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1 ing order and can be either ferromagnetic or antiferromagnetic.
2 entropy-stabilized oxides considered here is antiferromagnetic.
3 ns between nearest-neighbor Mn(2+) atoms are antiferromagnetic.
6 es of the system, it is known to enhance the antiferromagnetic (AF) ordering temperature T(N) ( < T(s
7 rgoes a magnetostructural transition from an antiferromagnetic (AF) to a ferromagnetic (FM) phase bet
8 interest due its highly unusual first-order antiferromagnetic (AF) to ferromagnetic (FM) phase trans
9 the other hand, manipulation of magnetism in antiferromagnetic (AFM) based nanojunctions by purely el
11 i-layer of a heavy metal (Pt) and a bi-axial antiferromagnetic (AFM) dielectric (NiO) can be a source
12 tributed to competing ferromagnetic (FM) and antiferromagnetic (AFM) exchange interactions for Eu- an
13 her is from a ferromagnetic (FM) metal to an antiferromagnetic (AFM) insulator at [Formula: see text]
14 rt the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IE
15 because neutron scattering suggests that the antiferromagnetic (AFM) long-range order, which is belie
17 ion system: Pressure suppresses local-moment antiferromagnetic (AFM) order and induces superconductiv
20 nostructures, an opportunity of manipulating antiferromagnetic (AFM) states should offer another rout
21 e show that it is ferromagnetic in plane but antiferromagnetic along the c axis with an out-of-plane
24 e magnets, the coexistence of third-neighbor antiferromagnetic and nearest-neighbor ferromagnetic exc
25 d tricritical point separating paramagnetic, antiferromagnetic, and metamagnetic phases in the compou
26 to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) wi
27 the observed magnetic phase transition, from antiferromagnetic at 5 unit cells (ucs) of LMO or below
28 accompanied by corresponding rotation of the antiferromagnetic axis as well, thus maintaining the rig
29 edicted to form around charged dopants in an antiferromagnetic background in the low-doping regime, c
31 of correlation effects in nonsuperconducting antiferromagnetic BaCr2As2 by means of angle-resolved ph
32 re we demonstrate experimentally that canted antiferromagnetic BaMnSb2 is a 3D Weyl semimetal with a
35 h are highly sensitive to the interaction of antiferromagnetic Bi(0.9)La(0.1)FeO(3) with ionic conduc
37 icroelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit
38 ically and form a one-dimensional Heisenberg antiferromagnetic chain along the a-axis of the crystal.
39 pentahydrate, CN), an alternating Heisenberg antiferromagnetic chain model material, is performed wit
42 resonance can transmit coherently across an antiferromagnetic CoO insulating layer to drive a cohere
43 ex pseudo-ordering gives rise to short-range antiferromagnetic correlation within an insulating state
44 creation of artificial Mott insulators where antiferromagnetic correlations between spins and orbital
46 ere, we report site-resolved observations of antiferromagnetic correlations in a two-dimensional, Hub
48 solved measurements, we revealed anisotropic antiferromagnetic correlations, a precursor to long-rang
49 e high-pressure synthesis of a new polar and antiferromagnetic corundum derivative Mn2MnWO6, which ad
50 e-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II-VI semiconduc
51 (2) and S 3p(z) orbitals results in a strong antiferromagnetic coupling (computed J = -1516.9 cm(-1))
52 ty measurements rationalize an unprecedented antiferromagnetic coupling between a magnetic U(4+) site
53 DFT calculations further support the strong antiferromagnetic coupling between Co(II) ions and bptz
54 sign of EB is related to the frustration of antiferromagnetic coupling between the ferromagnetic reg
55 ameworks, a transition from ferromagnetic to antiferromagnetic coupling between the metal binding sit
56 both compounds, the experimentally observed antiferromagnetic coupling can be quantitatively explain
58 ctional theory calculations, we describe the antiferromagnetic coupling in this system that occurs in
59 1) chain of organic radicals with intrachain antiferromagnetic coupling of J'/ k = -14 K, which is as
61 the [Formula: see text] planes could have an antiferromagnetic coupling that matches or surpasses the
65 in pumping in heterostructures of a uniaxial antiferromagnetic Cr(2)O(3) crystal and a heavy metal (P
66 ronic state transition in highly crystalline antiferromagnetic CrN films with strain and reduced dime
67 heterostructures exhibiting Neel order in an antiferromagnetic CrSb and ferromagnetic order in Cr-dop
68 l switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied cu
69 and, we observe a Mott insulating state with antiferromagnetic Curie-Weiss behaviour, as expected for
72 sensitive magnetic sensor to map out layered antiferromagnetic domain structures at zero magnetic fie
73 theories indeed predicted faster dynamics of antiferromagnetic domain walls (DWs) than ferromagnetic
78 itive to disturbing magnetic fields, and the antiferromagnetic element would not magnetically affect
79 an S=4 spin system with strong cobalt-ligand antiferromagnetic exchange and J approximately -290 cm(-
81 ulations, demonstrate the presence of strong antiferromagnetic exchange between spin centers, with a
82 lculations demonstrate that a unique form of antiferromagnetic exchange coupling appears at the inter
84 directly proportional to the strength of the antiferromagnetic exchange coupling between the two sub-
85 and superlattices, we demonstrate the use of antiferromagnetic exchange coupling in manipulating the
86 oth perpendicular to the film plane, a large antiferromagnetic exchange interaction induces a high fr
88 ation of pairwise Mn(III)2 ferromagnetic and antiferromagnetic exchange interactions, and the resulta
89 .4 K and fields up to 35 T, reveal competing antiferromagnetic exchange interactions; DFT calculation
90 ertain level compared to the other competing antiferromagnetic exchange pathways can the correspondin
92 s of Ti atoms interacting with each other in antiferromagnetic fashion to lower the total energy of t
93 rk opens pathways toward a new generation of antiferromagnetic - ferromagnetic interactions for spint
94 structures at zero magnetic field as well as antiferromagnetic/ferromagnetic domains at finite magnet
96 rmation in a bilayer system of ferromagnetic/antiferromagnetic (FM/AFM) films, in which the bulk DMI
97 erromagnetic state to Mott insulating G-type antiferromagnetic (G-AFM) state was found in Ca3(Ru(1-x)
98 ion from ferromagnetic [Gd(2)C](2+).2e(-) to antiferromagnetic Gd(2)CCl caused by attenuating interat
100 O3, the new double perovskite oxides have an antiferromagnetic ground state and around room temperatu
101 relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic
103 Kitaev interactions, while a second-neighbor antiferromagnetic Heisenberg exchange drives the ground
104 ing it to a problem of quantum magnetism, an antiferromagnetic Heisenberg model in an external magnet
108 scovery of spin current transmission through antiferromagnetic insulating materials opens up vast opp
109 = K, Rb, Cs), the presence of an intergrown antiferromagnetic insulating phase makes the study of th
111 iCo(2) O(4) from ferrimagnetic metallic into antiferromagnetic insulating with protonation at elevate
112 illerite SrCoO2.5 that is a room-temperature antiferromagnetic insulator (AFM-I) and the perovskite S
113 urrent can ever keep its coherence inside an antiferromagnetic insulator and so drive the spin preces
115 dide (CrI(3)) has been shown to be a layered antiferromagnetic insulator in its few-layer form(1), op
116 mechanism by showing that even the simplest antiferromagnetic insulator like MnO, could display a ma
117 that the interfacial coupling between the 3d antiferromagnetic insulator SrMnO3 and the 5d paramagnet
119 is a ferromagnetic metal, and SrCoO2.5 is an antiferromagnetic insulator-enable an unusual form of ma
122 ibits real space Fe and Cu ordering, and are antiferromagnetic insulators with the insulating behavio
124 though solid-state magnetometry indicates an antiferromagnetic interaction between the two iron cente
126 rate singlet-triplet ground states with weak antiferromagnetic interactions evaluated by magnetometry
127 eraction in the former (2J=14.4 cm(-1) ) and antiferromagnetic interactions in 1O at low temperatures
129 l arrangements, which interact via isotropic antiferromagnetic interactions, can generate such a frus
131 a competition between the Zeeman energy and antiferromagnetic interfacial exchange coupling energy.
132 ative and positive exchange bias, as well as antiferromagnetic interlayer coupling are observed in di
134 ults highlight an enhancement of the CrCl(3) antiferromagnetic interlayer interaction that appears to
136 gether with an excess of La can stabilize an antiferromagnetic LaMnO3-type phase at the interface reg
138 dicates that these structural defects in the antiferromagnetic layer are behind the resulting large v
141 both the hidden-order (HO) and large-moment antiferromagnetic (LMAFM) phases and established the 3D
142 both the hidden-order (HO) and large-moment antiferromagnetic (LMAFM) regions of the phase diagram.
144 ing this topic is: whether and how could THz antiferromagnetic magnons mediate a GHz spin current?
145 cooling through the Neel temperature of the antiferromagnetic material in the presence of a magnetic
146 he ability to represent information using an antiferromagnetic material is attractive for future anti
148 eraction that couples a ferromagnetic and an antiferromagnetic material, resulting in a unidirectiona
149 k on integrating topological insulators with antiferromagnetic materials and unveils new avenues towa
151 ) has a general consequence of causing these antiferromagnetic materials to become ferromagnets.
152 studies have focussed on the utilization of antiferromagnetic materials with biaxial magnetic anisot
153 arge can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit c
155 r the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-as
158 othermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator th
161 ompeting ferromagnetic (Mn(2+) -Mn(3+) ) and antiferromagnetic (Mn(2+) -Mn(2) , Mn(3+) -Mn(3+) ) inte
163 This implies that information stored in antiferromagnetic moments would be invisible to common m
165 heoretical evidence of the realization of an antiferromagnetic Mott insulating phase in 2D pai-conjug
166 a quantum phase transition (QPT) between an antiferromagnetic Mott insulating state and a paramagnet
167 cuprate high-temperature superconductors, an antiferromagnetic Mott insulating state can be destabili
168 enon at the LaMnO3/SrTiO3 interface where an antiferromagnetic Mott insulator abruptly transforms int
169 e-doping to the parent compound, which is an antiferromagnetic Mott insulator, has been predicted to
172 reversible switching of the thermally-stable antiferromagnetic Neel vector by spin-orbit torques.
173 overy of the spin-orbit-entangled exciton in antiferromagnetic NiPS(3) introduces van der Waals magne
175 single-phase multiferroics remain limited by antiferromagnetic or weak ferromagnetic alignments, by a
177 ron-based superconductivity develops near an antiferromagnetic order and out of a bad-metal normal st
178 ven by the X-ray-induced modification of the antiferromagnetic order and the corresponding exchange b
179 candidate Na(2)BaCo(PO(4))(2), which has an antiferromagnetic order at very low temperature (T(N) ~
183 particular, we demonstrate the emergence of antiferromagnetic order in a system which is initially i
184 xtremely high magnetic fields to destroy the antiferromagnetic order in gamma-lithium iridate and rev
189 l strong interfacial interaction between the antiferromagnetic order of the Cr(2) O(3) and the magnet
191 of Bi(3+) at around 135 K, and a long-range antiferromagnetic order related to the Cr(3+) spins arou
192 The data reveal the development of nuclear antiferromagnetic order slightly above 2 mK and of heavy
193 The onset temperature T CDW takes over the antiferromagnetic order temperature T N beyond a critica
194 ate is usually electronically frozen with an antiferromagnetic order that resists external control.
195 BiFeO3, as well as exchange coupling of its antiferromagnetic order to a ferromagnetic overlayer.
196 ate instead of the more traditional ferro or antiferromagnetic order to couple to electric properties
197 ic order for 304 K < T < 565 K, but a canted antiferromagnetic order with a ferromagnetic component f
198 tion functions reveals a hidden finite-range antiferromagnetic order, a direct consequence of spin-ch
199 anied by short-range, quasi-one-dimensional, antiferromagnetic order, and provides a natural explanat
200 eminiscent of a transition into a phase with antiferromagnetic order, but evidence for an associated
201 g these fields, which couple strongly to the antiferromagnetic order, we demonstrate room-temperature
202 iprocal SHG originates only from the layered antiferromagnetic order, which breaks both the spatial-i
205 c structure of ferromagnetic and spin-canted antiferromagnetic ordered materials as well as an unders
207 (ferromagnetic ordering in the ab plane and antiferromagnetic ordering along the c axis below 286 K)
210 he coexistence between superconductivity and antiferromagnetic ordering in the same CuO(2) sheet.
212 strong magnetic correlations persist at the antiferromagnetic ordering vector up to dopings of about
213 ombic) phase transition at Ts = 90 K without antiferromagnetic ordering-by neutron scattering, findin
216 ghest attainable magnetic fields.The complex antiferromagnetic orders observed in the honeycomb irida
217 gnetic scattering shows predominately c-axis antiferromagnetic orientation of the magnetic moments fo
218 cT) phase at low temperature and PII with an antiferromagnetic orthorhombic (O) phase at low temperat
220 se transition taking place at ~400 K from an antiferromagnetic phase at room temperature to a high te
224 upt transition from the ferromagnetic to the antiferromagnetic phase, while the reverse transition re
225 ilms designed so that both ferromagnetic and antiferromagnetic phases are bistable at room temperatur
229 face between a spin ice and an isostructural antiferromagnetic pyrochlore iridate and whose monopole
230 h magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferro
232 ls with unconventional superconductivity and antiferromagnetic QCPs(1-4) has led to the belief that t
234 duced state in the vicinity of a field-tuned antiferromagnetic quantum critical point at Hc approxima
235 results underline that fluctuations from the antiferromagnetic quantum criticality promote unconventi
240 ies of CrSBr are reported, an air-stable vdW antiferromagnetic semiconductor that readily cleaves per
241 se transition between stable 1D metal and an antiferromagnetic semiconductor, with the phase boundary
243 Carlo simulations, we show that a fractional antiferromagnetic skyrmion lattice is stabilized in MnSc
244 d that the skyrmion Hall effect vanishes for antiferromagnetic skyrmions because their fictitious mag
245 demonstrates that the theoretically proposed antiferromagnetic skyrmions can be stabilized in real ma
247 ayed growth of spin fluctuations and develop antiferromagnetic spatial correlations resulting from th
248 er is a consequence of the interplay between antiferromagnetic spin correlations and local magnetic a
251 ding allows us to investigate the physics of antiferromagnetic spin dynamics and highlights the impor
252 y high velocities can be attained due to the antiferromagnetic spin dynamics associated with ferrimag
254 However, experimental investigations of antiferromagnetic spin dynamics have remained unexplored
255 al motivation towards this direction is that antiferromagnetic spin dynamics is expected to be much f
259 ibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct proje
265 e demonstrates the ultrafast readout for the antiferromagnetic spintronics using Mn(3)Sn, and will al
272 lane ferromagnetic ground state, an in-plane antiferromagnetic state appears at temperatures above 90
277 rial is characterized by a 3-k non-collinear antiferromagnetic structure and multidomain Jahn-Teller
278 d, we find that Sr2MgOsO6 orders in a type I antiferromagnetic structure at the remarkably high tempe
279 mergence of a ((1/4),(1/4),(1/4))-wavevector antiferromagnetic structure in LaNiO3 and the presence o
280 magnetic state of Eu evolves from the canted antiferromagnetic structure in the ground state, via a p
282 ediate pressure, finally to an "unconfirmed" antiferromagnetic structure under the high pressure.
283 , T(N) = 132 +/- 1 K, CrSBr adopts an A-type antiferromagnetic structure with each individual layer f
285 illations corresponds to the strength of the antiferromagnetic superexchange interaction in NiO and t
286 ther demonstrate that MnBi(4)Te(7) is a Z(2) antiferromagnetic TI with two types of surface states as
287 This goal is achieved by coupling spins in antiferromagnetic TmFeO(3) (thulium orthoferrite) with t
288 a possible quantum phase transition from an antiferromagnetic to a weak ferromagnetic state at filli
289 ted to the interlayer ordering changing from antiferromagnetic to ferromagnetic at a critical magneti
290 by ~50% and that the transition from layered antiferromagnetic to ferromagnetic order tunes the spect
291 tures, electronic reconstruction leads to an antiferromagnetic to ferromagnetic transition, making th
292 xperimental techniques the realization of an antiferromagnetic topological insulator in the layered v
293 magnetic susceptibility measurements find an antiferromagnetic transition at [Formula: see text] K.
299 tionship between ferroelectric polarization, antiferromagnetic vector and the Dzyaloshinskii-Moriya v
300 exchange coupling within the [Fe8 ] core is antiferromagnetic which is attenuated upon reduction to