ライフサイエンスコーパス: bandgap

1 m exciton dark states which extend below the bandgap.

2 ance of a semiconductor is determined by its bandgap.

3 eously achieve high piezoelectricity and low bandgap.

4 as been a mainstream strategy for tuning the bandgap.

5 tier molecular orbital without impacting the bandgap.

6 alized polymers, which typically show medium bandgap.

7 ties, including a wide and complete photonic bandgap.

8 me is consistent with their relative optical bandgap.

9 ator strength by tuning the bilayer graphene bandgap.

10 nd shows a possibility of wide tunability of bandgap.

11 lammonium lead tri-iodide with a sub-optimal bandgap.

12 to be removed by phonon modes outside of the bandgap.

13 ng from excitation across the nanosurfactant bandgap.

14 ming, stable perovskite top cell with a wide bandgap.

15 ities occupying shallow energy levels in the bandgap.

16 materials consisting of heavy atoms and low bandgaps.

17 sSnI3 )x (0<x<1) compositions with anomalous bandgaps.

18 conversion efficiencies (PCE) at a range of bandgaps.

19 a large amount of iodine to realize smaller bandgaps.

20 nd create nontrivial topologically protected bandgaps.

21 infrared light absorption with a lowest ever bandgap ~0.9 eV at room temperature.

22 Previous search for low-bandgap (1.2 to 1.4 eV) halide perovskites has resulted

23 However, development of ideal bandgap (1.3-1.4 eV) absorbers is pivotal to further imp

24 Here we show the promise of an inorganic low-bandgap (1.38 eV) CsPb(0.6)Sn(0.4)I(3) perovskite stabil

25 iophene) (N2200), DCNBT-IDT shows a narrower bandgap (1.43 eV) with a much higher absorption coeffici

26 Morphology, optical bandgap (1.88 +/- 0.5 eV) and photoluminescence (PL) spe

27 material exhibited semiconducting behavior (bandgap ~1.94 electron volts), high strength (~66 gigapa

28 ly be used to make materials with a photonic bandgap(1-3).

29 ), and has been shown to influence the local bandgap(12,13) and quantum emission properties(14) of TM

30 al-neutron-capture cross-section, a suitable bandgap (2.06 electronvolts) and a favourable electronic

31 miconductors) wastes energy in excess of its bandgap(2).

32 res formed between low-bandgap 3D and higher-bandgap 2D components are demonstrated.

33 Lead Iodide (PbI(2)) is a large bandgap 2D layered material that has potential for semic

34 of signal-to-noise ratio compared with small-bandgap 2D semiconductors.

35 structural heterojunctions form between high-bandgap 2D surface crystallites and lower-bandgap 3D dom

36 bust materials prized for their size-tunable bandgap(3); however, they also require further advances

37 rovskite heterostructures formed between low-bandgap 3D and higher-bandgap 2D components are demonstr

38 gh-bandgap 2D surface crystallites and lower-bandgap 3D domains.

39 power electronics, thanks to its ultra-wide bandgap (4.5-4.8 eV) and ability to be easily doped n-ty

40 ultrahigh kappa in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising mater

41 hat are energetically matched to the silicon bandgap(6-8).

42 Our design uses two different bandgap absorption regions separated by an electron barr

43 ar subcell is generally composed of a narrow-bandgap acceptor for infrared absorption but a large-ban

44 con acoustic cavity incorporating a phononic bandgap acoustic shield.

45 ctive masses and predicting the trend of the bandgap across the entire composition range.

46 The lateral gradient of the bandgap across the monolayer heterostructure allows for

47 The relatively narrow bandgap and 2D structure of C(3)N(5) make it an interest

48 The bandgap and chiroptical activity are modulated by alloyi

49 s that appears at 2.28 eV above the pristine bandgap and displays pronounced ferromagnetic hysteresis

50 the off-state the Fermi level moves into the bandgap and electrons suffer from severe back-scattering

51 are shown to induce large variations of the bandgap and exciton binding energies up to the 100 meV r

52 ical properties such as conveniently tunable bandgap and extremely high ambipolar carrier mobility fo

53 an be ascribed to self-trapped states within bandgap and extremely low electrical conductivity in the

54 as the photoactive layer with comprehensive bandgap and film engineering.

55 small (<450 meV) energy loss compared to the bandgap and high (>100 cm(2) V(-1) s(-1) ) intrinsic car

56 sion results in decrease of their electronic bandgap and improvement in the electrical conductivity o

57 y changes the crystal structure, reduces the bandgap and increases the hole mobility of alpha-FAPbI(3

58 ures(9,10), because diamond has a much wider bandgap and is less sensitive to imperfections(11,12).

59 cture, including some electronic properties (bandgap and number of electrons), symmetry indicators, a

60 ta-Ga(2)O(3) nanowires including the optical bandgap and photoconductance.

61 sion of 2D all-inorganic CsPb(2) Br(5) , its bandgap and photoluminescence (PL) origin have generated

62 cloparaphenylenes, such as a reduced optical bandgap and red-shifted fluorescence.

63 e mobility-lifetime (mutau) product, tunable bandgap and simple single crystal growth from low-cost s

64 mproved synthetic control ultimately enables bandgap and strain engineering in colloidal nanomaterial

65 electronics applications due to their direct bandgap and strong light-matter interactions.

66 -imaging reveals the formation of a photonic bandgap and strong modulation of the local plasmonic den

67 ciencies, and indeed perovskite-based single bandgap and tandem solar cell designs have yielded impre

68 e on-state, the Fermi level lies in the bulk bandgap and the electrons travel ballistically through t

69 The induced nontrivial bandgap and the original directional bandgap result in v

70 with formamidinium (FA) cation have narrower bandgap and thus enhance device photocurrent.

71 The measurements reveal an indirect bandgap and two donor-acceptor pair (DAP) recombination

72 ch constitute about ~ 70%; while the optical bandgaps and electrical resistivity decrease with increa

73 gated aromatic backbones, leading to limited bandgaps and hence high conduction loss and poor energy

74 one molecular axis, engendering low optical bandgaps and improved oscillator strength for their lowe

75 MoS2 and produce two new symmetries in their bandgaps and offset crystal momentums.

76 ages over the h-phase alloys such as smaller bandgaps and smaller effective masses, which motivate th

77 over the reflection (through the 3D photonic bandgap) and the transmission (through 2D diffractive st

78 fficient luminescence, color purity, tunable bandgap, and structural diversity.

79 ving good coupling efficiency, an ultra-wide bandgap, and the capability for both n- and p-type dopin

80 n of the MoTe(2) and SnS(2) of complementary bandgaps, and the graphene interlayer provides a unique

81 e perovskites featured with a tunable energy bandgap are ideal candidates for light absorbers in tand

82 g energies, exciton radii, and free-particle bandgaps are also determined.

83 in films of SrNbO3+delta and find that their bandgaps are approximately 4.1 eV.

84 h-Z bcc metals with large spin-orbit-induced bandgaps are discussed as candidates for topologically n

85 d great interest due to their unique tunable bandgap as a function of the number of layers.

86 This new perovskite retains the same bandgap as CsPbI(3) , while the intrinsic defect concent

87 al depletion region band design and a narrow bandgap AsP as an effective carrier selective contact.

88 4) highlight the presence of an intermediate bandgap, associated with enhanced photovoltaic (PV) perf

89 effectively customizes the relatively small bandgap at the Fermi level, leading to an exotic phase t

90 ces which create highly attenuating phononic bandgaps at frequencies with negligible coupling of SAWs

91 to manipulate wave propagation and producing bandgaps at specific frequency ranges. Enhanced customiz

92 metamaterials with human gesture-controlled bandgap behaviors and soft robotic fingers which can mea

93 h a high lateral conductivity and an optimal bandgap below 1 eV, these superior CM characteristics id

94 Bandgap bowing parameters of h- (and c-) phase AlGaN, Al

95 creasing n from 0 -> 6 contracts the optical bandgap, but only marginally lowers the LUMO for n > 4.

96 While the bandgap can be conveniently tuned by mixing different ha

97 As a result, the bandgap can be tuned which varies from 1.61 to 1.85 eV.

98 n (10 +/- 1 nm) epitaxial VO(2) films due to bandgap changes throughout the whole temperature regime

99 The proposed EBG structures exhibited wide bandgap characteristics and improved scattering paramete

100 t in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to

101 lations for the new material reveal a direct bandgap, consistent with the experimental value, and rel

102 rast of about 2, which means that a photonic bandgap could be achieved using known materials at optic

103 Direct-to-indirect bandgap crossover Al mole fractions for c-phase AlGaN an

104 The use of a phononic bandgap crystal enables quantum-level transduction of hy

105 Defect-based color centers in wide-bandgap crystalline solids are actively being explored f

106 The observed bandgap dependence is in direct contrast to the behavior

107 ws additional degrees of freedom in photonic bandgap design through directed protein conformation mod

108 The optical bandgap determined by reflectance measurements is 0.6 eV

109 ductor Fermi levels become pinned inside the bandgap, deviating from the ideal Schottky-Mott rule and

110 The key parameters are electronic bandgap, dielectric constant, and carrier effective mass

111 lane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great poten

112 fer from the high-bandgap domains to the low-bandgap domains (<0.5 ps) compared to the randomly orien

113 have a faster energy transfer from the high-bandgap domains to the low-bandgap domains (<0.5 ps) com

114 t, whereby ion migration would yield smaller-bandgap domains with red-shifted photoluminescence.

115 ling from lower-dimensional nanosheets (high-bandgap domains) to 3D nanocrystals (low-bandgap domains

116 igh-bandgap domains) to 3D nanocrystals (low-bandgap domains).

117 However, there are only a few successful low-bandgap donor materials developed with near-infrared (NI

118 a useful building block for constructing low-bandgap donor materials due to its large conjugated plan

119 ls and made DPPEZnP-TRs a family of best low-bandgap donor materials in the OSC field so far.

120 acceptor for infrared absorption but a large-bandgap donor to realize a high open-circuit voltage.

121 l, the number of excitons generated on large-bandgap donors will be reduced significantly.

122 on formation, (3) the indirect nature of the bandgap (e.g., Rashba effect), and (4) photon recycling.

123 tes, and the possible indirect nature of the bandgap (e.g., Rashba effect), seem to be less likely gi

124 types of meta-materials and electromagnetic bandgap (EBG) structures to improve the performance of a

125 l(2) O(3) to enhance its absorption near the bandgap edge, the Se(0.32) Te(0.68) film (an optical ban

126 e believe, is a result of synthesizing a low bandgap electrospun metal-oxide nanomaterial correspondi

127 djust their band structure and corresponding bandgap energy by introducing oxygen vacancies.

128 thresholds were found to strongly follow the bandgap energy of the film.

129 which thus allows for precise control of the bandgap energy.

130 Here, we employ bandgap engineering to synthesize hydrogenated amorphous

131 ) with tunable ultraviolet-to-visible direct bandgaps exhibit large nonlinear optical responses due t

132 a three-dimensional ceramic printing and the bandgaps experimentally verified.

133 imilar to several synthetic devices, such as bandgap filters, laser mirrors, and (in particular) fibe

134 The RP structures show a blue-shift in bandgap for decreasing n (1.90 eV for n = 4 and 2.03 eV

135 extended and well-ordered array, inducing a bandgap for the reacted graphene layer.

136 (x) Te(1-) (x) alloy thin films with tunable bandgaps for the fabrication of high-performance SWIR ph

137 t phonon instability, so that its electronic bandgap fully vanishes?

138 Here, ultralow bandgap GNRs with charge carriers behaving as massive Di

139 The bandgap gradient and high mobility of the ternary tellur

140 possess a high density (>7 g/cm(3)) and wide bandgaps (>1.9 eV), showing great stopping power for har

141 a semiconducting material with controllable bandgap has the potential to benefit the electronic and

142 sitional and structural versatility, tunable bandgap, high photoluminescence quantum yield and facile

143 ping on the perovskite B-site can obtain low bandgap (i.e., 1.1-3.8 eV), the electrically leaky perov

144 In addition, the bandgap in diamond crystals appears at a refractive inde

145 -reversal-invariant surface state in a local bandgap in the (110)-projected bulk band structure.

146 01) surface of MnBi(2)Te(4) exhibits a large bandgap in the topological surface state.

147 with excellent formability, inducing tunable bandgaps in graphene of up to 2.1 eV, as determined by s

148 We find that bandgaps in the graphene arising from perfect rotational

149 incident light into the waveguide generating bandgaps in the transmittance spectrum, whose position i

150 Direct bandgap increases linearly with the initial angle except

151 r an efficient lasing medium based on direct-bandgap interlayer excitons in rotationally aligned atom

152 properties; nonetheless, its lack of energy bandgap is a substantial limitation for practical applic

153 This decrease in bandgap is additionally attributed to ferromagnetic orde

154 n on the density of states in the perovskite bandgap is investigated.

155 e photoluminescence emission and increase in bandgap is observed while retaining high photoluminescen

156 yer tungsten diselenide, we observe that the bandgap is renormalized downwards by several hundreds of

157 f-the-art halide perovskite solar cells have bandgaps larger than 1.45 eV, which restricts their pote

158 The wide-bandgap lead oxysalt layers also reduce the defect densi

159 ear-UV (3.27 eV, 380 nm) when excited by sub-bandgap light.

160 surface can be altered when exposed to above-bandgap light.

161 alysis and in photodetectors that circumvent bandgap limitations.

162 n walls associated with bound-charge-induced bandgap lowering.

163 most strained graphene studies have yielded bandgaps <1 eV.

164 le electronic material and what an ultrawide bandgap material such as diamond, with many appealing fu

165 at would transform diamond from an ultrawide-bandgap material to a smaller-bandgap semiconductor.

166 Designing low-bandgap materials has been a focus in order to maximize

167 oltaics, the front subcell is based on large-bandgap materials, whereas the case of the rear subcell

168 ain to monolayer MoS(2), we observe a higher bandgap modulation up to ~300 meV and a highest modulati

169 such as WS(2) or WSe(2), leading to enhanced bandgap modulation.

170 d structure and transport properties of wide-bandgap nitride interfaces.

171 photodetectors based on a novel ultranarrow-bandgap nonfullerene acceptor, CO1-4Cl, are presented, s

172 est performance reported to date for a large bandgap nonfullerene SMA.

173 Pb/Sn-based perovskites, exhibiting a narrow bandgap of 1.27 eV and a long carrier lifetime of 657.7

174 olecular framework, NITI shows a low optical bandgap of 1.49 eV in thin film and a high molar extinct

175 voltage ( V(OC)) of a device with an optical bandgap of 1.57 eV for the perovskite layer reaches 1.23

176 The perovskite absorber, with a bandgap of 1.68 electron volts, remained phase-stable un

177 N stoichiometry (C(3)N(5)) and an electronic bandgap of 1.76 eV, by thermal deammoniation of the mele

178 ]} (PDTIDTBT), which shows a relatively wide bandgap of 1.82 eV, good mobility, and high transmittanc

179 xample of a 2D Ag-Bi iodide DP with a direct bandgap of 2.00(2) eV, templated by a layer of bifunctio

180 PTAA is a p-type polymer with a large bandgap of 2.9 eV; the partial substitution of PBDB-T by

181 ed typical thicknesses of 1.3 nm, an optical bandgap of 3.5 eV and a carrier mobility of 21.5 cm(2) V

182 Can diamond, with an ultrawide bandgap of 5.6 eV, be completely metallized, solely unde

183 Rhodochrosite has a calculated bandgap of about 5.4 eV, corresponding to light energy c

184 on under hydrostatic pressure shows that the bandgap of CsPb(2) Br(5) is 0.3-0.4 eV higher than previ

185 The yttrium on grain surface increases the bandgap of grain shell, which confines the charge carrie

186 ces and excitations both above and below the bandgap of materials, and to probe their response at the

187 deep levels and their chemical trends in the bandgap of MoS(2), WS(2) and their alloys by transient s

188 bic phase, which may be related to the lower bandgap of the cubic phase.

189 en electroluminescent devices approaches the bandgap of the emitting material as the gate oxide thick

190 The bandgap of the epitaxial layers is slightly lower than p

191 The bandgap of the material is ~1.45 eV in the core region a

192 The bandgap of the samples analyzed by UV-Visible spectrosco

193 s to a systematic decrease in the electronic bandgap of VO(2).

194 edge, the Se(0.32) Te(0.68) film (an optical bandgap of ~0.8 eV)-based photoconductor exhibits a cut-

195 onolayer MoTe(2) , with the narrowest direct bandgap of ~1.1 eV among Mo- and W-based transition meta

196 eloped a stable perovskite solar cell with a bandgap of ~1.7 electron volts that retained more than 8

197 ating single bonds, endowing it with a large bandgap of ~5 eV and flexibility, while being temperatur

198 has surged in the past few years, while the bandgaps of current perovskite materials for record effi

199 bsorption measurements, it is shown that the bandgaps of Se(x) Te(1-) (x) films can be tuned continuo

200 The optical energy bandgaps of the thin films were found to be varying betw

201 circuit voltage (VOC ) deficit than narrower bandgap ones.

202 -principles simulations predict the measured bandgap openings.

203 g of C3 rotation symmetry, and thus, a small bandgap opens at the Dirac point in the bulk.

204 Gallium nitride (GaN), a mature wide bandgap optoelectronic and electronic semiconductor, is

205 ecomes nearly insensitive to increasing cell bandgap or decreasing emitter temperature.

206 insulators that have either noticeable full bandgaps or a considerable direct gap together with smal

207 nique 'fingerprints', such as characteristic bandgaps or high-order harmonic radiation.

208 ing the visible absorbing component in a low-bandgap organic bulk-heterojunction layer, an ST-PV with

209 desirable in nitride semiconductors for wide-bandgap p-channel transistors.

210 ed and experimentally confirmed to be narrow-bandgap p-type semiconductors with high Seebeck thermopo

211 An ultralarge-bandgap perovskite film (FAPbBr(2.43) Cl(0.57) , E(g) ~

212 increases the optimized thickness of narrow-bandgap perovskite films to 1000 nm, yielding exceptiona

213 t to a promising direction for achieving low-bandgap perovskite solar cells with high stability.

214 E of 26.7% of a monolithic two-terminal wide-bandgap perovskite/silicon tandem solar cell was made po

215 ance the optoelectronic properties of narrow-bandgap perovskites and unleash the potential of perovsk

216 However, commonly used tin-based narrow-bandgap perovskites have shorter carrier diffusion lengt

217 Large-bandgap perovskites offer a route to improve the efficie

218 photoluminescence quantum efficiency in wide-bandgap perovskites.

219 e tunability (from 7 to ~30 nm), an indirect bandgap, photoconductivity (responsivity = 4 +/- 1 mA/W)

220 The below-bandgap photocurrent indicates that CTEs are vital state

221 etter balance between absorption loss of sub-bandgap photons and thermalization loss of above-bandgap

222 gap photons and thermalization loss of above-bandgap photons as demonstrated by the Shockley-Queisser

223 A hole-transporting large-bandgap polymer (poly[bis(4-phenyl)(2,4,6-trimethylpheny

224 When blended with a wide-bandgap polymer donor, the DCNBT-IDT-based all-PSCs achi

225 Herein, a novel narrow-bandgap polymer, poly(5,6-dicyano-2,1,3-benzothiadiazole

226 power conversion efficiency of 12% using low-bandgap porphyrin.

227 of 20.2 and 22.7% for single junction narrow-bandgap PSCs and monolithic perovskite-perovskite tandem

228 f 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in plana

229 In this range, the bandgap reduces monotonically, much similar to other ino

230 ift of the valence band maximum resulting in bandgap reduction down to 1.76 eV.

231 The tuned bandgap remains remarkably stable under extremely intens

232 isible range caused by hydrogenation-induced bandgap renormalization, producing strong higher-order r

233 s to iodides, with their prospectively lower bandgaps, represents an important target for semiconduct

234 Using coplanar photonic bandgap resonators, we drive Rabi oscillations on nuclea

235 an alternative mechanism bypassing material bandgap restriction.

236 trivial bandgap and the original directional bandgap result in various interesting wave propagation b

237 The CPGE action spectrum above the bandgap reveals spin-polarized photocurrent generated by

238 Zinc oxide (ZnO) is a stable, direct bandgap semiconductor emitting in the UV with a multitud

239 gn focusing on oxygen vacancy (OV)-rich, low-bandgap semiconductor is proposed.

240 combining a ferroelectric BaTiO(3) , a wide-bandgap semiconductor of ZnO, and a plasmonic metal of A

241 layers, with a transition from a bulk narrow-bandgap semiconductor to a metal at the nanoscale.

242 m an ultrawide-bandgap material to a smaller-bandgap semiconductor.

243 ansform the investigated layer into a direct bandgap semiconductor.

244 d sophisticated device configuration, direct-bandgap-semiconductor nanostructures with attractive ele

245 Defect-based quantum systems in wide bandgap semiconductors are strong candidates for scalabl

246 ssable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quant

247 transition-metal dichalcogenides, are direct-bandgap semiconductors at the monolayer level, and they

248 oichiometric Ga2FeO4 NCs are intrinsic small bandgap semiconductors, off-stoichiometric GFO NCs, prod

249 west p-type sheet resistances among all wide-bandgap semiconductors.

250 ular chromophore-catalyst assemblies on wide bandgap semiconductors.

251 a: see text]) is sufficient to calculate the bandgap sequence and efficiency limits of arbitrarily co

252 The bandgap sequence and thermodynamic efficiency limits of

253 time of [Formula: see text] microseconds for bandgap-shielded cavities.

254 bsorption peaks, related to the intermediate bandgaps similar to Cu(3)VS(4) and Cu(3)VSe(4) nanocryst

255 ve the performance of single-junction narrow-bandgap solar cells and, potentially, to give a highly e

256 eld and composition polydispersity at target bandgaps, spanning 1.9 to 2.9 eV, are simultaneously tun

257 The intra-bandgap states here act as catalysts to assist I(3)(-) r

258 nsferred from reduced dye molecules to intra-bandgap states, and then to I(3)(-) species.

259 is realized using a two-dimensional phononic bandgap structure to host the optomechanical cavity, sim

260 ructural deformation leads to a blue-shifted bandgap, sub-bandgap trap states with wider energetic di

261 atomically thin semiconductors with a direct bandgap such as group VI-B transition-metal dichalcogeni

262 synthesis of semiconductors with appropriate bandgaps, suitable energy levels of the frontier orbital

263 of photo-generated charge carriers in intra-bandgap tail states.

264 es, with the 3AMPY series exhibiting smaller bandgaps than the 4AMPY series.

265 tanding, highly directional properties and a bandgap that depends on the number of layers of the mate

266 shallow electronic states in the perovskite bandgap that do not affect performance(5), perovskite de

267 vices still have many states deep within the bandgap that trap charge carriers and cause them to reco

268 , large dielectric constants, and electronic bandgaps that are relatively insensitive to disorder.

269 Owing to their tunable bandgaps, the peak responsivity position and photorespon

270 diodes exhibit a distinct low voltage (half-bandgap) threshold for emission.

271 es by comparing the steady-state absorption, bandgap, transient absorption, as well as carrier dynami

272 apable of discovering the indirect-to-direct bandgap transition and semiconductor-to-metal transition

273 rocess is affected by the indirect-to-direct bandgap transition, and a comparison of results in monol

274 emetallization as well as indirect-to-direct bandgap transitions can be achieved reversibly in diamon

275 rmation leads to a blue-shifted bandgap, sub-bandgap trap states with wider energetic distribution, a

276 ectronic applications due to their promising bandgap tunability and device performance.

277 the most efficient approach toward realizing bandgap tunability in graphene.

278 n 2D material is important due to wide range bandgap tunability.

279 With the bandgap tuned to be well suited for perovskite-on-silico

280 st in light of their solution-processing and bandgap tuning.

281 es can be ruled out as the origin of the sub-bandgap turn-on.

282 n onsets in the near infra-red with a direct bandgap value of 1.46 eV, suitable for single junction s

283 We observe bandgap values of approximately 0.8 eV, which are strong

284 2D hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination

285 motion that leads to rather unique/anomalous bandgap variation with pressure.

286 It is commonly accepted that a full bandgap voltage is required to achieving efficient elect

287 n achieve efficient EL at voltages below the bandgap voltage.

288 Efficient wide-bandgap (WBG) perovskite solar cells are needed to boost

289 ht focusing at the low frequency side of the bandgap, we detect efficiency and spectral nonlinear dep

290 evices, with their inherent indirect optical bandgap, weak light-modulation mechanism, and sophistica

291 ganic caesium lead halide perovskites have a bandgap well suited to tandem solar cells(1) but suffer

292 allows the formation of a graded electronic bandgap, which increases the carrier mobility and impede

293 of the topological modes lie within the bulk bandgap, which is not required for many topological crys

294 cs related to the existence of direct energy bandgap, which significantly lowers the leakage current

295 olating the acoustic mode of interest in the bandgap while allowing heat to be removed by phonon mode

296 - and I p-orbitals and increases the optical bandgap, while Pb-I-Pb tilting angles play a secondary r

297 The stabilized bandgap will be essential for the development of perovsk

298 This model captures the reduction of bandgap with increasing arsenic incorporation and provid

299 which show a characteristic decrease of the bandgap with respect to their RP perovskite counterparts

300 of a surrogate model, predicting electronic bandgap within an accuracy of 8 meV.

301 ctroscopy as a tool to optimize the material bandgap without altering ultrafast photophysics is repor