn(2)S(2) and discovered its characteristic surface Ferm

22 These results establish Co(3)Sn(2)S(2) as a magnetic Weyl semimetal that may serve as

23 The kagome lattice Co(3)Sn(2)S(2) exhibits the quintessential topological phenom

24 inations of the ferromagnetic semimetal Co(3)Sn(2)S(2), we verify spectroscopically its classificatio

25 ns and emerges near the Fermi energy in Co(3)Sn(2)S(2).

26 lomb-interaction strength (U ~ 4 eV) in Co(3)Sn(2)S(2).

27 netic correlations in the kagome magnet Co(3)Sn(2)S(2).

28 uantum impurity in a topological magnet Co(3)Sn(2)S(2).

29 of electronic correlations in a magnet Co(3)Sn(2)S(2).

30 nucleated around single S-vacancies in Co(3)Sn(2)S(2.) The SOPs carry a magnetic moment and a large

31 hat the ferromagnetic Dirac fermions in Fe(3)Sn(2) are subject to intrinsic spin-orbit coupling in th

32 the ferromagnetic kagome lattice metal Fe(3)Sn(2).

33 the THz anomalous Hall conductivity in Mn(3)Sn thin films is investigated by polarization-resolved s

34 dominance of this magnetic mechanism in Mn(3)Sn to the momentum-dependent spin splitting that is prod

35 Little is established in the case of Mn(3)Sn, a triangular antiferromagnet with a large room-tempe

36 cently the noncollinear antiferromagnet Mn(3)Sn, a Weyl semimetal candidate, was reported to show lar

37 the antiferromagnetic spintronics using Mn(3)Sn, and will also open new avenue for studying nonequili

38 n the non-collinear antiferromagnet(10) Mn(3)Sn, the SHE has an anomalous sign change when its triang

39 resentatives of this class of materials-Mn(3)Sn.

40 Nb(3)Sn conductors and that for the LTS Nb(3)Sn conductor, the emergent behaviour is not consistent w

41 an emergent property in both REBCO and Nb(3)Sn conductors and that for the LTS Nb(3)Sn conductor, th

42 table training performance of Nb-Ti and Nb(3)Sn magnets, these Bi-2212 magnets showed no training que

43 eat-treatment (HT) temperature theta in Nb(3)Sn superconducting wires made by the restacked-rod proce

44 low temperature superconductor (LTS), a Nb(3)Sn wire, that include the very widely observed inverted

45 Also different from Nb-Ti, Nb(3)Sn, and REBCO magnets for which localized thermal runawa

46 tronger than is possible with Nb-Ti and Nb(3)Sn, but two challenges have so far been the low engineer

47 pecific activity by 60- and 30%-ordered Pt(3)Sn nanocubes compared to 95%-ordered.

48 We modify the degree of ordering of Pt(3)Sn nanocubes, while maintaining the shape and size, to e

49 xidation catalyst and a conductive In(2)O(3):Sn (ITO) oxide were extracted from kinetic data by appli

50 Conductive indium-tin-oxide (ITO, In(2)O(3):Sn) mesoporous films were functionalized with 4-[N,N-di(

51 Inorganic halide perovskite CsPb(0.5) Sn(0.5) I(3) is chosen as the photoactive layer with com

52 2D DJ 3AMP-based and 3D MA(0.5)FA(0.5)Pb(0.5)Sn(0.5)I(3) (MA = methylammonium, FA = formamidinium) pe

53 lammonium lead iodide, MAPbI(3), to MAPb(0.5)Sn(0.5)I(3)).

54 iammonium ( en) dication, { en}FA(0.5)MA(0.5)Sn(0.5)Pb(0.5)I(3) (FA = formamidinium, MA = methylammon

55 refore, solar cells using { en}FA(0.5)MA(0.5)Sn(0.5)Pb(0.5)I(3) light absorbers have substantially en

56 ayer, we found that the {5% en}FA(0.5)MA(0.5)Sn(0.5)Pb(0.5)I(3) material gives an optimized PCE of 17

57 The { en}FA(0.5)MA(0.5)Sn(0.5)Pb(0.5)I(3) structure has massive Pb/Sn vacancies

58 his superstructure transforms into a (Pb(0.5)Sn(0.5)Se)(1+delta)(TiSe(2)) (m) alloyed structure.

59 hways for the formation of a layered (Pb(0.5)Sn(0.5)Se)(1+delta)(TiSe(2)) (m) heterostructure, where

60 significant Gamma-character even at low (6%) Sn concentrations.

61 an inorganic low-bandgap (1.38 eV) CsPb(0.6)Sn(0.4)I(3) perovskite stabilized via interface function

62 f topological quantum phenomena in the RMn(6)Sn(6) (where R is a rare earth element) family with a va

63 ion of a quantum-limit Chern phase in TbMn(6)Sn(6), and may enable the observation of topological qua

64 tify a new topological kagome magnet, TbMn(6)Sn(6), that is close to satisfying these criteria.

65 ic metal halide hybrid, (HMTA)(4) PbMn(0.69) Sn(0.31) Br(8) , in which the organic cation N-benzylhex

66 scence enhancement in low Sn content Ge(0.94)Sn(0.06) layers by implementing tensile strain.

67 ), resulting in the efficient formation of a Sn+1 particle.

68 Switching to a Sn-based catalyst, for the first time O(2) -tolerant CO(

69 dem devices or near infrared (NIR)-absorbing Sn-containing perovskites.

70 talytic sites such as framework Lewis acidic Sn atoms in closed and hydrolyzed-open forms, as well as

71 he effects of sulfur dioxide (SO(2)) on Ag-, Sn-, and Cu-catalyzed CO(2) electrolysis in a flow-cell

72 The metastable alloy Sn(x)V(1-x)Se(2) was preferentially formed over [(SnSe(2

73 iroptical activity are modulated by alloying Sn with Pb, in the series of (MBA)(2)Pb(1-x)Sn(x)I(4).

74 r nanocrystals show stability with the alpha-Sn diamond cubic structure.

75 Ca(2+), Cd(2+), Zn(2+), Ni(2+), Co(2+), and Sn(2+) are also studied, and the resulting sizes of the

76 In the cases of Ag and Sn, the effect of SO(2) impurity was reversible and the

77 r CO and HCOO(-) over polycrystalline Ag and Sn.

78 , Ca, Mn, Fe, Cu, Zn, Br, Rb, Sr, Pb, As and Sn.

79 We demonstrate that some metals (Fe, Co, and Sn) inhibit the sintering of the active Pd metal phase,

80 t dataset from the paired Cu-Au (copper) and Sn-W (tin) magmatic belts in Myanmar.

81 Using Sn-3.0Ag-0.5Cu/Cu and Sn-0.7Cu/Cu as examples, we show that the interfacial Cu

82 g and Ta and approximately 5% of Al, Cu, and Sn.

83 tion and storage time, especially for Fe and Sn.

84 d photobehavior of XH2OO (X = C, Si, Ge, and Sn) that serve as precursors for dioxiranes, an importan

85 ne and stanene (2D allotropes of Si, Ge, and Sn), lends itself as a platform to probe Dirac-like phys

86 such as: Cd, Pb, As, Cu, Cr, Ni, Fe, Mn and Sn in different canned samples (cardoon, tuna, green and

87 eactions containing elemental Mg, Al, Mn and Sn particles.

88 into an artificial superlattice with Pb and Sn in independent layers, creating a repeating unit with

89 relation density distribution, showed Pb and Sn segregation in the soap-affected areas.

90 essfully applied for determination of Sb and Sn in beverages.

91 The LOD and LOQ of Sb and Sn ranged from 1.2to 2.5ngL(-1) and 4.0 to 8.3ngL(-1), r

92 The concentration of Sb and Sn were quantified using ICP-OES.

93 rom 2.1% to 2.5% and 3.9% to 4.7% for Sb and Sn, respectively.

94 anic solvents for preconcentration of Sb and Sn.

95 roups, including C-, Hal-, Si-, S-, Se-, and Sn-substituents.

96 ue "push-pull" phosphastannene ((Mes)Ter)(Ar)Sn = P(IDipp) (Ar = C(6)F(4)[B(F)(C(6)F(5))(2)]).

97 the first cationic phosphonio-stannylene [Ar*Sn(PtBu3 )](+) .

98 bonding, rendering the respective Sn atom as Sn(II), hence driving the clusters into a mixed-valence

99 or silicate corrosion inhibitor (0.5 mg/L as Sn and 20 mg/L as SiO(2)).

100 Direct imaging confirms that the beta-Sn nucleates at/near the Cu6Sn5 layer in Sn-3.0Ag-0.5Cu/

101 Larger nanocrystals adopt the beta-Sn tetragonal structure, while smaller nanocrystals show

102 preparation of various constructions between Sn(1-) (x) Pb(x) Te and Pb make the heterostructures to

103 re a model system of catalytically active Bi-Sn nano-alloys produced using a liquid-phase ultrasonica

104 o the smallest grain dimensions among all Bi-Sn ratios along with more pronounced dislocation formati

105 The Bi-Sn ratio determines the grain boundary properties and th

106 o extract the bound Pb(VI) but not the bound Sn(IV).

107 nergy phonon modes in comparison to the bulk Sn PDOS.

108 n arising from the substitution of Sb(3+) by Sn(2+) triggers the partial oxidation of Sb(3+) to Sb(5+

109 We found that the substitution of Sb by Sn FeSb(2- x)Sn (x)Se(4) increases the ordering of metal

110 influence of the properly aligned C-O and C-Sn bonds.

111 cally reduced SnO2 porous nanowire catalyst (Sn-pNWs) with a high density of grain boundaries (GBs) e

112 Cr, Mn, Co, Ni, Cu, Zn, As, Se, Sr, Mo, Cd, Sn, Sb, Ba, Hg, Pb, Bi, Th, and U) in green coffee sampl

113 a, K, V, Ni, Co, Cu, Zn, Ga, As, Se, Mo, Cd, Sn, Sb, Ba, W, and Pb), including air toxics were enrich

114 thylene to give Ar((i)Pr4)(CH2CH3)2Sn(CH2CH2)Sn(CH2CH3)(CHCH2)Ar((i)Pr4) (4) featuring five ethylene

115 Cooperative Sn-H bond activation of hydrostannanes (Bu(3)SnH) by tun

116 Low coordination Sn-N moieties are the active sites with optimal electron

117 In contrast, the less crowded Sn(II) hydride [Ar((i)Pr4)Sn(mu-H)]2 (Ar((i)Pr4) = C6H3-

118 diffraction studies were conducted in the Cs/Sn/P/Se system.

119 Powder mixtures of Cs2Se2, Sn, and PSe2 were heated to 650 degrees C and then coole

120 l correlations among the major elements (Cu, Sn, and Pb) in these alloys.

121 Herein, a Cu-Sn (e.g., Cu(3) Sn) intermetallic coating layer (ICL) is

122 In addition, the residual rigid Cu-Sn intermetallic shows terrific mechanical integrity tha

123 tial element composition of three ternary Cu-Sn-Pb model bronze alloys (lead bronzes: CuSn10Pb10, CuS

124 The low activity of the Cu-Sn ICL against lithiation/delithiation enables the gradu

125 As a result, the Sn anode enhanced by the Cu-Sn ICL shows a significant improvement in cycling stabil

126 aration of the metallic Cu phase from the Cu-Sn ICL, which provides a regulatable and appropriate dis

127 l (1D) hybrid lead-free halide material (DAO)Sn(2)I(6) (DAO, 1,8-octyldiammonium) that is resistant t

128 ughened surface containing stable Sn(delta+)/Sn species that were found to be key in the enhanced act

129 an extensive series of polysulfide dianions [Sn]2- (n = 2-9) and related radical monoanions [Sn] -.

130 catalysts were obtained by electrodepositing Sn on O(2)-plasma-pretreated Ag surfaces.

131 Zero-dimensional halides of ns(2) elements (Sn, Pb, Sb) have recently gained attention as highly eff

132 l substitute to the ubiquitous and expensive Sn doped In(2)O(3) as a transparent electrode in optoele

133 served to form on warming in the experiment: Sn, Cs2Se3, Cs4Se16, Cs2Se5, Cs2Sn2Se6, Cs4P2Se9, and Cs

134 is the first room-temperature ferroelectric Sn insulator with switchable electric polarization.

135 Such fine Sn precipitates and their ample contact with Li2 O proli

136 2)=0.9987) for Sb and LOQ-350microgL(-1) for Sn.

137 Substituting Ge for Sn weakens the {Ge,Sn}-S bonding interactions and increa

138 current challenges and a future outlook for Sn-based perovskites are discussed.

139 green, and economical recycling strategy for Sn with economic value added that is held by the co-prod

140 drophobic Beta zeolites containing framework Sn atoms catalyze the transfer hydrogenation reaction of

141 o further boost the performance of lead-free Sn-based perovskites.

142 h homovalent and heterovalent cations (e.g., Sn(2+), Zn(2+), Bi(3+)) at room temperature.

143 tive low-melting temperature metals (In, Ga, Sn, Pb), produce stable molten metal alloy catalysts for

144 ne-phosphinidenes (Mes)TerEP(IDipp) (E = Ge, Sn; (Mes)Ter = 2,6-Mes(2)C(6)H(3), IDipp = C([N-(2,6-iPr

145 lic two-coordinate dioxysilylene and its Ge, Sn, and Pb congeners, thereby presenting the first compl

146 3)-2,6-(C(6)H(2)-2,4,6-Pr(i)(3))(2); M = Ge, Sn, or Pb) under mild conditions (<=80 degrees C, 1 bar)

147 l (2D) crystals termed 2D-Xenes (X = Si, Ge, Sn and so on) which, together with their ligand-function

148 character once the reagent R3MH (M = Si, Ge, Sn) enters the ligand sphere.

149 lutions Li(6+x)M(x)Sb(1-x)S(5)I (M = Si, Ge, Sn), that exhibit superionic conductivity.

150 e periodic table, including Group 14 Si, Ge, Sn, and Pb.

151 functionalized E=E multiple bonds (E=Si, Ge, Sn, Pb) because of their potential to exhibit novel phys

152 l analogues XM(YCH(2)CH(2))(3)N (M = Si, Ge, Sn, Pb, Ti, Al, Cr, Fe, Ni...; Y = O, NR, CH(2), S), i.e

153 materials (WHM with W = Zr, Hf; H = Si, Ge, Sn; M = O, S, Se, Te) with identical band topology.

154 Substituting Ge for Sn weakens the {Ge,Sn}-S bonding interactions and increases the charge dens

155 es for Cu(2)ZnSn(S,Se)(4) (CZTS), Cu(2)Zn(Ge,Sn)(S,Se)(4) (CZGTS), CuIn(S,Se)(2) (CIS), and Cu(In,Ga)

156 group IV colour centres-namely the Si-, Ge-, Sn- and Pb-vacancies.

157 ggered" stannyl-ligated counterpart [Ge18Pd3{Sn(i)Pr3}6](2-) (2), showing the possibility to find suc

158 to the host framework geometry due to Ge -> Sn substitution.

159 Interestingly, the SOn + nH2S --> Sn+1 + nH2O reactions occur via low-energy pathways unde

160 roliferate the reversible Sn --> Li x Sn --> Sn --> SnO2 /SnO2-x cycle during charging/discharging.

161 wn that C-H, N-H, B-H, O-H, S-H, Si-H, Ge-H, Sn-H and P-H insertion reactions are feasible with a var

162 observed that the Ni interstitial and Ti,Hf/Sn antisite defects are collectively formed, leading to

163 ong-term stability over 300 cycles, and high Sn-->SnO2 reversibility.

164 However, Sn suffers from severe mechanical degradation caused by

165 ike 2-butanol solvent present in hydrophilic Sn-Beta, giving rise to higher turnover rates on hydroph

166 nding solvent network present in hydrophobic Sn-Beta stabilizes the transfer hydrogenation transition

167 cement stems from the ability of hydrophobic Sn-Beta to inhibit the formation of extended liquid-like

168 rise to higher turnover rates on hydrophobic Sn-Beta.

169 ally, reactant adsorption within hydrophobic Sn-Beta is driven by the breakup of intraporous solvent-

170 rt isostructural halide complexes of Ge(II), Sn(II), and Pb(II) with a 1-butyl-1-methyl-piperidinium

171 ynthesized, including K(i), Al(iii), Zn(ii), Sn(ii), Ge(ii), and Si(ii/iv).

172 LD procedure, assemblies bridged by Al(III), Sn(IV), Ti(IV), or Zr(IV) metal oxide units have been pr

173 After years of effort invested in Sn-based halide perovskites, sufficient breakthroughs ha

174 eta-Sn nucleates at/near the Cu6Sn5 layer in Sn-3.0Ag-0.5Cu/Cu joints.

175 Recent progress in Sn-based perovskite solar cells, focusing mainly on film

176 Rapidly quenched ternary Ni-Mn-T (T = In, Sn) alloys exhibit features associated with magnetic sky

177 Eutectic Ga-In (EGaIn) and Ga-In-Sn (Galinstan) alloys are typically used due to their hi

178 and saturation magnetization upon increasing Sn content.

179 arly polarized absorption from the inorganic Sn-I sublattice, displaying chiroptical activity in the

180 ing the clusters into a mixed-valence Sn(IV)/Sn(II) situation, and the M atoms as M(IV) upon an in si

181 k of high-efficiency, low-band gap tin-lead (Sn-Pb) mixed-perovskite solar cells (PSCs).

182 strong photoluminescence enhancement in low Sn content Ge(0.94)Sn(0.06) layers by implementing tensi

183 We show that low Sn content GeSn alloys have a strong potential to enable

184 k.p model, show the advantages of using low Sn content tensile strained GeSn layers in respect to ga

185 the formula (xAMPY)M(2)I(6) (x = 3 or 4, M = Sn(2+) or Pb(2+)) which is double of the AMX(3) formula.

186 -MoCp(CO)(3) (Ar = Ar(iPr4) or Ar(iPr6); M = Sn or Pb).

187 ons, resulting in doped CsPb1-xMxBr3 NCs (M= Sn(2+), Cd(2+), and Zn(2+); 0 < x </= 0.1), with preserv

188 Finally, a brief overview of mixed Sn/Pb-based systems with their anomalous yet beneficial

189 50 nm in Ni-Mn-In and a = 0.9051 nm in Ni-Mn-Sn, which coexist with a Ni-rich full-Heusler compound w

190 94 nm in Ni-Mn-In and a = 0.6034 nm in Ni-Mn-Sn.

191 m and other interfering elements such as Mo, Sn, Sb, and Li were efficiently removed using cation exc

192 2- (n = 2-9) and related radical monoanions [Sn] -.

193 h sulfur gives mixtures of [Bi(NON(R))]2(mu2-Sn) (NON(R) = [O(SiMe2NR)2](2-)).

194 agnets, made of reduced-Sn wires having a Nb/Sn ratio of 3.6 and 108/127 restacking architecture, be

195 A new Sn-flux synthesis permits the rapid single-phase synthes

196 high heavy metal contents (e.g., Cr, Zn, Ni, Sn, etc.) and the capacity to remove dissolved sulfide i

197 of the SnO6 octehedra, under which the Sn-O1-Sn exchange angle theta is decreased below 22.1 GPa, thu

198 equilibrium phase in a hole-doped bilayer of Sn on Si(111).

199 rconducting transition temperature (T(C)) of Sn nanostructures in comparison to bulk, was studied.

200 In the case of Sn(II) and Ge(II), both singlet and triplet excitonic em

201 istribution of Cu to buffer volume change of Sn anode.

202 nearly doubles the natural concentration of Sn vacancies.

203 Critical contents of Sn in granitic magmas, which may be required for the dev

204 he alloy and not the associated diffusion of Sn and Pb through the TiSe(2) layers.

205 rolled nanostructures and a high fraction of Sn/Li2 O interface are critical to enhance the coulombic

206 g successful for the former, the increase of Sn content is detrimental, leading to increased defect c

207 to the alkynes and imply the involvement of Sn-H bond activation in the rate-determining step.

208 p the reader better understand the nature of Sn-based halide perovskites, their optical and electrica

209 at the improved CO2 reduction performance of Sn-pNWs is due to the density of GBs within the porous s

210 structural and optoelectronic properties of Sn-Pb mixed, low-band gap (~1.25 electron volt) perovski

211 he superconducting transition temperature of Sn nanostructures.

212 o red spectral regions for bromides (for Pb, Sn, and Ge, respectively) and extends into the near-infr

213 The work demonstrates that mixed Pb-Sn perovskites are promising next generation NIR emitter

214 The emission spectra of mixed Pb-Sn perovskites are tuned either by changing the Pb:Sn ra

215 ssion from 850 to 950 nm, using lead-tin (Pb-Sn) halide perovskite as emitters are demonstrated.

216 )Sn(0.5)Pb(0.5)I(3) structure has massive Pb/Sn vacancies and much higher chemical stability than the

217 ght the strong promise of 3D hollow mixed Pb/Sn perovskites in achieving ideal band gap materials wit

218 Here, we demonstrate that mixed Pb/Sn-based perovskites containing the oversized ethylenedi

219 ganic spacer for the fabrication of mixed Pb/Sn-based perovskites, exhibiting a narrow bandgap of 1.2

220 and increases the carrier lifetime of the Pb/Sn-based perovskite films.

221 ovskites are tuned either by changing the Pb:Sn ratio or by incorporating bromide, and notably exhibi

222 )Pr4) isomers of 2a and 3a, i.e., [Ar((i)Pr4)Sn(C2H5)]2 (2b) and Ar((i)Pr4)SnSn(C2H5)2Ar((i)Pr4) (3b)

223 (3b) are obtained by reaction of [Ar((i)Pr4)Sn(mu-Cl)]2 with EtLi or EtMgBr.

224 , the less crowded Sn(II) hydride [Ar((i)Pr4)Sn(mu-H)]2 (Ar((i)Pr4) = C6H3-2,6(C6H3-2,6-(i)Pr2)2) (1b

225 The tin(II) hydride [Ar((i)Pr6)Sn(mu-H)]2(Ar((i)Pr6) = C6H3-2,6(C6H2-2,4,6-(i)Pr3)2) (1

226 s Sn2RHAr2 which has the structure Ar((i)Pr6)Sn-Sn(H)(CH2CH2(t)Bu)Ar((i)Pr6) (6a) or the monohydrido

227 Furthermore, Pt-Sn iNPs are shown to be a robust catalytic platform for

228 activation phase where it transforms into Pt-Sn clusters under reaction conditions.

229 ically dispersed species on CeO2 , making Pt-Sn/CeO2 a fully regenerable catalyst.

230 Formation of small Pt-Sn clusters allows the catalyst to achieve high selectiv

231 The CeO2 -supported Pt-Sn clusters are very stable, even during extended reacti

232 Furthermore, upon oxidation the Pt-Sn clusters readily revert to the atomically dispersed s

233 ydrogen-induced polarization NMR on these Pt-Sn catalysts.

234 r the synthesis of size-monodisperse Pt, Pt3 Sn, and PtSn intermetallic nanoparticles (iNPs) that are

235 y reduces SnO2, producing 99.34% high-purity Sn and H2 and CO.

236 specific for Pseudomonas aeruginosa (pyocin Sn) was produced and shown to kill P. aeruginosa thereby

237 However, depositing high-quality Sn-based perovskite films is still a challenge, particul

238 ) , M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heter

239 On the other hand, reduced-Sn billets offer a significantly wider choice of theta,

240 ests that HT of LHC magnets, made of reduced-Sn wires having a Nb/Sn ratio of 3.6 and 108/127 restack

241 s directing groups (TDGs) for regioselective Sn-radical attack at the triple bonds.

242 ions and stabilizes fine, fracture-resistant Sn precipitates in the Li2 O matrix.

243 ulticenter bonding, rendering the respective Sn atom as Sn(II), hence driving the clusters into a mix

244 ontact with Li2 O proliferate the reversible Sn --> Li x Sn --> Sn --> SnO2 /SnO2-x cycle during char

245 d in relation to fetal growth (i.e., Mo, Sb, Sn).

246 Al, As, Ba Cd, Co, Ni, P, Pb, Sb, Sn and Sr showed values below the LOD.

247 Cu, Fe, Mn, Cd, Cr, Hg, Mo, Ni, Pb, Se, Sb, Sn, and Zn) in three different pulse species: Vigna ungu

248 , Cu, Fe, K, Mg, Mn, Mo, Na, Ni, Pb, Sb, Se, Sn, Sr, V, Tl and Zn, presenting the differences and mig

249 he homogeneous distribution of the separated Sn together with Cu promotes uniform lithiation/delithia

250 They consist of densely packed LixM (M = Si, Sn, or Al) nanoparticles encapsulated by large graphene

251 panations, C-H and X-H (X = N, O, S, Se, Si, Sn, Ge) functionalizations.

252 mpared to other CoMnGe alloys doped with Si, Sn, Ti, and Ga.

253 stretched into uniformly dispersed and sized Sn nanoparticles in polyethersulfone (PES) through a sta

254 Ultra-small Sn nanocrystals are achieved through our highly non-equi

255 Cs4(Sn3Se8)[Sn(P2Se6)]2 is a two-dimensional compound that behaves a

256 n(P2Se6)2, alpha-Cs2SnP2Se6, and Cs4(Sn3Se8)[Sn(P2Se6)]2.

257 er (ICL) is rationally designed to stabilize Sn through a structural reconstruction mechanism.

258 e synthesis and characterization of a stable Sn (II)-based two-dimensional perovskite featuring a pai

259 a highly roughened surface containing stable Sn(delta+)/Sn species that were found to be key in the e

260 For standard-Sn billets, this requires a strikingly narrow HT tempera

261 logical superconductivity in superconducting Sn(1-) (x) Pb(x) Te.

262 (PDOS) of the weakly coupled superconductor Sn were analyzed and correlated with the increase in T(C

263 Co[Formula: see text]Sn[Formula: see text]S[Formula: see text] is a ferromagn

264 Previous work has demonstrated that Sn, Ge, Cu, Bi, and Sb ions could be used as alternative

265 hyltin (DET) is a substrate for MerB and the Sn(IV) product remains bound in the active site in a coo

266 We report here the Sn-catalyzed mild protocol for ring expansion of peroxyo

267 rs much effort has been made to increase the Sn content in GeSn alloys in order to increase direct ba

268 The indirect band gaps of the Sn and Pb compounds are ~1.7 and 2.0 eV, respectively, w

269 The superconductivity of the Sn(1-) (x) Pb(x) Te-Pb heterostructures can be directly

270 to examine the electronic properties of the Sn(1-x)Pb(x)O ternary oxide system.

271 Reactions of the Sn(II) hydrides [ArSn(mu-H)]2 (1) (Ar = Ar(iPr4) (1a), A

272 ar, controlling the local composition of the Sn|Se layers in the precursors enables the selective syn

273 Once the Sn+1 particles are formed, they may further nucleate to

274 As a result, the Sn anode enhanced by the Cu-Sn ICL shows a significant i

275 The SnI(4) tetrahedra template the Sn atoms into a chiral cubic three-connected net of the

276 rtion of the SnO6 octehedra, under which the Sn-O1-Sn exchange angle theta is decreased below 22.1 GP

277 Tin (Sn)-based perovskites are increasingly attractive becaus

278 The metallic tin (Sn) anode is a promising candidate for next-generation l

279 sformation from alpha to beta phases of tin (Sn) nanocrystals is investigated in nanocrystals with di

280 ybdenum (Mo), lead (Pb), antimony (Sb), tin (Sn), and thallium (Tl) were measured by inductively coup

281 Here we show an unusual phenomenon that tin (Sn) microparticles with both poor size distribution and

282 On the tin (Sn) surface, we identify intra-Brillouin zone Weyl node

283 In contrast, when tin (Sn) is added to CeO2 , the single-atom Pt catalyst under

284 e evolution of the Gamma-character is due to Sn-induced conduction band mixing effects, in contrast t

285 us enhancing the PL quantum yield leading to Sn (3) P1 --> (1) S0 photons transition.

286 Special attention is paid to Sn-induced band mixing effects.

287 Using Sn-3.0Ag-0.5Cu/Cu and Sn-0.7Cu/Cu as examples, we show t

288 ce driving the clusters into a mixed-valence Sn(IV)/Sn(II) situation, and the M atoms as M(IV) upon a

289 tion of atomically flat lateral and vertical Sn(1-) (x) Pb(x) Te-Pb heterostructures by molecular bea

290 that self-doping of SnO2-x nanocrystals with Sn(2+) red-shifts their absorption to the visible region

291 Li2 O proliferate the reversible Sn --> Li x Sn --> Sn --> SnO2 /SnO2-x cycle during charging/dischar

292 crystalline insulator, (001)-oriented Pb1-x Sn x Se in zero and high magnetic fields.

293 ynthesized layered semiconductor (Ge(1-) (x) Sn(x) S) nanoribbons with an axial twist and deep subwav

294 Sn with Pb, in the series of (MBA)(2)Pb(1-x)Sn(x)I(4).

295 uperionic lithium-ion conductor Li(10)Ge(1-x)Sn(x)P(2)S(12).

296 agnetic ordering in the p-type FMS FeSb(2- x)Sn (x)Se(4) (0 <= x <= 0.20) through carrier density eng

297 ic moment and free carrier spin in FeSb(2- x)Sn (x)Se(4) FMSs, the magnitude of the Curie temperature

298 that the substitution of Sb by Sn FeSb(2- x)Sn (x)Se(4) increases the ordering of metal atoms within

299 anocrystals (PdM, M = V, Mn, Fe, Co, Ni, Zn, Sn, and potentially extendable to other metal combinatio

300 ion released toxic metals containing Pb, Zn, Sn, and Sb.