ライフサイエンスコーパス: dielectric

1 10 cm(2) V(-1) s(-1) on a 300 nm SiO(2) gate dielectric.

2 f the effective refractive index of the gate dielectric.

3 MoTe(2) on atomic-layer-deposited Al(2) O(3) dielectric.

4 erent topological understanding of metal and dielectric.

5 nductors, and uses hydrophobic elastomers as dielectrics.

6 -compatible, and can be directly prepared on dielectrics.

7 ts in the breakdown process of polymer-based dielectrics.

8 far outperforming the best reported flexible dielectrics.

9 arge scattering and trap sites from adjacent dielectrics.

10 ductors, rubbery semiconductors, and rubbery dielectrics.

11 m transistors were fabricated using PSBBB as dielectric, affording a performance comparable to that o

12 -well ferrielectricity, and enable combining dielectric and 2D electronic materials.

13 over the past decade owing to its excellent dielectric and ferroelectric properties.

14 The dielectric and magnetic polarizations of quantum paraele

15 we quantify the observed decoupling between dielectric and mechanical relaxations of the material in

16 very, we propose a simple 3D model where the dielectric and metallic domains are arranged in parallel

17 uld be in turn used as a knob to control the dielectric and optical properties the QWs.

18 ctical light emitting devices by considering dielectric and transparent conducting layers, this struc

19 ere, using devices with atomically-thin gate dielectrics and atomically-flat metallic gates, we measu

20 reakdown mechanisms of polymer nanocomposite dielectrics and establishes a powerful theoretical frame

21 s, including conductors, semiconductors, and dielectrics, are drawn on-demand in a freeform manner to

22 By considering metal and dielectric as just two limiting cases of a periodic meta

23 ransfer process in the CE between metals and dielectrics as well as polymers.

24 ion of SAMs for the design of ultrathin film dielectrics as well as the understanding of stereostruct

25 ~50 mus between pulses) is applied across a dielectric barrier and a gas to generate "low temperatur

26 Three dielectric barrier discharge (DBD) actuators are placed

27 compounds are first introduced into a helium dielectric barrier discharge (DBD) for breakdown.

28 2 and HT-2 toxin degradation by low pressure dielectric barrier discharge (DBD) plasma in oat flour.

29 iron(II) and iron(III) complexes caused by a dielectric barrier discharge (DBD) under ambient conditi

30 A highly efficient liquid spray dielectric barrier discharge (LSDBD) plasma-induced vapo

31 w uptake route, following non-toxic doses of dielectric barrier discharge CAP.

32 The application of dielectric barrier discharge cold plasma (DBD-CP)-treate

33 Dielectric barrier discharge ionization (DBDI) is an eme

34 , we demonstrate a flexible dielectric-metal-dielectric-based electrode with ~88.4% absolute transmit

35 s 2H-MoTe(2) monolayers on device compatible dielectrics, batch fabrication of high-mobility monolaye

36 hase shift allowed individual populations of dielectric beads overlapping in either size or RI to be

37 rent (ac) external electric field, and their dielectric behavior can be explained from the nature and

38 The substantial leakage and low dielectric breakdown observed in twinned Cr(2)O(3) thin

39 g its elastic compliance, stretchability, or dielectric breakdown strength.

40 lts) and can compromise reliability owing to dielectric breakdown(14), electric charging(15) and biof

41 tages (>kV) and corresponding failure due to dielectric breakdown.

42 ntly reducing leakage current and increasing dielectric breakdown.

43 ch a metal can continuously transform into a dielectric by varying the metal filling ratio from 1 to

44 s monolayer 2H-MoTe(2) films on inert SiO(2) dielectrics by molecular beam epitaxy is reported.

45 ese transistors with double-layer capacitive dielectric can mimic the synaptic behavior of neurons, m

46 Dielectric capacitors can store and release electric ene

47 However, as the dimensions of dielectric cavities are reduced to subwavelength scales,

48 rphous boron nitride has excellent low-kappa dielectric characteristics for high-performance electron

49 tions are used to confirm that the ultrathin dielectric cladding has negligible influence on the tran

50 green emission (540 nm) by such an ultrathin dielectric cladding is directly observed.

51 -clad cavities engineered using intermediate dielectric cladding; implementation of plasmonic cavitie

52 strength of N(2), it's essential to apply a dielectric coating on part of the electrode in GIS.

53 On the other hand, lipids are the main dielectric components of the secretome with respect to p

54 y techniques, the description of quantum and dielectric confinement effects on their optoelectronic p

55 to reach a fair understanding of quantum and dielectric confinement effects.

56 easured frequency range 10(-2)-10(6) Hz, the dielectric constant (epsilon') decreases with the increa

57 antimony oxide single crystals exhibit high dielectric constant (~100) and large breakdown voltage (

58 (0.9965), entropy = 68.4 J/mol/K (69.9), and dielectric constant = 76.1 (78.4), where experimental va

59 ing structure and related properties such as dielectric constant and solvation power.

60 sh that the chain length dependencies of the dielectric constant and surface hydrophobicity originate

61 an aqueous metal-electrolyte interface has a dielectric constant less than 1/10th of that of bulk wat

62 lations, consistent with the decrease of the dielectric constant of water.

63 A large dielectric constant of ~1700 and a low-loss tangent valu

64 te design is that an increase in the polymer dielectric constant results in reduced ion aggregation a

65 The key parameters are electronic bandgap, dielectric constant, and carrier effective mass, which d

66 The SAM capacitance, dielectric constant, and surface hydrophobicity exhibit

67 d the repulsion from the surfaces with lower dielectric constant.

68 the conducting microphase due to its higher dielectric constant.

69 Stretchable high-dielectric-constant materials are crucial for electronic

70 t isolation materials must have low relative dielectric constants (kappa values), serve as diffusion

71 e interface between two media with different dielectric constants is crucial for controlling many env

72 e disorder-tunable optical absorption, large dielectric constants, and electronic bandgaps that are r

73 ion theory, including solvent effects with a dielectric continuum model.

74 In agreement with dielectric continuum theory, lambda increased to values

75 Our results show that increasing the dielectric contrast for organic versus inorganic layers

76 ructures suitable templates for forming high-dielectric-contrast photonic crystals with cubic diamond

77 onons existing in liquid/solid helium, or in dielectric crystals (Bi, NaF) at low temperatures.

78 In contrast, dipolar order in dielectric crystals is typically limited to parallel (fe

79 , the suppression of magnetic resonance of a dielectric cuboid, an analogue to the scattering cancell

80 Random dielectrics defines a class of non-absorbing materials w

81 ge operation of PBTTT OFETs with high-k gate dielectrics demonstrated a potential for designing scala

82 of PE-ALD enables deposition of thin (2 nm) dielectrics directly on graphene and other two-dimension

83 ors as prototypes, we experimentally monitor dielectric disorder by probing the statistics and correl

84 The dielectric dissipation factor of Al(0.52)In(0.48)P was e

85 ented synergy between neighbouring metal and dielectric domains in composite samples.

86 ene by a hydrothermal method with subsequent dielectric doping and detect a topologically non-trivial

87 linear optical polarization in an insulating dielectric driven by femtosecond optical fields.

88 itride (hBN) provides an excellent interface dielectric, efficiently reducing charge scattering(2,3).

89 ted through enhancements in performance of a dielectric elastomer actuator and energy-harvesting tran

90 shape memory alloys (SMAs), piezoelectrics, dielectric elastomer actuators (DEAs), ionic electroacti

91 otion-capture system to provide power to the dielectric elastomer actuators and to control their flig

92 However, shape morphing with dielectric elastomers has not been possible since no gen

93 lead to catastrophic failure of conventional dielectric electroadhesives.

94 Even moderate fluctuations of the dielectric environment are shown to induce large variati

95 ron nitride interacting with the surrounding dielectric environment comprising the low-loss phase cha

96 ique that is based on the sensitivity to the dielectric environment of the exciton excited states in

97 tuned by controlling their morphology, local dielectric environment, and free carrier concentration.

98 eraction due to fluctuations of the external dielectric environment.

99 indicates the importance of the microscopic dielectric environment.

100 ith comprehensive investigation of different dielectric environments and morphologies, we demonstrate

101 a hydrophobic topcoat for electrowetting-on-dielectric (EWOD)(11-13); this increases the actuation v

102 Herein we report the fabrication, dielectric, ferroelectric, piezo-response force microsco

103 the design of scalable and efficient polymer dielectrics for electrical power and electronic systems

104 thus encouraging the search for alternative dielectrics for nanophotonics.

105 ry IR response of this material, an accurate dielectric function is required.

106 the various vibrational states dictating the dielectric function model and the intriguing optical pro

107 Here, the accurate IR dielectric function of alpha-MoO(3) is reported by model

108 ameterized band structure and a static model dielectric function, although a full ab initio implement

109 -light scattering to changes in the material dielectric function.

110 hile offering a novel approach to extracting dielectric functions of nanomaterials.

111 reement with theoretical calculations of the dielectric functions.

112 eld effect transistors (FET) with high-kappa dielectric gates, van der Waals heterostructures, and me

113 wever, conventional high-performance polymer dielectrics generally have conjugated aromatic backbones

114 ity: The metal has a negative sign while the dielectric has a positive one.

115 Metal and dielectric have long been thought as two different state

116 Dielectrics have long been considered as unsuitable for

117 ated with laser-induced damage in multilayer dielectric high reflectors is investigated for pulses be

118 ) V(-1) s(-1) is achieved on a high-k ZrO(2) dielectric in the homojunction devices.

119 ble properties, such as flexibility, durable dielectric insulation, barrier properties against enviro

120 one-half is named as the "generalized metal/dielectric." Interestingly, the surface plasmon polarito

121 , the minimum potential at the ferroelectric-dielectric interface and hence, the minimum surface pote

122 e surface plasmon polariton (SPP) at a metal/dielectric interface can be understood as the limiting c

123 e plasmon polariton that exists at the metal-dielectric interface is believed to support a unidirecti

124 y and that stability is assured at the metal-dielectric interface.

125 nd the light propagation behavior at a metal/dielectric interface.

126 e moves in the vicinity of and parallel to a dielectric interface.

127 that the surface plasmon-polariton at metal-dielectric interfaces remains bidirectional for all freq

128 Plasmonics on metal-dielectric interfaces was widely seen as the main route

129 ieved here by optical microscopy for a model dielectric ionic nanocrystal, a silver halide NP.

130 A low-index dielectric is necessary for the sensing medium to suppor

131 In contrast, a dielectric is transparent to electromagnetic waves.

132 ng the breakdown mechanisms of polymer-based dielectrics is critical to achieving high-density energy

133 ium alginate bio-polymer electrolyte as gate dielectric, is demonstrated.

134 Dielectric laser accelerators (DLAs) provide a compact a

135 l actuation, the substrate is covered with a dielectric layer and a hydrophobic topcoat for electrowe

136 ng a buried-gate geometry with HfO(2) as the dielectric layer and on-line signal processing circuits

137 able refractive index has been chosen as the dielectric layer for the excitation of LRSP modes replac

138 ransistors (FETs) covered with a thin SiO(2) dielectric layer have been successfully functionalized w

139 e distinct plasmonic materials sandwiching a dielectric layer in a multilayer core shell configuratio

140 spended MoS(2) transistor by functionalizing dielectric layer with E. coli antibodies.

141 o dissimilar metal electrodes, sandwiching a dielectric layer, is able to achieve an NO reduction in

142 urface, or a conductive surface covered with dielectric layer.

143 RSPR based biosensors with SiO(2) as tunable dielectric layer.

144 just two limiting cases of a periodic metal-dielectric layered metamaterial, from which a metal can

145 with a large active area and periodic metal-dielectric layers to excite plasmonic Fano resonance tra

146 ttern of MoS(2); the second, the printing of dielectric layers, contacts, and connections to complete

147 isolated from each other by non-conducting (dielectric) layers.

148 st time that by placing a spherical constant dielectric lens (constant-e(r)) in front of the radiatin

149 ethods which did not assess the influence of dielectric loss (sensor charge movements out of phase wi

150 analysis of the power dissipation due to the dielectric loss are in good agreement with the experimen

151 Ti(3)C(2)T(x) MXenes possess a high dielectric loss tangent, which is correlated with this r

152 In contrast to plasmonic structures, the all-dielectric magnetic metasurface is shown to exhibit much

153 By using a patterned dielectric mask with openings slightly larger than devic

154 involving the planar interface of a uniaxial dielectric material and an isotropic dielectric material

155 d by the planar interface of an orthorhombic dielectric material and an isotropic dielectric material

156 lobutene based polymer, PSBBB, designed as a dielectric material for use in organic thin film transis

157 niaxial dielectric material and an isotropic dielectric material for which only one Dyakonov-Voigt su

158 nlinear photonic devices are mainly based on dielectric material platforms, such as Si(3)N(4) and SiO

159 rhombic dielectric material and an isotropic dielectric material were analyzed theoretically and nume

160 charges trapped in the surface states of the dielectric material.

161 t nanoscale semiconductor fabrications, high dielectric materials and ultrathin multilayers have been

162 High-index dielectric materials are in great demand for nanophotoni

163 freedom to dynamically control this in high dielectric materials for light-sensitive capacitance app

164 Electrets are dielectric materials that have a quasi-permanent dipole

165 roducing inclusions in stretchable polymeric dielectric materials to improve electrical performance.

166 ure degradation and electrical conduction of dielectric materials, and ultimately, to catastrophic fa

167 usion times, the nanoscale size reduction of dielectric materials-such as ionic crystals-has fueled s

168 lly-orthogonal and intrinsically stretchable dielectric materials.

169 g elastomeric conductors, semiconductors and dielectric materials.

170 Variable-temperature dielectric measurements and crystal structures determine

171 Temperature dependent dielectric measurements carried out on Pt/PbPdT/La(0.7)S

172 erprint of the matrix has been determined by dielectric measurements in terms of "gain" spectra (rela

173 er pulses has recently been achieved in some dielectric media, showing potential for ultrafast data s

174 wires, insulation, adjunctive catheters, and dielectric medium interact.

175 orated with plasmonic layers and surrounding dielectric medium.

176 evanescent field that extends well into the dielectric medium.

177 radiative heat transfer between rectangular dielectric membranes that is consistent with our experim

178 We also realize highly tunable all-dielectric meta-atoms by coupling a-Si:H NPs to photochr

179 n Pt/PbPdT/La(0.7)Sr(0.3)MnO(3) (LSMO) metal-dielectric-metal capacitors suggest a ferroelectric to p

180 mance is achieved by leveraging an optimized dielectric-metal-dielectric structure guided by analytic

181 Here, we demonstrate a flexible dielectric-metal-dielectric-based electrode with ~88.4%

182 interfaces between optical media (including dielectrics, metals, negative-index materials) can suppo

183 elow the diffraction limit using transparent dielectric metamaterials.

184 We demonstrate how dielectric metasurfaces can be leveraged to shape the te

185 than the threshold power of state-of the-art dielectric micro combs.

186 Dielectric microcavities with quality factors (Q-factors

187 those structures are Bragg mirrors, chirped dielectric mirrors or the gratings on top of Morpho butt

188 e show that polarization effects due to such dielectric mismatch remarkably influence the double-laye

189 Continuum dielectric models often work well in describing the ther

190 Metal-dielectric multilayers are versatile optical devices tha

191 earch efforts mostly focus on periodic metal-dielectric multilayers in hyperbolic dispersion region;

192 Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and n

193 support the so-called interfacial effect in dielectric nanocomposites.

194 a topologically non-trivial zigzag array of dielectric nanoparticles and the demonstration of strong

195 NORAMA can detect, count and size individual dielectric nanoparticles beyond 25 nm, and dynamically m

196 High-index dielectric nanoparticles supporting a distinct series of

197 es on unscattered light to detect sub-100 nm dielectric nanoparticles.

198 sulators are particularly apt candidates for dielectric nanophotonics architectures in the infrared s

199 All-dielectric nanostructures have recently opened exciting

200 The dielectric nature of polar liquids underpins much of the

201 lusive in nearly ferromagnetic metals and in dielectrics on the border of displacive ferroelectric tr

202 Flexible dielectrics operable under simultaneous electric and the

203 g applications as tunnel barriers, capacitor dielectrics or gate insulators in close proximity to qub

204 ted by analyzing a mixture of three types of dielectric particles within a narrow size range, where c

205 equivalent to a periodic array of classical dielectric particles, whose periodicity supports the eme

206 localized at the interface in the isotropic dielectric partnering material.

207 py; (4) the reaction is sensitive to solvent dielectric, performing best in moderately polar solvents

208 ese high-quality nanostructures exhibit high dielectric permittivity (~1300), slim electric field-dep

209 The dielectric permittivity of water in the millimeter wave

210 re, has a continuously tapered inhomogeneous dielectric permittivity profile along its thickness, and

211 also reveal a significant tunability of the dielectric permittivity upon mixing of the molecular cat

212 flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability

213 role of the filler-matrix interfaces on the dielectric, piezoelectric, pyroelectric, and electrocalo

214 ereby providing new opportunities to combine dielectric, plasmonic and magnetic metamaterials in a si

215 Here, the usage of dielectric polarization in surface coating to suppress t

216 ng a performance comparable to that of other dielectric polymeric materials.

217 ectrical grids requires reliable and durable dielectric polymers for wire insulation(1,2).

218 le and medium, which in turn depend on their dielectric properties and on the field frequency.

219 olecules, which significantly enhances their dielectric properties due to orientation polarization.

220 n on Scenedesmus abundans to assess cellular dielectric properties during lipid accumulation and to p

221 In this article, the dielectric properties of a water model whose intermolecu

222 Additionally, the dielectric properties of acai-berry pulp were evaluated

223 d varying cell wall thickness, to obtain the dielectric properties of cellular compartments.

224 The dielectric properties of the nine developed samples are

225 nanocomposites is presented with elastic and dielectric properties that make them uniquely suited for

226 particles (polystyrene beads) based on their dielectric properties using DEP action.

227 These dielectric properties were further used to estimate the

228 en investigated as models for the buildup of dielectric properties, differentiating the role of chemi

229 ensive metal-ligand coordination and tunable dielectric properties, the extent of ionic aggregation i

230 ) possesses excellent chemical stability and dielectric properties.

231 s based on concentric shells with adjustable dielectric properties.

232 f the effective (reduced) exciton masses and dielectric properties.

233 and non-healthy tissues by exploiting their dielectric properties.

234 ved rotational dynamics contributed to their dielectric properties.

235 s the yeast cells with targeted diameter and dielectric property can be easily achieved.

236 piezoelectricity, biocompatibility, and low dielectric property.

237 Well-confined excitons/charge carriers in a dielectric/quantum well based on conventional spatial or

238 tion phenomena and by alpha, beta, and gamma dielectric relaxation events of Nafion domains supported

239 A large, frequency dependent dielectric relaxation is seen in the poled [001] crystal

240 such as label-free photonic methods based on dielectric resonances.

241 Optically-refrigerating the lattice of a dielectric resonator has the potential to impact several

242 nificant modulation of the absorption of the dielectric resonator in the hybrid metamaterial is also

243 ngly these cocrystals exhibited very diverse dielectric response in the presence of an alternating cu

244 astic moduli of materials from the effective dielectric response.

245 g is reflected in the ferroelectric-like THz dielectric responses of lead halide perovskites (LHPs) a

246 solids, and inspires further exploration of dielectric responses to strong electromechanical fields.

247 affecting its dimensions, and the concentric dielectric rings etched in the ground-plane act as shunt

248 Concentric dielectric-rings are etched in the ground-plane under th

249 ic energy through the gaps of the concentric dielectric-rings in the ground-plane using a microstrip

250 The dielectric screening in LHPs on the 10(-13) s timescale

251 on of hydrogen-like defect states by reduced dielectric screening in ultrathin 2D films.

252 ydrogen-bond configurations, and long-ranged dielectric screening of distant charges, competing effec

253 e key role of electron-hole interactions and dielectric screening.

254 ign of three NZI devices: a high-sensitivity dielectric sensor, an efficient acousto-microwave modula

255 We explore low-loss multilayer dielectric SiO(2)/HfO(2) mirrors which are commonly empl

256 The dielectric slide mechanism assumes decreasing acidity of

257 like model incorporating thermally-activated dielectric solvation with more standard solid-state theo

258 ing cyclic peptide conformations in both low-dielectric solvent (chloroform) and high-dielectric solv

259 low-dielectric solvent (chloroform) and high-dielectric solvent (DMSO) to experimentally study the so

260 d identify this non-intuitive outcome in low dielectric solvents to non-isotropic electrostatic enhan

261 t metal pore sites, alleviating the need for dielectric spacers between the metal and 2DC layer.

262 xagonal boron nitride does not meet required dielectric specifications.

263 We show that Microwave Dielectric Spectroscopy (MDS) can be used to determine t

264 The results demonstrate that microwave dielectric spectroscopy can be used to reliably and effi

265 Results of dielectric spectroscopy were fitted to a pair of nine-st

266 ng rates (2-10 K/min) by thin film broadband dielectric spectroscopy.

267 s (by a factor of a few) may be expected for dielectric spheres or metallic cylinders." The work of r

268 dditional resonant elements, e.g. high index dielectric spheres.

269 polarizes an ultrathin film of an archetypal dielectric SrTiO(3) via flexoelectricity, which in turn

270 se transition from the metallic state to the dielectric state occurs when the filling ratio is one-ha

271 ng the metamaterials into metallic state and dielectric state.

272 by leveraging an optimized dielectric-metal-dielectric structure guided by analytical and quantitati

273 Periodic metal-dielectric structures attract substantial interest since

274 d metallic geometry that is patterned onto a dielectric substrate and incorporate active devices or m

275 rfectly conducting circular wire on top of a dielectric substrate of finite thickness but infinite wi

276 on, and fabricated on a thin sheet of an FR4 dielectric substrate.The CSRR sensing elements are coupl

277 both excitation and emission fields through dielectric superlensing effects, luminescence amplificat

278 The dielectric superlensing-mediated strategy may provide a

279 with static charges fully constrained on the dielectric surface, the device works based on the shuttl

280 the influence of the inhomogeneous effective dielectric surrounding a substrate within the protein en

281 n experimental study of the evolution of the dielectric susceptibility peak as a function of pressure

282 atterns using thermal imaging in macroscopic dielectric systems.

283 Such arrays form effective dielectrics that are virtually dispersion-free over ultr

284 rticles grow to a larger extent over charged dielectrics that yield stable cationic fragments (smalle

285 lize our previous understanding of metal and dielectric: The metamaterial with metal filling ratio la

286 ositive breakdown expected from conventional dielectric theory and recent observations.

287 d by screening become important only at gate dielectric thicknesses of a few nm, much smaller than a

288 sistent impurity binding energy of ~1 eV for dielectric thin films.

289 oelectricity enables damage-free exposure of dielectrics to strong electric fields, leading to revers

290 ganic and organic semiconductors, metals and dielectrics, to ceramics and even 2D materials (e.g., gr

291 o exhibit a degree of electric field induced dielectric tunability at radio frequencies, to the level

292 However, the full extent of their dielectric tunability remains fully unexplored, due to a

293 f not only their optical and radio frequency dielectric tunability, but also for the creation of EC s

294 scaled interconnects because integration of dielectrics using low-temperature deposition processes c

295 oronic acid-hydrogels exhibit volumetric and dielectric variations in response to environmental gluco

296 The dielectric voltammetric analysis was carried out from 0

297 ion is a property of all naturally occurring dielectrics whereby they are mechanically deformed under

298 and Systems recommends(4) the development of dielectrics with kappa values of less than 2 by 2028.

299 gned to combine the visible transmittance of dielectrics with the electronic properties of metals for

300 We report dielectrics with ultrahigh energy densities designed wit