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1 electron mobility weighted by the density of electronic states).
2 structural evolution of CNCbl in the excited electronic state.
3 g reactions, suggesting they are of the same electronic state.
4 tic shielding around these molecules in each electronic state.
5  a material in a magnetic field reflects its electronic state.
6 osecond lifetime of the virtual intermediate electronic state.
7 ng an absence of interlayer coherency of the electronic state.
8 hat prevents deexcitation back to the ground electronic state.
9 tive to the broken inversion symmetry of the electronic state.
10 antum mechanical mixtures of vibrational and electronic states.
11 entrating on reactions which occur on ground electronic states.
12  different rules of aromaticity in different electronic states.
13 contributors in the photophysically relevant electronic states.
14 ral features to transitions between specific electronic states.
15 erted region is a consequence of delocalized electronic states.
16 ted by the symmetries of the nontrivial bulk electronic states.
17 ersections connecting the excited and ground electronic states.
18 ry, as long as one performs a sum over final electronic states.
19 urface states without interference from bulk electronic states.
20 tifying how quantum interactions modify bare electronic states.
21 on between oxygen 2p and transition metal 3d electronic states.
22 arious dissociation pathways along different electronic states.
23 at its surface may form two-dimensional (2D) electronic states.
24 ctrum that are associated with each of these electronic states.
25 ansient energy level matching among multiple electronic states.
26  reflect the discreteness of their localized electronic states.
27 s origin in vibronic coupling with low-lying electronic states.
28 sired to control the spin-splitting in their electronic states.
29 s of the ground and highly excited (Rydberg) electronic states.
30 oupling and formation of strongly correlated electronic states.
31 derstanding of molecular dynamics in excited electronic states.
32 try of the system and the nature of relevant electronic states.
33 taneously in a mixture of vibrational and/or electronic states.
34 mputational studies of defect structures and electronic states.
35 20 nm, indicating the formation of new mixed-electronic states.
36 f Ta electrons from the associated localised electronic states.
37 plicitly treating 252 vibrational modes on 5 electronic states.
38  text] and first-excited [Formula: see text] electronic states.
39 roperties and was isolated in five different electronic states.
40  lack of efficient active sites with desired electronic states.
41 ng environments mainly responsible for these electronic states.
42 bit nearly flat bands, leading to correlated electronic states.
43 e transfer (MLCT) character of the low-lying electronic states (641, 732, and 735 nm) observed for CP
44         An electric field induces spin-split electronic states, a semiconductor-metal phase transitio
45 ve hardware for obtaining ground and excited electronic states across a variety of small molecular sy
46  addition, the heterojunctions show distinct electronic states across the interface, as revealed by K
47 lations, we show that grain-boundary-induced electronic states act as acceptors, resulting in a negat
48 n strain fields, segregation of defects, and electronic states, adding a new dimension to understandi
49 ts on the evolution of the low-lying singlet electronic states along the OO bond suggest that SiH2OO
50 cal evolution of quantum discord between the electronic state and the vibrational degrees of freedom
51       The interplay and coupling between the electronic state and vibrational manifold is fundamental
52 the different routes available to tune their electronic states and active sites.
53         We discuss the generation of excited electronic states and electron-hole pairs (excitons) at
54  from its large energy window for Dirac-like electronic states and have been explored for application
55 ides, particularly on the formation of novel electronic states and manifested metal-insulator transit
56 tonation opens up a pathway to explore novel electronic states and material functionalities in proton
57 , delocatization properties of participating electronic states and non-adiabatic coupling strengths.
58 ntronic manipulation of magnetic topological electronic states and pathways to realizing further high
59 o prepare lattice band populations, internal electronic states and quasi-momenta, and to produce spin
60 es facilitate engineering of polariton based electronic states and sensing elements for diagnostics a
61 rly complete band gap between full and empty electronic states and stable compounds; we can thus pres
62  do not show instability in their respective electronic states and that the higher energy configurati
63 iffer in how they access the vibrational and electronic states and the frequency of their output sign
64 ed states report on the interactions between electronic states and their environment.
65 ound, direct experimental probes of relevant electronic states and their hybridization are limited.
66          In the present paper, the nature of electronic states and transport properties of nanostruct
67 erties of MHPs, including crystal structure, electronic states, and charge transport, is provided fir
68  a transient close to a picosecond (ps), new electronic states appear in the O K-edge x-ray absorptio
69                               Highly excited electronic states are challenging to explore experimenta
70        In polyatomic molecules, however, the electronic states are closer together, leading to more c
71         Moreover, strongly anisotropic or 1D electronic states are formed in Pb films as modulated by
72                              Their low-lying electronic states are key to their remarkable reactivity
73 copically coexisting itinerant and localized electronic states are natural candidates for the pairing
74 suggestion that chemically generated excited electronic states are relevant to mammalian biology.
75 nterlayer thermal transport, even though all electronic states are strongly confined within individua
76                                      Unusual electronic states arise at ferroelectric domain walls du
77 itive charge states in dramatically distinct electronic states around the Fermi energy and formation
78 r2 IrO4 induces distinct 1D quantum-confined electronic states, as observed from optical spectroscopy
79 pectra of an essentially unexplored class of electronic states associated with double inner-shell vac
80 nal boundary is expected to possess peculiar electronic states associated with edge states of graphen
81 ization promoted by easy access to different electronic states at a narrow energy range, correspondin
82 femtosecond control of spin-polarization for electronic states at around the Dirac cone.
83                                              Electronic states at domain walls in bilayer graphene ar
84 th coexisting Dirac-fermions and pseudogaped electronic states at low energies.
85 ntum dots (CQDs) feature a low degeneracy of electronic states at the band edges compared with the co
86 ) structure, with a linear dispersion of the electronic states at the corners of the Brillouin zone (
87                       The ability to control electronic states at the nanoscale has contributed to ou
88 cally, the voltage changes the nature of the electronic states away from being sharply localized so t
89  new approach for tuning the energies of the electronic states based on the unusual strength of the C
90   Upon photoexcitation to the higher singlet electronic state (Bb) the structure of tryptophan is dis
91 l points due to the decreasing occupation of electronic states below the Fermi level (EF) with increa
92  decompose the spectra into contributions of electronic state blocking and photo-induced band shifts
93 ed class of materials having insulating bulk electronic states but conducting boundary states disting
94 in-polarized hybridization between 5f and 6d electronic states by means of X-ray magnetic circular di
95              This dramatic switch in favored electronic states can be ascribed to changes in ring aro
96 unique Hubbard systems(7-9) whose correlated electronic states can be detected and manipulated optica
97 rtheless, understanding how their correlated electronic states can be manipulated at the nanoscale re
98 -femtosecond-laser-excited coherence between electronic states can switch magnetic order by 'suddenly
99 nce of quasicrystalline order, the ways that electronic states change remain a mystery.
100                                              Electronic state changes (S(1)->S(0) internal conversion
101  Fe-based moieties experience structural and electronic-state changes.
102 re the [Fe{H2 B(pz)2 }2 (bipy)] moiety to an electronic state characteristic of the high spin state a
103                    The model consists of six electronic states characterized by the number of electro
104  detailed origins of photocurrent generating electronic state coherence pathways.
105 determined by complex dynamics involving key electronic states coupled to particular nuclear motions.
106 osphorus, arising from the strong interlayer electronic-state coupling.
107 g ponderomotive interaction, dressing of the electronic states, creation of coherent phonon pairs, an
108 ected to be operative in molecules where the electronic states densely fill a wide energy window (on
109  to highly coherent domains with delocalized electronic states displaying metallic behavior.
110                              Two-dimensional electronic states due to the quantization along surface
111 lthough the relaxation from the photoexcited electronic state during the ring-opening has been invest
112                                          New electronic states emerge as a result of multiple copies
113  the population dynamics associated with the electronic-state evolution of the system.
114         The twist angle strongly affects the electronic states, excitons and phonons of the twisted s
115  Theorists have recently proposed that novel electronic states exist at these boundaries, but very li
116                               The identified electronic states explain the formation of the very larg
117 porphyrins, relaxes rapidly through multiple electronic states following an initial porphyrin-based e
118 he highest occupied orbital, and the adopted electronic state for reactive intermediates.
119 gh energy gap between the empty and occupied electronic states for both dendrite-free plating of a li
120 ysical properties of silicon provide surface electronic states for dynamic nuclear polarization, extr
121         We study highly excited diskoid-like electronic states formed in the vicinity of charged and
122                                  The unusual electronic states found in topological materials can ena
123 matrix formalism is presented to extract the electronic states from a dataset measured with the monit
124 iding a possible route to obtaining metallic electronic states from the parent insulating states in t
125 tical and experimental studies of the ground electronic state (GES), redox potentials, and C-H aminat
126 scale of the fluctuations of the energies of electronic states has a significant impact on the proper
127 roscopy, one of the most sensitive probes of electronic states, has been mainly limited to ex situ ex
128  state vibronic couplings involving multiple electronic states, high-frequency vibrations, and low-fr
129       We report the observation of a related electronic state in a noncuprate material, strontium iri
130 t the observation of a long-lived metastable electronic state in an HCI by measuring the mass differe
131 al conductivities to probe the nature of the electronic state in PrBa(2)Cu(4)O(8) as a function of te
132 ere, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andree
133 le spectral function measures the density of electronic states in a material as a function of both mo
134 nfluenced by the density and distribution of electronic states in band gap and architectures of the s
135              It has recently been shown that electronic states in bulk gapless HgCdTe offer another r
136 e been shown to generate unusual interfacial electronic states in complex oxides.
137 n of a gate-controlled switching between two electronic states in Gd@C(82).
138 tructural quality can introduce well-defined electronic states in graphene and modify its electronic
139    The prediction of non-trivial topological electronic states in half-Heusler compounds makes these
140 rinciples modeling, we examine the nature of electronic states in HoSb.
141 yer separation is sufficient to decouple the electronic states in individual layers, leading to a tra
142 ns are key to stabilising a variety of novel electronic states in solids, from topological surface st
143 tice coupling, leading to a rich spectrum of electronic states in strongly correlated systems.
144                   Here we show that the bulk electronic states in such rhombohedral graphite are gapp
145 e the generation of highly desired localized electronic states in the 2D surface.
146 rallel to the surface respectively, and form electronic states in the band gap of SrTiO3.
147 d electronic decay via short-lived transient electronic states in the diiodomethane molecule, using a
148 ough point defects often induce only shallow electronic states in the perovskite bandgap that do not
149  follow the potential-dependent occupancy of electronic states in the polymer.
150 lly determine the time evolution of graphene electronic states in the presence of classically vibrati
151 c and nuclear structure for critical excited electronic states in the relaxation pathway characterize
152 tions show that the spatial distributions of electronic states in the system are similar in character
153  can be used to engineer strongly correlated electronic states in two-dimensional van der Waals heter
154 isted bilayer graphene exhibits a variety of electronic states, including correlated insulators(1-3),
155 ch as frontier orbital density take only the electronic state into account.
156 ssical model that classifies all the channel electronic states into four groups based on the sign of
157  define an experimental tool for identifying electronic states involved in spin-dependent exchange in
158 and determine the energy profiles of the two electronic states involved in the electron transfer (ET)
159 ible redox event that gives rise to a fourth electronic state is accessible through one-electron oxid
160 lue is only 0.10, suggesting that its ground electronic state is best described as a H2C=O(delta+)-O(
161                        The unique, transient electronic state is characterized by frequency-dependent
162                    The nature of the excited electronic state is identified with excellent spatial re
163 ution of nuclear wavepackets across multiple electronic states is a general means for studying the st
164 ndscape of the participating vibrational and electronic states is directly extracted from Wigner spec
165 rization time on acetylene dication in lower electronic states is not possible and point to misinterp
166 s have a strongly spin-orbital coupled (SOC) electronic state, J eff = (1/2), that defines the electr
167 of these materials, in which the topology of electronic states leads to robust surface states and ele
168  interfaces and address interactions between electronic states, local electromagnetic fields (tip-ind
169                         Here, we resolve the electronic states localized on domain walls in a Mott-ch
170 selection rules and appearance of low-energy electronic states localized on the acenes due to gradual
171                                        A two-electronic-state model was used to follow the dynamics,
172 ely studied, experimental work on the ground electronic state, most relevant to chemistry and biology
173  we visualized modulations in the density of electronic states N(r) within the halo surrounding Bi(2)
174 es and the characterization of four of their electronic states, namely 1) the ground state, 2) the ex
175 performed based on changes in the density of electronic states near the Fermi edge, which was used as
176 ensity, and consistent with the existence of electronic states near the spin-degenerate Dirac point o
177                        The singlet diradical electronic state of 2 is 10 kcal mol(-1) higher than the
178                            The nature of the electronic state of a metal depends strongly on its dime
179 ron-transfer theories is the coupling of the electronic state of a molecule to its structure.
180             Our results show that the ground electronic state of Fe(2+) at the critical pressure Pc o
181 onal potential energy surface for the ground electronic state of H2-CO with an estimated uncertainty
182 f NO2, which then recombines with the ground electronic state of IMD radical to form IMD-UR and N2O i
183 and the effects of compression on the ground electronic state of iron, electronic and magnetic states
184                     We propose that a narrow electronic state of significant oxygen 2p character near
185 olet absorption spectra for the lowest-lying electronic state of subcritical and supercritical water.
186 rily in terms of the local site geometry and electronic state of the Mn(III) ion, as best evidenced b
187 fferences in electron density in the excited electronic state of the molecule in comparison to the gr
188 mental limit (i.e. one unit-cell-thick), the electronic state of the SLs changed from a Mott insulato
189 opic and computational studies show that the electronic state of the {FeNO}(7) complex is best descri
190  density functional theory the structure and electronic state of three porphyrinic moieties, CoN4C12,
191 g across a heterogeneous energy barrier, via electronic states of alanine and tryptophan, and by rela
192 ultaneous mapping of unoccupied and occupied electronic states of atoms in a regime where the opacity
193 ystematically investigated and the ambipolar electronic states of Dirac fermions are essentially pres
194                                     Here the electronic states of Gd atom trapped in open Fe corrals
195 ximizing the influence of this effect on the electronic states of interest remains a challenge.
196            It is found that the magnetic and electronic states of LCO are linked intimately to the st
197  of the EDLTs demonstrate that the ambipolar electronic states of massless Dirac fermions with a high
198  the nearly localized nature of the relevant electronic states of MATBG, produces spectroscopic featu
199  can be a promising approach to engineer new electronic states of matter.
200 s are the result of a large diversity of the electronic states of metal oxides.
201 ic dynamics simulations to study the excited electronic states of model amyloid-like peptides.
202 PE spectrum for formation of the four lowest electronic states of neutral MBQ from the (2)A2 state of
203 demonstrate that it is possible to alter the electronic states of non-ferromagnetic materials, such a
204 d here provide a unique insight into how the electronic states of oxyluciferin are altered by microen
205  weak van der Waals interlayer coupling, the electronic states of participating materials remain larg
206 pecific chemical reactions by modulating the electronic states of PLP through distinct active site en
207  promote various reactions by modulating the electronic states of PLP through weak interactions in th
208 the two-dimensional nature of the conducting electronic states of SmB6.
209 transition-dipole moments between the lowest electronic states of the cation as a function of the rea
210 roperties of these complexes, excited by the electronic states of the chromophoric ligands, showed th
211 tal results and add insight into the various electronic states of the complex.
212 d/itinerant duality underlies the correlated electronic states of the high-Tc cuprate superconductors
213 -range migration of a hole through low-lying electronic states of the nucleobases.
214                  We report on the low-energy electronic states of the P-cluster in three oxidation st
215  surface and does not interact with the core electronic states of the QD.
216 electron spectroscopy to probe the first two electronic states of the radical cation, and resolve the
217 l potential of the electrons and perturb the electronic states of the reactants because of hybridizat
218 duction and phonon transport associated with electronic states of the rigid sulfur sublattice and sof
219 o differences in the electron density of the electronic states of the structurally different BODIPY c
220 l for the description of the coupling of the electronic states of the system to an external environme
221 "fingerprints" which are reproduced in other electronic states of the two molecules and allow classif
222 e is known about the interaction between the electronic states of these layered systems.
223 on and circular dichroism spectra to excited electronic states of this class of thiahelicene phosphor
224                   However, investigating the electronic states of TI NWs is complicated, due to their
225                Conical intersections between electronic states often dictate the chemistry of photoex
226 iguously show that we can switch the excited electronic state on attosecond timescales, coherently gu
227      These are regions of degeneracy between electronic states on the nuclear landscape of molecules
228 dictable, the consequences of these modified electronic states on the spectroscopy of molecules has r
229 ating of individual molecules with localized electronic states on the surface of a locally reactive 2
230 g nanomaterials can be tuned to couple other electronic states on the surface such as excitations of
231 epend on transition metal d-electron-derived electronic states, on which the vast majority of attenti
232 lapping orbitals reveals two types of nested electronic states, one involving excitations of the meta
233 d II-VI nanostructures, introducing intragap electronic states optically coupled to the host conducti
234 ing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an e
235 edient structures in which the two competing electronic states originate from separate structural com
236 rprisingly, the role in superconductivity of electronic states originating from simple free surfaces
237 y vortex bound states or in the continuum of electronic states outside the superconducting gap.
238 superconductivity below this temperature for electronic states predominantly in the CuO2 plane.
239 The controllability over strongly correlated electronic states promises unique electronic devices.
240 reen fluorescent protein to study its ground-electronic-state proton-transport kinetics, revealing a
241 nal states provide spectral selectivity, and electronic states provide large signal enhancements.
242 d modification of thermally activated ground electronic state reactions under VSC.
243 t 1 is the first silylene to exhibit triplet electronic state reactivity.
244 tacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individ
245 mensurate/commensurate phases and associated electronic states remains enigmatic.
246 y through the in-plane d orbitals, localized electronic states resembling those of the free molecule
247 tate of MBQ, followed by the (1)B2 and (1)A1 electronic states, respectively 9.0 +/- 0.2 and 16.6 +/-
248 ent filament and to a renormalization of the electronic states responsible for transport.
249 on suggests the presence of highly localized electronic states resulting in reasonably fast PL decays
250 s flat electronic bands and highly localized electronic states, resulting in Mott insulating behaviou
251                                          The electronic state-sensitivity of the technique allows for
252  spectra of detachment to the radical ground electronic states show detailed structure, allowing assi
253                              Remarkably, its electronic state shows distinct Landau quantization on a
254 ve been used to probe the ground and excited electronic state structures of the dimer and radical pai
255 ariation of control parameters offers exotic electronic states such as anomalous and possibly high-tr
256    Strong spin-orbit coupling fosters exotic electronic states such as topological insulators and sup
257 cules allow for the unambiguous detection of electronic state-switching at a conical intersection.
258      The results show how differences in the electronic state-switching of the wave packet in i-C(3)H
259 n boundaries and the presence of a localized electronic state that acts like a barrier for exciton di
260 hen the metallic regime was tuned towards an electronic state that hosts unconventional superconducti
261 superconductivity in cuprates arises from an electronic state that remains poorly understood.
262  exciton wave functions into the interfacial electronic states that are formed from interaction of th
263 egments, we demonstrate the formation of new electronic states that are not simply additive responses
264  of diatomic molecules, which typically have electronic states that are relatively well separated in
265 itons to a high-energy manifold of fullerene electronic states that enables efficient charge generati
266 l to resolve the contributions of the chiral electronic states that have a phase difference between t
267 /dielectric interfaces, leading to localized electronic states that serve as a basis for electrically
268 y, layer uniformity, interface stability and electronic states that severely complicate fabrication a
269                            Due to a specific electronic state, the lattice undergoes a reversible non
270  an important role in the materials' unusual electronic states, the nature of these fluctuations and
271  quality of their surfaces, and the pristine electronic states they host.
272 new approach capable of measuring insulating electronic states through their back action on nanomecha
273  results in quasi-one dimensional (1D) Dirac electronic states throughout the SBZ that we argue are i
274 states transfers a discrete-variable unknown electronic state to a continuous-variable photonic cat s
275 ions and to explore the contribution of each electronic state to the ETPA process.
276 he reduced model that shows almost identical electronic states to 32 free electrons in a jellium box.
277 s correlated with coherent superpositions of electronic states to initiate local ferromagnetic correl
278 nic decay from the initial optically excited electronic state towards the high spin state is distingu
279 ge transport measurement results indicate an electronic state transition happening simultaneously wit
280                   Here the observation of an electronic state transition in highly crystalline antife
281 surface hydrogen effect to modulate the pure electronic-state transition in perovskite Ca0.9 Yb0.1 Mn
282 ribe ultrafast proton transfer in the ground electronic state triggered by the use of shock waves cre
283 nstrating the formation of an incompressible electronic state under these resonant excitation conditi
284 ges in the frameworks' steric confinement or electronic state upon the recognition of small molecule
285  these systems' potential of realizing novel electronic states upon carrier doping.
286 e (CS(2)) in the [Formula: see text] excited electronic state using laser-induced electron diffractio
287                      Energetically low-lying electronic states were measured for different isotopical
288 nductivity is optimized by tailoring the key electronic state, which is not disturbed by further modi
289 radical, singlet (formally Ti(III) enolates) electronic states, whose origin is to be basically found
290 ence for electronic nematicity, a correlated electronic state with broken rotational symmetry, has be
291 on features allow us to identify a precursor electronic state with charge-transfer (CT) character tha
292 fect led to the realization of a topological electronic state with dissipationless currents circulati
293 ct both quantum amplitudes and phases of the electronic states with a resolution of ~100 attoseconds.
294 n attributed to competing but never-observed electronic states with different bonding properties simi
295 odified by the site-dependent spin mixing of electronic states with different relative canting angles
296 ese molecular metals have sparsely organized electronic states with distinctive visible and near-infr
297 onetheless, because certain SiC defects have electronic states with sharp optical and spin transition
298 ity of domain wall electronic properties.The electronic states within domain walls in an interacting
299                                     However, electronic states within domain walls themselves have no
300         We find emergent interface-localized electronic states within the bulk band gap of the graphe

 
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