ライフサイエンスコーパス: dopant

1 d, importantly, the electron affinity of the dopant.

2 ther tuned by using Pd in place of Pt as the dopant.

3 -yl)-N,N-dimethylbenzenamine (N-DMBI) as the dopant.

4 detailed using physically adsorbed molecular dopants.

5 at such hole gases can form without acceptor dopants.

6 s are known to be promoted by heavier alkali dopants.

7 excellent miscibility with, commonly used n-dopants.

8 usive mainly due to the random dispersion of dopants.

9 tructural heterogeneity introduced by Sm(3+) dopants.

10 empirically favors a uniform distribution of dopants.

11 ith novel surface structures using different dopants.

12 self-assembled NCs using different elemental dopants.

13 roscopy are used to investigate the drift of dopants.

14 nization potentials of their Ag(+) and Cu(+) dopants.

15 hene) (PQT12) to increase oxidizability by p-dopants.

16 TAD, doped with two differently sized p-type dopants.

17 and conductivity as well as the presence of dopants.

18 geometric structures regulated by V(O) and N dopants.

19 sms underlying the segregation of aliovalent dopants.

20 and generally suffer from toxic and complex dopants.

21 photoproduct as a function of the different dopants.

22 ms, and emerge even at the level of a single dopant(1).

23 daries(7), facets(8), oxidation state(9) and dopants(10).

24 eved by incorporating the electron-accepting dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimeth

25 p-type conjugated polymers by adding n-type dopant 2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-b

26 ized electrons, such as those in single atom dopants(8,9) or crystal defects(10-12).

27 holesteric helices, is comprised of a chiral dopant, a conventional nematic, and bimesogenic and trim

28 Aluminum is a common dopant across oxide cathodes for improving the bulk and

29 ong variation in the degree of activation by dopants across the 3d transition-metal series.

30 It is reported that dopant aggregation effectively boosts the cyclability of

31 Trivalent dopants (Al(3+), Co(3+), Sc(3+), In(3+), Y(3+), Gd(3+) a

32 the electrode surface; Sc, Al, and V surface dopants also could be worthy of further investigation.

33 ing model and found that the distribution of dopants alters the distribution of the density of states

34 Using acetonitrile as a dopant, an increased sensitivity was observed compared t

35 Zn(C(6) F(5) )(2) acts simultaneously as a p-dopant and a microstructure modifier.

36 dopant coupling from the overlap between the dopant and exciton wave functions of the host lattice.

37 The converse combinations of polymer and dopant and formulations using a polymer with both the su

38 and found to act as a simultaneous molecular dopant and morphology-additive.

39 as a result of both the contribution of the dopant and of the confinement effect in the bidimensiona

40 acterization of the microenvironments at the dopant and other sites.

41 that may couple to states induced by the Fe-dopant and the adsorbate molecule, and crossing between

42 e relative molecular orientation between the dopant and the OSC host.

43 Due to the likely synergistic effect of N dopant and V(O) , the V(O) -rich N-SnO(2) NS exhibits hi

44 oping concentration, the association between dopant and V(o) formed (Zn, V(o))(x) defect clusters.

45 The commonly used HTLs require hygroscopic dopants and additives for optimal performance, which add

46 The key in semiconductors is that dopants and defects can tune their electronic properties

47 ework incorporates nonequilibrium synthesis, dopants and defects, and the change of the electronic st

48 23 to 25 K) by precipitating-out the cobalt dopants and giving larger overall a-lattice parameter.

49 ate the intrinsic defect process, favourable dopants and migration energies of lithium ion diffusions

50 , we report a combination of photo-switching dopants and organic phase-change materials as a way to i

51 type of SnO(2) nanosheet with simultaneous N dopants and oxygen vacancies (V(O) -rich N-SnO(2) NS) fo

52 ed by the simultaneous bottom-up assembly of dopants and silicon at the seed level in molten salts me

53 d(0) ferromagnetism, spin ordering of the Te dopants and the surface-state-induced magnetic ordering.

54 we show that Al(3+) or Co(3+) are the ideal dopants and this is in agreement with the experimental s

55 es of configurations, namely isolated single dopants and tridopant clusters.

56 oring the metal atoms, adjacent coordinative dopants, and metal loading.

57 es this without the introduction of external dopants, and therefore the tetragonal crystal structure

58 o a factor of four in the presence of alkali dopants, and therefore, defect concentration decreases.

59 alytic activities toward the HzOR, and their dopant- and structure-related electrocatalytic propertie

60 ed chemical environments induced by nitrogen dopant are revealed by XANES and RIXS measurements.

61 hange among PEDOT, PSS, and the molecular de-dopants are characterized to reveal the underlying chemi

62 Molecular dopants are often added to semiconducting polymers to im

63 The synergetic effects of N and Ni dopants are revealed by density functional theory calcul

64 species and confirmed both water as well as dopants as potential sources.

65 ic acid (carbon skeleton) and urea (nitrogen dopant) as source materials.

66 ositions followed the same trends in ESI and dopant-assisted APPI with the latter presenting saturate

67 have implemented other techniques, including dopant-assisted atmospheric pressure photoionization (AP

68 or the formation of radical cationic PAHs in dopant-assisted DBDI.

69 Fundamental aspects of undoped and dopant-assisted dielectric barrier discharge ionization

70 anding of fundamental aspects, especially of dopant-assisted ionization in a dielectric barrier disch

71 ddition, Na and K are predicted to be n-type dopants at grain boundaries.

72 The integration of substitutional dopants at predetermined positions along the hexagonal l

73 P, As, Sb) and Halogen group (F, Cl, Br, I) dopants at the S site of monolayer MoS(2).

74 ment and the distance between the Fe and the dopant atom is discussed.

75 ironment on the electronic properties of the dopant atom needs to be clarified.

76 ndent on the distance between the Fe and the dopant atom.

77 s model to show that the Bader charge of the dopant atoms is strongly dependent upon the nearest neig

78 Herein, the first chiral dopant-based mass spectrometric assay, with its foundati

79 mismatch of CdS/ZnS core/shell QDs on Mn(II) dopant behavior was studied.

80 asing conductivity for the electron-donating dopant benzyl viologen.

81 activation of a cleavable air-stable dimeric dopant can result in kinetically stable and efficient n-

82 nd that the ionization energy of the surface dopant can serve as a good descriptor for both the stabi

83 ed in the ionization process and showed that dopants can affect the internal energy (-39.4 kJ mol(-1)

84 the energy transfer between host CdS QDs and dopants can be finely turned in a wide range by dopant m

85 It is known that dopants can be subjected to strong diffusion in certain

86 The negatively charged dopants can drift upon application of an electric field

87 Here, we reveal the surface segregation of dopant cations and oxygen vacancies and observe bonding

88 Segregation of aliovalent dopant cations is a common degradation pathway on perovs

89 alculations indicate that introduction of Fe dopants changes the character of the conduction band min

90 That is, the Ni dopants cluster around surface oxygen vacancy of the hos

91 e localized primarily within covalent [MSe4] dopant clusters (M = Ag(+), Cu(+)).

92 type and n-type doped, respectively, whereas dopant-compensated CH3NH3PbBr2.94Cl0.06 alloy has over t

93 Here we report a dopant compensation in alloyed OIHP single crystals to o

94 producing programmable LSPR redshifts due to dopant compensation.

95 with unprecedented wide-range tunability in dopant composition (M = V, Cr, Mn, Fe, Co, Ni, Cu, Mo, e

96 is structure is well preserved with variable dopant compositions and concentrations, leading to a div

97 Secondary dopants comprising singlet fluorophores or iridium organ

98 However, to date, accurate control over dopant concentration and scalability of the process rema

99 ties beneficially reduce the high native net dopant concentration in the space charge region, (ii) sp

100 h dopant concentrations generally limits the dopant concentration to less than 1-5 mol% in lanthanide

101 and ionic mobility of CeO(2) altered by the dopant concentration were explored.

102 ence of the long-time FE order fraction upon dopant concentration, and upon quenching temperature, th

103 Depending on the Mn(II) dopant concentration, we obtain significant signal enhan

104 t-transistors are directly correlated to the dopant concentration, with degrading device performances

105 splitting is engineered by manipulating the dopant concentration.

106 ectron branch is modulated by varying the BV dopant concentrations and annealing conditions.

107 Dopant concentrations are uniformly distributed over the

108 Luminescence quenching at high dopant concentrations generally limits the dopant concen

109 nce that the major quenching process at high dopant concentrations is the energy migration to the sur

110 scape their dopant counterion, but at higher dopant concentrations, holes become mobile.

111 eement with experiment, in particular at low dopant concentrations, larger supercells are needed, whi

112 n Fe-doped hexagonal ZnO and ZnS at very low dopant concentrations.

113 network: (17)O signals originating from the dopant-coordinating oxygens are resolved and used for fu

114 in the aggregates cannot easily escape their dopant counterion, but at higher dopant concentrations,

115 the host lattice, which determines the host-dopant coupling from the overlap between the dopant and

116 ation-exchange reactions to introduce p-type dopants (Cu(+), Ag(+), etc.) into n-type metal-oxide nan

117 DFT calculations reveal that carbon dopant decreases the energy barrier of Heyrovsky step fr

118 This synthetic method allows tuning of dopant-dependent properties of TiO(2) nanomaterials for

119 atalytic process in silicon nanowires yields dopant-dependent, massive and ordered 3D grooves with sp

120 Upon the dopants' directional movement in P3HT, a dedoped region

121 k systems to modelling 'real' materials with dopants, dislocations, grain boundaries and interfaces;

122 ght emitting devices using XPT and XtBuCT as dopants displayed electroluminescence external quantum e

123 hydrogen intermediate binding, while the Zn dopants distribute inside the host oxide and modulate th

124 ults highlight the importance of controlling dopant distribution within conjugated polymer films for

125 However, the use of such dopants does not always produce mobile charge carriers.

126 e lattice and (ii) the elastic energy of the dopant due to cation size mismatch, which also promotes

127 lloy nanoparticles with different numbers of dopants due to the similarities of metals in outmost ele

128 on substitution, defect engineering, and the dopant effect to address the above two critical issues i

129 olecular ions without evidence of solvent or dopant effects as observed in atmospheric pressure photo

130 and holes, edge effects, and the presence of dopant elements.

131 The OLEDs using DCBPy and DTCBPy as dopants emit blue and green light with EQEs of 24.0 and

132 minescence device based on 3DPyM-pDTC as the dopant emitter can reach an extremely high external quan

133 g these compounds either as host emitters or dopant emitters in suitable host matrix and exhibited gr

134 The practice of comparing host and dopant energy levels must consider the long-range electr

135 s work not only deepens the understanding on dopant evolution but also offers a conceptually new appr

136 new fluorescent molecular switches as chiral dopants exhibit reversible reflection color tuning spann

137 -ion batteries where the sample with 3% of N-dopant exhibits optimum performance with a capacity of 5

138 We found that varying the concentration of dopants exposed to the as-synthesized PbSe QDs controls

139 g a substituted boron cluster as a molecular dopant for conjugated polymers is employed.

140 ectroscopy confirms that Ag acts as a p-type dopant for PbSe QDs and infrared spectroscopy is consist

141 TBAF) is demonstrated as an efficient n-type dopant for the conjugated polymer ClBDPPV.

142 Developing dopant-free hole transporting layers (HTLs) is critical

143 ed by a facile synthetic route as a superior dopant-free HTL for lead-free tin-based perovskite solar

144 Their dopant-free MA(0.7) FA(0.3) PbI(2.85) Br(0.15) devices e

145 re in designing efficient semiconductors for dopant-free PVSCs.

146 on ethylenediammonium/formamidinium with the dopant-free TPE HTL achieve a power conversion efficienc

147 -energy photons and is compatible with ionic-dopant-free transport layers.

148 the first time, oxygen vacancy defect-rich, dopant-free ZrO2 nanostructures with high TC (700 K) and

149 oroughly removing pyrrolic-N and pyridinic-N dopants from N-enriched porous carbon particles, to crea

150 can be achieved by spatially separating the dopants from the charge transport pathways.

151 Compared to carboxyl dopants, the sulfoxide dopants further improved the electron communication betw

152 e, CHCl(3), CHBr(3), and CHI(3) were used as dopant gases to produce Cl(-), Br(-), and I(-) as RIs.

153 solution energies calculated for tetravalent dopants (Ge(4+) and Si(4+)) on the Ti site suggest the n

154 cture calculations further predict that both dopants generate similar localized mid-gap states.

155 Alkali metal dopants greatly improve perovskite performance.

156 eover, enrichment of the gas with an organic dopant has led to an improved desolvation and ionization

157 uster catalysts with atomic-level control of dopants has been a long-standing challenge.

158 nterest in nanostructures of silicon and its dopants has significantly increased.

159 icated with (MAC*)Cu(Cz) as a green emissive dopant have high external quantum efficiencies (EQE = 19

160 Although a variety of stable molecular p-dopants have been developed and successfully deployed in

161 agnetic properties in the presence of A-site dopants have not been explored widely.

162 (3) are selected as model systems, where the dopants have the same charge but different ionic sizes.

163 So far, their edges, dopant heteroatoms and defects have been intensively exp

164 Here, the impact of molecular orientation on dopant-host electronic interactions by large modulation

165 d semiconductor nanocrystals, the controlled dopant-host lattice coupling by dopant migration is stil

166 Arsenic is a promising p-type dopant; however, reproducible doping with high concentra

167 e of carbon substrate and amount of nitrogen dopants (i.e., graphitic nitrogen) were modulated by the

168 Ag(+) is an emerging electronic dopant in III-V and II-VI nanostructures, introducing in

169 s of this chemistry for use of F4TCNQ as a p-dopant in organic electronic materials is discussed.

170 charge transfer complex formation and as a p-dopant in organic electronic materials.

171 t couples to the electrostatic energy of the dopant in the perovskite lattice and (ii) the elastic en

172 olarons are predicted to form around charged dopants in an antiferromagnetic background in the low-do

173 sional distribution of aliovalent lanthanide dopants in ceria catalysts and their effect on the surfa

174 ight the role of the spatial distribution of dopants in determining overall charge transport.

175 o control the valley pseudospin via magnetic dopants in layered semiconducting materials, paving the

176 ional theory calculation, we reveal aluminum dopants in lithium nickel cobalt aluminum oxide are part

177 nternal magnetic moments induced by magnetic dopants in MoS(2) monolayers are shown to serve as a new

178 alignment of the emitting molecules used as dopants in organic light-emitting diodes is an effective

179 c devices; yet, controlling the diffusion of dopants in organic semiconductors and their stability ha

180 we present atom-resolved images of Ag and In dopants in Sb(2)Te-based (AIST) PCM using electron micro

181 Phosphorus dopants in silicon can be placed with atomic precision t

182 a diverse library of TiO(2) NRs wherein the dopants in single-atom form are homogeneously distribute

183 e Pd framework to accommodate interstitial B dopants in the octahedral sites of the distorted FCC str

184 able incorporation of Mg is attributed to Mg dopants incorporating substitutionally for Ga during gro

185 emistry, Mg and O diffusion and a variety of dopant incorporation at Mg and Ti sites.

186 n establishing reaction kinetics that favors dopant incorporation by using the co-thermolysis method.

187 er-to-layer spacing increases upon molecular dopant incorporation.

188 riginate from cooperating graphitic nitrogen dopants induced by the diamine precursors, as demonstrat

189 In addition to Stokes-shifted and tunable dopant-induced photoluminescence emission, the copper do

190 al and global understanding of how different dopants influence the properties of molecular crystals.

191 dologies have been developed for introducing dopants inside the size-confined semiconductor nanocryst

192 nhanced charge-transfer interactions at host/dopant interface with increasing face-on orientation of

193 incorporation of the electron-accepting TCBQ dopant into the organic sublattice containing the electr

194 we explain the shuttling pathways of single dopants into and out of the nanoparticles.

195 hanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N

196 Incorporating ferromagnetic dopants into three-dimensional topological insulator thi

197 his is in part due to inefficient doping and dopant ions disturbing the ordering of polymers, limitin

198 tion only leads to the surface attachment of dopant ions in three-dimensional structures.

199 The introduction of dopant ions provides pathways to manipulate the electron

200 io of the emission from the host lattice and dopant ions.

201 on misconception of cross-relaxation between dopant ions.

202 This study shows that the single dopant is shuttled into the hollow Au24 nanoparticle eit

203 study, a general method for selecting metal dopant is worked out in theory and validated by experime

204 In achiral liquid crystals, dopant knotted and unknotted strands induce supramolecul

205 trates a viable approach to introducing true dopant-level impurities with high precision, which can b

206 Both n-type and p-type dopant levels are calculated to be deep mid-gap states (

207 th particle types we found that the moderate dopant levels required for optimum magnetic properties d

208 The deep dopant levels result from the giant renormalization of h

209 trostatic attraction from the anions of most dopants localizes the holes created on the polymer, redu

210 harp (27)Al and (71)Ga resonances arise from dopants located at a highly symmetric tetrahedral 24d si

211 Determination of the precise dopant location is an unsolved problem in applications f

212 ion between the lowest empty d-states on the dopant metal atoms and occupied p-states on S.

213 ng blocks, as well as careful control of the dopant metallic nanoparticles or semiconductors, are bel

214 e controlled dopant-host lattice coupling by dopant migration is still unexplored.

215 The dopant migration rate could be represented by the Arrhen

216 ants can be finely turned in a wide range by dopant migration toward the alloyed interface during ZnS

217 It was found that the dopant migration toward the alloyed interface of core/sh

218 Divalent dopants (Mn(2+), Fe(2+), Co(2+), Ca(2+) and Zn(2+)) on t

219 Dopant mobilities of 10(-9) to 10(-8) cm(2) V(-1) s(-1)

220 nstrate a general principle as how the trace dopants modify the solid-liquid interfacial reactions fo

221 als combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated.

222 Incorporation of the dopant molecules into electronically coupled CsPbI(3) na

223 Carbon nanotubes, graphene nanoribbons and dopant nanowires have potential as electrodes for discre

224 sable small-anion salts such as TBAF as an n-dopant of organic conjugated polymers possessing lower L

225 vealed that graphitic sulfoxide and carboxyl dopants of graphene were the efficient binding sites for

226 The oxidized CNFs were utilized as dopants of PEDOT to prepare the composite coatings throu

227 ntitative information on the distribution of dopants on the atomic-scale.

228 rmine the influence of different supervalent dopants on the crystal structure and site preferences, w

229 provided insights into the effect of the Pt dopants on the optical properties and stability of the c

230 to significant mobility increases induced by dopants on the order of 1-5 cm(2) V(-1) s(-1), supported

231 cule accepts an electron from a near-surface dopant or (ii) when a photo-generated electron is transf

232 y thermalize before damage is induced on the dopant or host.

233 hermal ionization of NaCl is employed as the dopant or the ionizing reagent to ionize heavy metals.

234 without relying on additional photoreactive dopants or alignment layers.

235 ing long-range interactions between multiple dopants or defects is challenging(13,14).

236 The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by

237 o essentially uniform distribution of the Nb dopant over the TiO(2) surface and no measurable segrega

238 valley interference by engineering in-plane dopant placement along specific crystallographic directi

239 envelope anisotropy, valley interference and dopant placement on the Heisenberg spin exchange interac

240 The heteroatom dopant plays an indispensable role in the activation of

241 ng of organic semiconductors using molecular dopants plays a key role in the fabrication of efficient

242 In the absence of dopants, polycyclic aromatic hydrocarbons (PAHs) mostly

243 nonionic conductivity among films made from dopant-polymer solutions.

244 of less than 10 considering the accuracy in dopant positioning.

245 ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface.

246 Trivalent dopants prefer to occupy Mg site though their solution e

247 the presented technique yields ultra-shallow dopant profiles localised to the top few nanometres of t

248 The defect chemistry and dopant properties of this material are studied using wel

249 how that MAS-DNP from paramagnetic metal ion dopants provides an efficient approach for probing infor

250 tion of F4TCNQ in overlying solutions as the dopant radical anions maximally covered the surfaces.

251 full 4d shell Ag(+) is nonmagnetic, and the dopant-related luminescence is ascribed to decay of the

252 r with an innovative biocatalytic product-to-dopant relay mechanism for the detection of urea, with a

253 ntage of novel functionalities enabled by Mn dopants requires accurate control of doping levels over

254 oncentration of Ln-dopants suggests that the dopants reside in the vacant octahedral locations within

255 ing analysis, we unambiguously determine the dopants' role upon recrystallization.

256 ere we focus on resolving quantitatively how dopant segregation is affected by oxygen chemical potent

257 ted to the novel concept of super hydrogenic dopant (SHD)", where each Ce(4+) ion contributes an elec

258 singly, we found a very promising subsurface dopant, Si, that had not been identified or suggested pr

259 By simply adjusting the metal dopants, silicate nanoscintillators with controllable si

260 ntum dot (QD) are strongly influenced by the dopant site inside the host lattice, which determines th

261 der features originate from highly distorted dopant sites with fewer or no immediate LiO(4) neighbors

262 Li2 sites that share oxygen atoms with these dopant sites.

263 e process of immersion of polymer films into dopant solutions.

264 ionization of excess dopant to form radical dopant species, and subsequent charge exchange with the

265 Dopant substitution energies for a range of cations with

266 Our study finds that upon dopant substitution, the local magnetic moment is decrea

267 the high polymer crystallinity required with dopants such as F(4) TCNQ is primarily to keep the count

268 damping, caused by the inclusion rare-earth dopants such as holmium, acts to suppress Walker breakdo

269 ion/activation by making use of redox active dopants such as Mn linked to oxygen vacancies and dopant

270 ts such as Mn linked to oxygen vacancies and dopants such as Ni that afford metal nanoparticle exsolu

271 onated PAHs, while the introduction of other dopants, such as fluorobenzene and chlorobenzene, shifte

272 ng alumina with a sparse concentration of Ln-dopants suggests that the dopants reside in the vacant o

273 s in the past decade, air-stable molecular n-dopants suitable for materials with low electron affinit

274 ivity is attributed to the extra graphitic N dopants surrounding the CoN(4) moieties.

275 istently reveal that randomly distributed Mg dopants tend to segregate into the Na-layer during high-

276 -dimensional epsilon-near-zero medium act as dopants that modify the medium's effective permeability

277 Using NH(3) and CHCl(3) dopants, the amount of CA in fresh lemon juice was deter

278 Compared to carboxyl dopants, the sulfoxide dopants further improved the elec

279 By eliminating additional ionic dopants, these findings open up the entire class of orga

280 Between the APPI dopants, THF-doping yielded spectra with more aliphatic-

281 Penning ionization of excess dopant to form radical dopant species, and subsequent ch

282 ed that mixed-valent Cu acts as an effective dopant to modulate the oxygen vacancy (V(O) ) concentrat

283 mercially available amine-based molecular de-dopants to achieve stable enhancement-mode OECTs is pres

284 tism (FM) in TMDs is by introducing magnetic dopants to form a dilute magnetic semiconductor.

285 new paradigm for using air-stable molecular dopants to improve conductivity in, and provide ohmic co

286 On addition of chiral dopants to the liquid crystal, the films exhibit optical

287 Active dopants travel uniformly in the system or co-localize at

288 Yet, the range of dopant types and concentrations remains limited for many

289 emonstrate the remarkable efficacy of Mn(II) dopants, used as endogenous polarization agents for MAS-

290 crystal mixed with a photo-responsive chiral dopant, we demonstrate light-activated deflector, lens,

291 ransition of VO(2), we exemplify that mobile dopants weakly coupled to the crystal lattice provide a

292 Tetravalent dopants were considered on both V and P sites in order t

293 This in turn implies that the dopants will behave differently is silicon-rich and germ

294 The use of benzene as a dopant with 2-butanone allowed one to see two ion peaks,

295 tch, which also promotes the reaction of the dopant with O(2) from the gas phase.

296 Hence, using dopants with appropriate basicity, we could suppress the

297 BPLC fabrication and the availability of azo-dopants with photosensitivity throughout the entire visi

298 routes based on refined starting powders and dopants, with innovative sintering protocols and associa

299 w that doping - in particular, clustering of dopants within conjugated polymer films - has a profound

300 the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn,