ライフサイエンスコーパス: epitaxial

1 t the spin-coated films in our study are not epitaxial.

2 provides a path to large-scale synthesis of epitaxial ABC-TLG and other vdW materials.

3 n a gateable InGaAs/InAs 2DEG with patterned epitaxial Al, yielding devices with atomically pristine

4 Strong epitaxial alignment of PbI(2) monolayers with the underl

5 n enhancement in emission after growth of an epitaxial AlN passivation layer.

6 in as high as 2.4 per cent is applied to the epitaxial alpha-FAPbI(3) thin film.

7 frequency in indium arsenide nanowires with epitaxial aluminium shells.

8 pectroscopy in an InAs nanowire segment with epitaxial aluminium, which forms a proximity-induced sup

9 Epitaxial aluminum films with superb crystallinity, high

10 using aluminum flux contain co-crystallized, epitaxial aluminum.

11 Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directl

12 Toward wafer-scale epitaxial and grain boundary-free film is grown with alk

13 tial industrial application both on standard epitaxial and patterned surface sapphire substrates.

14 ate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe

15 microscopy under ambient conditions, a clear epitaxial arrangement despite the intrinsically distinct

16 Epitaxial attachment of quantum dots into ordered superl

17 magnetic field of 3 kOe, indicating that the epitaxial BaM films with strong self-biased behaviors ha

18 of amorphous silicon (a-Si) waveguides on an epitaxial barium titanate (BaTiO3, BTO) thin film.

19 The fabrication of epitaxial beta-Ga(2)O(3) thin films is challenging on fl

20 using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry stru

21 Depending on the substrate, the role of soft epitaxial binding mechanisms, ion pairing, hydrogen bond

22 The epitaxial Ca2IrO4 thin-films are of K2NiF4-type tetragon

23 re used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films.

24 above, the interfacial bi-layer enables the epitaxial connection of the two materials despite their

25 lculations also show that improvement of the epitaxial connections will lead to completely delocalize

26 blocks), but missing a fraction (20%) of the epitaxial connections.

27 aces) and the elastic energy associated with epitaxial constraints and domain formation.

28 Here, by varying epitaxial constraints, we discover room-temperature pola

29 he amount of power before failure than their epitaxial counterparts.

30 islocation-mediated stress relaxation during epitaxial crystal growth comes from the study of inorgan

31 se favors self-nucleation that competes with epitaxial crystallization from seed termini.

32 It is found that pure, epitaxial Cu2O phase without any trace of CuO phase is o

33 Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical p

34 The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 +/- 1 muO

35 reon have not been studied for the growth of epitaxial delafossites.

36 -x)Se alloy cores red shifted to the SWIR by epitaxial deposition of thin Hg(x)Cd(1-x)S shells with a

37 ng different semiconductor materials into an epitaxial device structure offers additional degrees of

38 had occurred on the mineral surface and that epitaxial distortion previously observed for Pu(IV) sorp

39 nt metal-insulator transition is observed in epitaxial double perovskite LaBaCo2O5.5+delta films.

40 and electrochemical criteria for reversible epitaxial electrodeposition of metals are defined and th

41 cturally elaborated post assembly by in situ epitaxial elongation of the membrane building blocks to

42 ometric frustration, lattice distortions and epitaxial engineering.

43 This strategy is enabled by epitaxial Fe(0.52) Rh(0.48) thin films designed so that

44 this coupling on the lithiation kinetics in epitaxial Fe3 O4 thin film on a Nb-doped SrTiO3 substrat

45 The ultraflexible epitaxial ferroelectric membranes could enable many appl

46 ,Nb,Ti)O3 substrate intimately coupled to an epitaxial ferromagnetic (La,Sr)MnO3 film, electric field

47 a robust orbital two-channel Kondo effect in epitaxial ferromagnetic L1(0)-MnAl films, as evidenced b

48 Fabrication of epitaxial FeSexTe1-x thin films using pulsed laser depos

49 s the difficulty in growing a single-crystal epitaxial film of cuprous halides.

50 omic and dislocation structure of the remote epitaxial film.

51 in can manipulate the physical properties of epitaxial films and help understand the physical nature

52 ce only in single crystal magnetite or thick epitaxial films at low temperatures.

53 Remarkably, the Co25Fe75 epitaxial films exhibit a damping constant <1.4 x 10(-3)

54 Epitaxial films exhibited 3D growth on sapphire and 2D s

55 Epitaxial films may be released from growth substrates a

56 The transition temperatures of epitaxial films of Fe(Te0:9Se0:1) are remarkably insensi

57 We show that epitaxial films of inorganic materials such as cesium le

58 s between polar structures and properties in epitaxial films of the prototypical relaxor ferroelectri

59 Epitaxial films of the pyrochlore Nd2Ir2O7 have been gro

60 and chemically incompatible substrates, but epitaxial films of transition metal perovskite oxides ha

61 of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-

62 authors achieve low magnetic damping in CoFe epitaxial films which is comparable to conventional insu

63 Here, we report the growth of Co25Fe75 epitaxial films with excellent crystalline quality evide

64 For epitaxial films, a critical thickness (tc) can create a

65 nd states and associated phase transition in epitaxial films.

66 t of microelectronic technologies relying on epitaxial films.

67 ture of complex materials is illustrated for epitaxial [Formula: see text] on intrinsic Si(001).

68 Epitaxial galfenol, an alloy of iron and gallium, has be

69 stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited.

70 Deposition of epitaxial germanium (Ge) thin films on silicon (Si) wafe

71 A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of

72 demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifyi

73 , thus providing a guide towards engineering epitaxial graphene for applications such as quantum metr

74 Epitaxial graphene has proven itself to be the best cand

75 deposited graphene rather than exfoliated or epitaxial graphene is used, because layer transfer metho

76 , monolayer and few-layer WS(2) was grown on epitaxial graphene on SiC by sulfurization of WO(3-x) th

77 due to quantum confinement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily hig

78 harge carrier type, density, and mobility in epitaxial graphene on silicon-face silicon carbide.

79 t measurements of the quantum Hall effect in epitaxial graphene showing the widest quantum Hall plate

80 vestigate the effects of cyclically exposing epitaxial graphene to controlled inert gases and ambient

81 as a result of charge transfer from MoS2 to epitaxial graphene under illumination.

82 e to the weak van der Waals interaction with epitaxial graphene.

83 capsulated growth (MEEG) technique utilizing epitaxial graphene.

84 of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC.

85 Near-atomically sharp interfaces and epitaxial growth are revealed by low-dose aberration-cor

86 misorientations and maintain the coherently epitaxial growth between the TiN nanocrystallites and in

87 The composition of this epitaxial growth can be varied from CdSe to ZnSe, depend

88 ce applications, it is essential to optimize epitaxial growth for the precise control of nanowire geo

89 Using epitaxial growth in an alcoholic solvent, we show exquis

90 hydrogel was obtained as a result of living epitaxial growth in aqueous solvent and cell culture med

91 Furthermore, for the first time, we report epitaxial growth in aqueous solvent, achieving precise c

92 m(2)) single-crystal substrates, and confirm epitaxial growth in the <100>, <111>, and <751> orientat

93 principles calculations, suggesting that the epitaxial growth is enhanced by lateral docking of hBN t

94 While the continuous epitaxial growth is responsible for slender columnar gra

95 provides an appealing material basis for the epitaxial growth of 2D materials, and the applications t

96 sed growth conditions leading to anisotropic epitaxial growth of 2D zeolites with rates as low as few

97 Finally, we demonstrate epitaxial growth of a mixed wurtzite-rocksalt MgSnN(2) o

98 intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-ph

99 Interestingly, we find that epitaxial growth of alpha1A/betaIII microtubules from he

100 e and charge state of color centers based on epitaxial growth of an inorganic passivation layer is pr

101 nce and for device miniaturization. However, epitaxial growth of atomically sharp heterostructures of

102 ing to investigate a contrasting system, the epitaxial growth of calcite (CaCO3) crystals on organic

103 d nanorods in Zn oleate solution can lead to epitaxial growth of CdSe particles rather than the expec

104 However, in situ epitaxial growth of dissimilar van der Waals materials r

105 ed by using GQDs as seed nucleations for the epitaxial growth of h-BN along the edges of GQDs without

106 Here we report the strained epitaxial growth of halide perovskite single-crystal thi

107 We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride

108 High-quality epitaxial growth of inter-metallic MnPt films on oxides

109 Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilay

110 r-by-layer growth model commonly observed in epitaxial growth of metal films, featured by repeated nu

111 Epitaxial growth of NaCl on NaCl (001) is explored as a

112 s to the sub-phase metal ions and guides the epitaxial growth of nanosheets.

113 is well known to serve as the substrate for epitaxial growth of other functional oxide layers.

114 particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new direc

115 arching suitable substrates for the directly epitaxial growth of phosphorene.

116 Epitaxial growth of Pt clusters and the consequent stron

117 Nonetheless, here we report the successful epitaxial growth of single-crystal hBN monolayers on a C

118 ) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the

119 During epitaxial growth of the AlInN layer, an AlInN shell is s

120 The epitaxial growth of the BaM film on sapphire was reveale

121 raction (XRD) results demonstrate phase-pure epitaxial growth of the pyrochlore films on YSZ.

122 The key is the epitaxial growth of water-soluble Sr 3Al 2O 6 on perovsk

123 whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free t

124 ion, hydrothermal reaction, and Van Der Waal epitaxial growth on the substrate.

125 cale heterostructures through solution-phase epitaxial growth on the tips of rutile TiO2 nanorods.

126 Here, inspiration is drawn from epitaxial growth strategies in atomic crystallization, a

127 In this work, we introduce an epitaxial growth strategy to accomplish the efficient in

128 patterned and unpatterned sapphire) from the epitaxial growth to device performance and thermal dissi

129 tial field of many substrates, which enables epitaxial growth to occur despite its presence.

130 ficult to simultaneously realize defect-free epitaxial growth while fine tuning the chemical composit

131 s of micro-structured substrate for low cost epitaxial growth, active planar devices, etc.

132 In epitaxial growth, the stability of nanoscale cluster or

133 Material integration strategies, such as epitaxial growth, usually involve strong chemical bonds

134 operties are only realized with high quality epitaxial growth, which limits substrate choice and thus

135 , thus enabling highly robust block-by-block epitaxial growth.

136 nd functionalities not achievable via direct epitaxial growth.

137 as transparent electrodes and substrate for epitaxial growth.

138 t in the lattice planes that increases after epitaxial growth.

139 report a solution-based lithography-assisted epitaxial-growth-and-transfer method for fabricating sin

140 e of 3.0-3.3 MV/cm, which indicates that the epitaxial h-BN film has good insulating characteristics.

141 bstrates coated with graphene, we synthesize epitaxial halide perovskite with controlled dislocation

142 Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom elec

143 ructure manipulation of the exchange bias in epitaxial hcp Cr2O3 films.

144 Ti(0.8)O(3) (BZT)/Ba(0.7)Ca(0.3)TiO(3) (BCT) epitaxial heterostructures and studied their structural,

145 Epitaxial heterostructures based on oxide perovskites an

146 The BZT/BCT epitaxial heterostructures were grown on SrRuO(3) (SRO)

147 emonstrate highly stable and tunable lateral epitaxial heterostructures, multiheterostructures and su

148 ctric coupling compares well with respect to epitaxial heterostructures, where the epitaxy responsibl

149 ate such a system by patterning an elongated epitaxial InAs-Al island embedded in an Aharonov-Bohm in

150 Epitaxial indium tin oxide films have been grown on both

151 These results demonstrate that epitaxial inorganic passivation of defect-based quantum

152 al and electronic processes occurring at the epitaxial interface and at the surface.

153 l layer as high as 10(8) N/m(2) owing to the epitaxial interface between the electrostrictive and mem

154 Atomically sharp epitaxial interfaces are necessary to improve performanc

155 roactive substrates to impart strain via non-epitaxial interfaces.

156 cal gap energies of both polycrystalline and epitaxial ITO thin films decrease with increasing temper

157 Comparing with previous reports on epitaxial KNN films, we find our samples to be of very h

158 wth and the intriguing transport behavior of epitaxial L21-Co2MnAl films, which exhibit a low-tempera

159 od has been used to fabricate self-assembled epitaxial La0.67Ca0.33MnO3:NiO and La0.67Ca0.33MnO3:Co3O

160 urements of the magnetocapacitance effect in epitaxial La0.7Sr0.3MnO3/Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3

161 as (2DEG) is formed at the interface between epitaxial LaFeO3 layers >3 unit cells thick and the surf

162 tical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates

163 ng NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth techniques.

164 with tunable anion-vacancy patterns through epitaxial lattice strain.

165 After epitaxial layer growth, the LPC variation across the waf

166 he top 6 microns of the wafer increase after epitaxial layer growth.

167 x 10(17) and 4 x 10(14) cm(-3) n-type doped epitaxial layer.

168 The c-plane of the Al(x)Ga(1-x)N epitaxial layers exhibits compressive strain, while the

169 Mg-doped GaN cubic epitaxial layers grown under optimized conditions show a

170 strain on the optical phonon energies of the epitaxial layers is also discussed.

171 The bandgap of the epitaxial layers is slightly lower than predicted value

172 By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are

173 ent thermal expansion coefficients cause the epitaxial layers to have low quality.

174 lipsometry measurements on GaP(1-x)Bi(x)/GaP epitaxial layers up to x = 3.7% we observe a giant bowin

175 conventional homoepitaxy forms high-quality epitaxial layers(1-5), the limited set of material syste

176 orientation, registry and dimensions of the epitaxial layers.

177 ructure consisting of ultra-thin III-Nitride epitaxial layers.

178 oduce a simple and inexpensive procedure for epitaxial lift-off of wafer-size flexible and transparen

179 d nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystall

180 rom both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infra

181 We report an epitaxial mechanism to regulate nucleation, growth, and

182 Besides epitaxial mismatch that can be accommodated by lattice d

183 We demonstrate that epitaxial Mn(3)GaN/permalloy heterostructures can genera

184 monstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of comm

185 report on spin transport in state-of-the-art epitaxial monolayer graphene based 2D-magnetic tunnel ju

186 The epitaxial MoS2 crystals can be tailored from compact tri

187 ural perfection and enables the synthesis of epitaxial nano-heterostructures of unprecedented complex

188 ng microscopy (STM) studies for supported 2D epitaxial nanoclusters and developments in modeling for

189 ork has resulted in the discovery of a novel epitaxial nanocomposite phase-change memory material.

190 ix material, illustrating the versatility of epitaxial nanocomposites for strain engineering.

191 Growth of epitaxial nanocomposites using lattice-mismatched consti

192 The epitaxial nature of the growth processes used for the cr

193 The epitaxial nature, low strain character, and crystallogra

194 rained domains is proposed to understand the epitaxial nature.

195 , magnetotransport anomalies in high-quality epitaxial NiCo(2) O(4) thin films resulting from the com

196 The silicone matrix immobilizes the epitaxial nucleation sites through self-templated caviti

197 e substrate temperature necessary to achieve epitaxial orientation, with temperature reduction from 6

198 l supracrystals through superlattice-matched epitaxial overgrowth along the existing colloidosomes.

199 The epitaxial overgrowth of a gold shell with a few atomic l

200 y growth and embedded into the epilayer, via epitaxial overgrowth.

201 sical/chemical properties in strain-released epitaxial oxide films by using electroactive substrates

202 In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfect

203 n electrostrictive FET device, involving the epitaxial oxide heterostructure as an ideal material pla

204 The dependence of the SBH of epitaxial Pb-Si(111) on its reconstruction is also cover

205 The bubble domains appear in ultrathin epitaxial PbZr0.2 Ti0.8 O3 /SrTiO3 /PbZr0.2 Ti0.8 O3 fer

206 hat controlled insertion of He atoms into an epitaxial perovskite film can be used to finely tune the

207 tem is demonstrated in atomically controlled epitaxial perovskite heterostructures.

208 2DC/Au films on SiO(2) results in a reverse epitaxial process where initially nanocrystalline Au fil

209 Epitaxial quantum dots (QDs) have long been identified a

210 Although intersubband absorption in epitaxial quantum wells is well-known, analogous observa

211 We show that epitaxial rare-earth iron garnet films with perpendicula

212 stablish that adatoms will experience remote epitaxial registry with a substrate through a substrate-

213 ay reflectivity measurements showed no clear epitaxial relation of cerussite to the calcite (104) sur

214 the importance of: (1) identification of the epitaxial relationship between BFO and its substrate mat

215 This orientation is often attributed to an epitaxial relationship between the HAp and collagen mole

216 The epitaxial relationship between the YSZ and Nd2Ir2O7 is o

217 aplace pressure in the nanoparticles and the epitaxial relationship of this phase to the substrate.

218 Good epitaxial relationships of FePt (001) <100>//ZrN (001) <

219 urface reconditioning strategy termed ERASE (Epitaxial Removal Aided by Strand Exchange) that allows

220 the formation of nanostructures in different epitaxial semiconductor systems we expect that the obser

221 anthanide-doped nanocrystals, and that inert epitaxial shell growth can overcome concentration quench

222 We show that after an inert epitaxial shell growth, erbium (Er(3+)) concentrations a

223 from an as-deposited disordered layer to an epitaxial silicide layer at the temperature of ~290 degr

224 er propagation distance can be achieved with epitaxial silver at low temperature.

225 that this amount of strain can be induced in epitaxial SmB6 films via substrate in potential device a

226 Here, magnetically soft epitaxial spinel NiZnAl-ferrite thin films with an unusu

227 achieve the adsorption-controlled growth of epitaxial Sr(3) SnO single-crystal films by molecular-be

228 We then realize epitaxial (SrFeO2.5)1/(CaFeO2.5)1 thin film superlattice

229 We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show

230 Epitaxial SrVO(3) films are topochemically converted to

231 3) phase owing to the synergistic effects of epitaxial stabilization and strain neutralization.

232 Our results suggest that the epitaxial stabilization growth of metastable-phase thin-

233 In this study, we report the epitaxial stabilization of a new interfacial phase forme

234 Here, we report epitaxial stabilization of the VO2 polymorphs to synthes

235 to these local pressures, an effect we term epitaxial stabilization.

236 f Mn-Si and Mn-N domains, an effect known as epitaxial stabilization.

237 nd, theoretically, to be ferroelectric under epitaxial strain becoming a promising alternative to con

238 Epitaxial strain can induce collective phenomena and new

239 Here, we apply epitaxial strain engineering to tune the optical respons

240 ed strontium cobaltite (SrCoOx) to show that epitaxial strain is a powerful tool for manipulating the

241 s which are not available otherwise, because epitaxial strain is avoided.

242 Despite extensive studies on the effects of epitaxial strain on the evolution of the lattice and pro

243 By utilizing epitaxial strain, a rich set of ferroelastic polydomain

244 esults exclude charge transfer, intermixing, epitaxial strain, and octahedral rotations/tilts as domi

245 ures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fi

246 ing, electric field magnitude and direction, epitaxial strain, temperature and so on, which can facil

247 ctronic structure calculations, we show that epitaxial strain, which is ubiquitous in MeRAM heterostr

248 rticular morphology is driven by anisotropic epitaxial strain.

249 abilities, rejuvenated near the interface by epitaxial strain.

250 in population is elucidated as a function of epitaxial strain.

251 cs does not originate from the alteration of epitaxial strain; rather, it is correlated with the stru

252 red environment at each interface, caused by epitaxial strains, broken symmetry, off-stoichiometry an

253 The epitaxial strategy could be further applied to other 2D

254 Employing epitaxial stress on rutile [Formula: see text] substrate

255 train, which could provide high quality homo-epitaxial substrate.

256 Traditionally, closely lattice-matched epitaxial substrates have been required for the growth o

257 omparable quality to those directly grown on epitaxial substrates, and are mechanically flexible depe

258 o the absence of suitable lattice-mismatched epitaxial substrates.

259 ity of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface.

260 inhomogeneities are revealed to exist on the epitaxial surface for important optical parameters.

261 eristics, including (i) three types of novel epitaxial surface-protecting motifs; (ii) an unusual pla

262 zzling, when the substrate is clearly not an epitaxial template.

263 00) and (110) surface orientation for use as epitaxial templates for thin film photovoltaic devices.

264 e change doping in the monoclinic beta-Ga2O3 epitaxial thin film.

265 t's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferr

266 isfit dislocations generated in conventional epitaxial thin films and are suggested to form in respon

267 The epitaxial thin films are classified as dirty-limit super

268 ve ferroelastic domain switching in PbTiO(3) epitaxial thin films by tuning the misfit-strain to be n

269 e-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting

270 Here we report H c2 data for epitaxial thin films extracted from the electrical resis

271 the electronic structure evolution of SrFeOx epitaxial thin films is identified in real-time, during

272 s on structural and electrical properties in epitaxial thin films of SrFeO3-delta (SFO), where SFO is

273 Here we study epitaxial thin films of SrNbO3+delta and find that their

274 igh crystalline quality, highly oriented and epitaxial thin films of the lead-free (K0.5Na0.5)0.985La

275 on in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81G

276 ed-laser epitaxy of (0001)-oriented CuCrO(2) epitaxial thin films on Al(2)O(3) substrates.

277 MnAs epitaxial thin films on GaAs(001) single crystalline sub

278 Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating deposi

279 e-crystal fcc-Co(x)(Mg(y)Zn(1-y))(1-x)O(1-v) epitaxial thin films with high Co concentration up to x

280 The QCP behavior in LNO is manifested in epitaxial thin films with unprecedented high purities.

281 across the temperature-driven MIT in NdNiO3 epitaxial thin films.

282 eld in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films.

283 Here, using epitaxial thin-film growth, synchrotron radiation, imped

284 novel strain-stabilized isostructural VO(2) epitaxial thin-film system where the electrical transiti

285 opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which

286 ect-induced superconductivity was studied in epitaxial topological insulator Bi2Se3 thin films grown

287 plex oxide films onto silicon substrates, by epitaxial transfer at room temperature.

288 Epitaxial transparent oxide NixMg1-xO (0 </= x </= 1) th

289 is well-known, analogous observations in non-epitaxial two-dimensional materials are sparse.

290 Epitaxial ultrathin films are of utmost importance for s

291 an 100 nm) single crystal Cr(2)O(3) films on epitaxial V(2)O(3) buffered Al(2)O(3) (0001) single crys

292 Recently, epitaxial V(2)O(3) thin film electrodes have been used t

293 Although several epitaxial vdW heterostructures have been achieved experi

294 ing of the monoclinic phase in (10 +/- 1 nm) epitaxial VO(2) films due to bandgap changes throughout

295 that depositing a TiO(2) capping layer on an epitaxial VO(2) thin film can effectively reduce the res

296 semi-coherent interface with the strain-free epitaxial VO2(B) film above, the interfacial bi-layer en

297 Depending on the substrate, the lattice of epitaxial WO(3) expands or contracts as protons are inte

298 uctivity on point defects is demonstrated in epitaxial WO(3) thin films.

299 h temperature superconducting wires based on epitaxial Y(Dy)BCO film.

300 The resultant epitaxial Zn anodes achieve exceptional reversibility ov