ライフサイエンスコーパス: field effect

1 nges in the many-body correlations and local-field effect.

2 tically accounting for the external magnetic field effect.

3 lectrostatic interlayer screening and fringe field effects.

4 d become semiconducting, exhibiting electric field effect and photoconductivity.

5 oxides including discussions of the crystal field effect and the effects and trends in oxidation sta

6 the mechanisms underlying the bladder cancer field effect and tumor recurrence.

7 y and catalytic activation through competing field effects and resonance effects.

8 er semiconductors can simultaneously exhibit field-effect and electrochemical operation regimes, with

9 enced by magnetic fields, and these magnetic field effects are diverse.

10 modulations can only be unveiled when optic-field effects are enhanced by nonlocal image-dipole inte

11 Field Effect Biosensing (FEB) with monoclonal antibodies

12 echnology literature that techniques such as field effect biosensing are capable of rapid and flexibl

13 The dose-response behavior of the field-effect biosensor presents a linear range between 1

14 demonstrate that back gates and the ensuing field effect can be used to control kinetics of interfac

15 ition driven by the ponderomotive energy and field effects characteristic of the MIR wavelength regim

16 um anomalous Hall effect can be reversed via field-effect control of the chemical potential; moreover

17 report the steady state kinetic analysis of field-effect-controlled outer-sphere electrochemistry on

18 a working concept of a double layer graphene field effect device that utilizes a thin film of sputter

19 hoton detection(1) and sharp threshold swing field effect devices(2).

20 able candidate to be used as 2D material for field effect devices, photovoltaics, and photocatalysis.

21 o control the conductivity of graphene based field effect devices.

22 By electrostatic gating through CaHfO(3), field-effect devices are demonstrated using CaHfO(3)/SrT

23 jor challenge for conventional semiconductor field-effect devices towards clinical applications.

24 High mobility graphene field-effect devices, fabricated on the complex-oxide he

25 ly monitor the states of electrons in modern field-effect devices-for example, imaging local changes

26 ead that the entrainment occurs through weak field effects distant from the pacemaker, but which are

27 w using an array of alternating current (AC) field-effect electrodes, experimentally demonstrate the

28 The reusability of capacitive field-effect electrolyte-insulator-semiconductor (EIS) s

29 The field-effect electron mobility of aqueous solution-proce

30 ternative mechanism that leverages localized field-effect electroosmosis to create dynamic flow patte

31 Field-effect experiments on cuprates using ionic liquids

32 The results of field-effect experiments were supported by fluorescence-

33 olymers, PhF2,6 achieved the highest average field-effect hole mobility (5.1 cm(2) V(-1) s(-1)).

34 ize a giant enhancement of the ferroelectric field effect in a prototype Mott field-effect transistor

35 all transistors today relies on the electric-field effect in a semiconducting channel to tune its con

36 round-breaking demonstration of the electric field effect in graphene reported more than a decade ago

37 ther environmental exposure signatures and a field effect in NATs.

38 mical capacitive devices possessing specific field effect in which molecular moieties within films ac

39 Electric field effects in ferromagnetic metal/dielectric structur

40 PC diagnosis through detection of epigenetic field effects in histologically non-malignant prostate t

41 investigated if cancer-associated epigenetic field effects in histologically normal prostate tissue m

42 igate the radical-pair mechanism of magnetic-field effects in photochemical reactions, allowing model

43 able strategy to implement external electric-field effects in routinely used oxidative addition catal

44 nificant interactions between the target and field effects in the early (50-75 ms) portion of the lon

45 lity and electron charge density, similar to field-effect induced changes measured in electrical Hall

46 We manipulate the LDOS via field effect-induced optical permittivity modulation of

47 ed trend can be explained as a result of the field-effect-induced band alignment shift at the ZnO/ele

48 3)NH(3)), and 3D MAPbI(3) using the magnetic field effect (MFE) on conductivity and electroluminescen

49 ode (OLED) displays a sign reversal magnetic field effect (MFE) when the applied magnetic field range

50 By introducing Al2 O3 capping, carrier field effect mobilities (41 for holes and 80 cm(2) V(-1)

51 lectrolyte gate insulator enables remarkable field-effect mobilities exceeding 10 cm(2) V(-1) s(-1) f

52 Field effect mobility in an organic device is determined

53 d a 2-fold and 5-fold improvement of average field-effect mobility and performance consistency (defin

54 harge transport behavior, giving a p-channel field-effect mobility of 0.42 cm(2) V(-1) s(-1) and an o

55 The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm(2) V(-1) s(-1)

56 ld-effect transistors on textile, reaching a field-effect mobility of 91 cm(2) V(-1) s(-1), at low vo

57 arge carrier conduction with a high electron field-effect mobility of approximately 158 cm(2) V(-1) s

58 are extremely advantageous for improving the field-effect mobility of FETs compared to needle-like 1D

59 erent patients, revealed a molecular subtype field effect; multiple tumors had different mutations th

60 ing is determined by the differential ligand field effect of Cl(-) versus OH(-) on the Fe center.

61 eld peak results from a quasistatic magnetic-field effect of the RF radiation for periods comparable

62 Our results reveal beyond mean-field effects of exciton-polariton interactions and call

63 A pervasive magnetic field effect on an aromatic molecule is the aromatic rin

64 based cell counting were used to quantify DC field effects on the deposition of bacterial strains Pse

65 evidence that salt additives exert electric-field effects on the rate of cross-coupling reactions, a

66 highlight how understanding of the electric fields effect on the EAS reaction could lead to the form

67 ormance, physical limitations from nanoscale field-effect operation begin to cause undesirable curren

68 carboxylate correlates qualitatively to the field effect parameter (F(ortho)).

69 cell to just eight angstroms, using electric-field-effect passivation to enable the efficient energy

70 Miniaturized two-terminal field effect point sensors can also be fabricated, using

71 We confirm that the field effect present in these redox switches is suitable

72 The local-field effect results in an inhomogeneous charge distribu

73 The Field Effect sensors are broadly used for detecting vari

74 Furthermore, a "field-effect solar cell" is successfully developed and i

75 rdered by adjusting the gate voltage through field-effect traffic control.

76 Herein, we report an aptamer-based field effect transistor (aptaFET) biosensor, developed b

77 con nanowire (SiNW) is applied in biological field effect transistor (BioFET) system.

78 In this work, we developed a field effect transistor (FET) biosensor utilizing soluti

79 Field effect transistor (FET) biosensors based on low-di

80 ubstrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time

81 The monolayer MoS(2) field effect transistor (FET) exhibits photo-induced sho

82 trand displacement-based probe on a graphene field effect transistor (FET) for high-specificity, sing

83 MOSFET, strain is exerted to a bilayer MoS2 field effect transistor (FET) through deposition of a si

84 d system employs an aptameric graphene-based field effect transistor (GFET) using a buried-gate geome

85 nosensor based on antibody-modified graphene field effect transistor (GFET) was presented.

86 he sensor was fabricated as an ion-selective field effect transistor (ISFET) in order to be able to q

87 which the pH sensitivity of an Ion Sensitive Field Effect transistor (ISFET) sensor can be significan

88 tive surface of a conventional ion-selective field effect transistor (ISFET) with the afforded SAM re

89 Meanwhile, organic field effect transistor (OFET) mobility data showed the

90 t with the goal of favoring unipolar organic field effect transistor characteristics.

91 A new bioelectronic nose based on a field effect transistor coupled with an aptamer as the s

92 printable graphene-based electrochemical and field effect transistor sensors for some important analy

93 ived from standard metal oxide semiconductor field effect transistor technology and pave a way for pr

94 osensor, developed by using an extended gate field effect transistor with inter-digitated gold microe

95 ealization of highly sensitive and selective field effect transistor-type lactate biosensor.

96 and incorporated as the active material in a field effect transistor.

97 In particular, carbon nanotube field-effect transistor (CNFET)-based digital circuits p

98 ation of aripiprazole with the extended-gate field-effect transistor (EG-FET) chemosensor.

99 lasmon resonance (SPR) and electrolyte gated field-effect transistor (EG-FET) methods in a single ana

100 ognition unit with a sensitive extended-gate field-effect transistor (EG-FET) transducer leads to hig

101 An extended-gate field-effect transistor (EG-FET) was used as the transdu

102 operate an ultra-sensitive electrolyte-gated field-effect transistor (EGOFET) as a sensor and facilit

103 sensor based on an Electrolyte-Gated Organic Field-Effect Transistor (EGOFET) integrated with microfl

104 ed from that of an electrolyte-gated organic field-effect transistor (EGOFET) to that of an OECT by i

105 unosensor based on electrolyte-gated organic field-effect transistor (EGOFET) was developed for the d

106 rating a multigate electrolyte gated organic field-effect transistor (EGOFET) with a 6.5 muL microflu

107 sensitivity of the electrolyte-gated organic field-effect transistor (EGOFET).

108 films, batch fabrication of high-performance field-effect transistor (FET) arrays in wafer-scale is d

109 t the first use of an aptamer-functionalized field-effect transistor (FET) as a label-free sensor for

110 A black phosphorous (BP)-based field-effect transistor (FET) biosensor was fabricated b

111 Field-effect transistor (FET) is a very promising platfo

112 atable electronic antibiotic sensor based on field-effect transistor (FET) is reported.

113 Nanomaterial-based field-effect transistor (FET) sensors are capable of lab

114 In this review, different field-effect transistor (FET) structures and detection p

115 ced Raman scattering (SERS)-based biosensor, field-effect transistor (FET)-based biosensor, surface p

116 Field-effect transistor (FET)-based biosensors allow lab

117 ilized highly specific aptamer probes and 2) field-effect transistor (FET)-based sensor arrays.

118 The vision of silicon field-effect transistor (FET)-based sensors has been an

119 Ts surface for highly sensitive and specific field-effect transistor (FET)/chemiresistor (CR) biosens

120 single-walled carbon nanotubes (SWNTs) in a field-effect transistor (FET)/chemiresistor architecture

121 miconductor Manufacturing Company) 12 nm fin field-effect transistor (FinFET), 28 nm and 40 nm comple

122 is work presents a fully integrated graphene field-effect transistor (GFET) biosensor for the label-f

123 e accomplished via photogating of a graphene field-effect transistor (GFET) by carriers generated wit

124 Graphene field-effect transistor (GFET) sensors are an attractive

125 A graphene field-effect transistor (gFET) was non-covalently functi

126 er, another type of transistor, the junction field-effect transistor (JFET) is free of dielectric lay

127 reshold slope of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV dec(-1) at roo

128 f nanoscale sensors dubbed nanopore extended field-effect transistor (nexFET) that combine the advant

129 Organic field-effect transistor (OFET) measurements demonstrate

130 We study P3MEEMT-based OECT and organic field-effect transistor (OFET) performance as a function

131 e polymer were performed using a remote-gate field-effect transistor (RG FET) detection system that w

132 ding aptamer-modified silicon nanowire-based field-effect transistor (SiNW-FET) biosensor, with a det

133 Using a ubiquitous electronic device - the field-effect transistor - as a platform, colloidal nanom

134 etection approach on silicon nanowires-based field-effect transistor arrays, by creating a suitable '

135 icle analogues is demonstrated by a graphene field-effect transistor bioassay of small-molecule gluco

136 In this work, a field-effect transistor biosensor based on molybdenum di

137 te the successful fabrication of a promising field-effect transistor biosensor for EVD diagnosis.

138 A, which incorporates an amplifying nanowire field-effect transistor biosensor, is able to offer supe

139 rescence-based, nanomonitors, SPR-based, and field-effect transistor biosensors for early detection a

140 ron nitride/graphene) in a semifloating gate field-effect transistor configuration.

141 re, we present an atomic threshold-switching field-effect transistor constructed by integrating a met

142 ophenanthrothiophenes were used in p-channel field-effect transistor device fabrication, from which t

143 Single-crystal-based field-effect transistor devices of PBC exhibited efficie

144 with the trend in hole mobilities in organic field-effect transistor devices.

145 istic Dirac peaks for a single-gate graphene field-effect transistor embodiment that exhibits hole an

146 the first time in a three-terminal graphene field-effect transistor embodiment, we introduce a rapid

147 phase to a semiconducting MoTe(2) phase in a field-effect transistor geometry.

148 sotropy (VCMA) in Au/[DEME](+) [TFSI](-) /Co field-effect transistor heterostructures is addressed.

149 Microwave conductance and field-effect transistor measurements demonstrate that bo

150 further chemical treatment, as determined by field-effect transistor measurements.

151 ave developed a reduced graphene oxide-based field-effect transistor method for real-time detection o

152 transformation to realize scalable nanowire field-effect transistor probe arrays with controllable t

153 The conventional metal-oxide-semiconductor field-effect transistor requires sophisticated dielectri

154 ochemiluminescence, photoelectrochemical and field-effect transistor sensors.

155 order of 1-5 cm(2) V(-1) s(-1), supported by field-effect transistor studies of slightly doped sample

156 development and testing of a graphene-based field-effect transistor that uses clustered regularly in

157 ) in a microcavity-integrated light-emitting field-effect transistor to realize efficient electrical

158 oassay based on an electrolyte-gated organic field-effect transistor whose organic semiconductor is p

159 The negative-capacitance field-effect transistor(NC-FET) has attracted tremendous

160 ube transistor, known as the single-molecule field-effect transistor, is a bioelectronics alternative

161 vice, which is the polariton equivalent to a field-effect transistor, relies on combining electro-opt

162 When used in a single-enantiomer organic field-effect transistor, the potential to discriminate C

163 Ren et al. combine a nanopore sensor and a field-effect transistor, whereby gate voltage mediates D

164 or for HbA1c based on the chemiresistor-type field-effect transistor, which has a simple sensor confi

165 spintronic devices, such as the topological field-effect transistor.

166 rroelectric field effect in a prototype Mott field-effect transistor.

167 f multiple silicon-based, chemical-sensitive field effect transistors (CSFETs) is presented to realiz

168 solution processed Electrolyte Gated Organic Field Effect Transistors (EGOFETs) based on a small mole

169 Field effect transistors (FET) have been widely used as

170 lusions are very general and should apply to field effect transistors (FET) with high-kappa dielectri

171 ly molybdenum disulfide and black phosphorus field effect transistors (FETs), as a class of analog an

172 Electronic devices, such as field effect transistors (FETs), from these materials re

173 -ALD) of Al(2)O(3) on graphene for top gated field effect transistors (FETs).

174 a number of advances in the use of graphene field effect transistors (G-FET) including the first use

175 tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent

176 (PSA) in human serum using silicon nanowire field effect transistors (NW FETs) with Schottky contact

177 Silicon nanowire field effect transistors (NWFETs) are low noise, low pow

178 ntiometric sensors based on silicon nanowire field effect transistors (SiNW FETs) typically display e

179 Organic field effect transistors based on 2,2'-biaceanthrylene w

180 age, and carrier mobility of the alloy-based field effect transistors can be systematically modulated

181 Field effect transistors fabricated on molecularly thin

182 vantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz

183 ed the field of ion-selective electrodes and field effect transistors for over 30 years.

184 A critical challenge to translating field effect transistors into biochemical sensor platfor

185 ctors based on molybdenum disulfide (MoS(2)) field effect transistors showed that it was difficult to

186 the used gasses, allowing the realization of field effect transistors, and p-n junctions with precise

187 tion from the source electrode in back-gated field effect transistors.

188 eV and are p-type semiconductors in organic field effect transistors.

189 bioprobes) conjugated graphene micropattern field-effect transistors (ABX-GMFETs) to facilitate on-s

190 Ambipolar carbon nanotube based field-effect transistors (AP-CNFETs) exhibit unique elec

191 ly fabricated random network carbon nanotube field-effect transistors (CNT-FETs) have benefitted from

192 l monitoring while Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) have never been descr

193 properties of short one-dimensional nanowire field-effect transistors (FET) and quantum bit (qubit) d

194 erial, in this study, we demonstrate through field-effect transistors (FET) measurements that amorpho

195 anoscale single-crystalline oxide materials: field-effect transistors (FETs) and source-gated transis

196 Transient currents in atomically thin MoTe2 field-effect transistors (FETs) are measured during cycl

197 t mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates

198 ely used for benchmarking the performance of field-effect transistors (FETs) based on novel nanomater

199 ctures as well as silicon (Si) nanowire (NW) field-effect transistors (FETs) covered with a thin SiO(

200 enable high-performance, solution-processed field-effect transistors (FETs) for next-generation, low

201 d a novel approach of using fabricated Si NW field-effect transistors (FETs) in combination with fluo

202 le layers (EDLs) formed in electrolyte-gated field-effect transistors (FETs) induce an extremely larg

203 rier type in molybdenum ditelluride (MoTe2 ) field-effect transistors (FETs) is described, through ra

204 -based applications of biomolecule-decorated field-effect transistors (FETs) range from biosensors to

205 Field-effect transistors (FETs) with Pd edge contact and

206 tivity were monitored using liquid-ion gated field-effect transistors (FETs).

207 e of the photoresponse in backgated graphene field-effect transistors (GFET) on silicon carbide (SiC)

208 nesterease (AchE) immobilization on graphene field-effect transistors (gFETs) for building up Acetylc

209 ere we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate d

210 ansport modeling of photocurrent in graphene field-effect transistors (including realistic electromag

211 Ion sensitive field-effect transistors (ISFET) are the basis of radica

212 ork describes an array of 1024 ion-sensitive field-effect transistors (ISFETs) using sensor-learning

213 e readout signals of rGO based ion sensitive field-effect transistors (ISFETs).

214 Here, multioperation-mode light-emitting field-effect transistors (LEFETs) consisting of a monola

215 focuses on the advancements of using organic field-effect transistors (OFETs) in flexible electronic

216 rrier injection in bottom-gate PBTTT organic field-effect transistors (OFETs) is demonstrated.

217 ganic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), solar cells or other l

218 als for the use in air-stable n-type organic field-effect transistors (OFETs), whose optical and elec

219 semiconductors for high-performance organic field-effect transistors (OFETs).

220 d synthesized for the fabrication of organic field-effect transistors (OFETs).

221 and urease onto reduced-graphene-oxide based field-effect transistors (rGO FETs) for the detection of

222 T polymers in light-emitting diodes, organic field-effect transistors and organic photovoltaics, DTT

223 , which can be utilized for polarity-tunable field-effect transistors and photodetectors.

224 cation of high-mobility monolayer 2H-MoTe(2) field-effect transistors and the three-level integration

225 g electronic properties for high-performance field-effect transistors and ultra-low power devices suc

226 oped (p-type) molybdenum di-sulfide (MoS(2)) field-effect transistors are examined using pulsed-gate

227 High-performance tellurium p-type field-effect transistors are fabricated on a wide range

228 ting aptamers as the recognition element and field-effect transistors as the signal transducer.

229 by monitoring electrical parameters of MoS2 field-effect transistors as their environment is changed

230 Thin film field-effect transistors based on (4Tm)(2)SnI(4) exhibit

231 Top-gated field-effect transistors based on Bi2O2Se crystals down

232 However, field-effect transistors based on two-dimensional materi

233 r p-type behavior in CH3 NH3 PbI3 microplate field-effect transistors by thermal annealing is reporte

234 dimensions of the semiconducting channels in field-effect transistors decrease, the contact resistanc

235 However, the optimized field-effect transistors demonstrated an average saturat

236 s investigated for solution-sheared films in field-effect transistors demonstrating that SBT can enab

237 nstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies

238 r an architecture inspired by the human eye: field-effect transistors employing carbon nanotubes func

239 ents performed using top-gate bottom-contact field-effect transistors exhibit a high saturation elect

240 The field-effect transistors fabricated from the full-covera

241 on (CTE) of the consecutive device layers of field-effect transistors generates trapping states that

242 Multi-electrode field-effect transistors have been integrated on a singl

243 mal activation of charge mobility in polymer field-effect transistors have excited the interest in tr

244 Field-effect transistors made from the few-layer PdSe2 d

245 , where 32 x 32 = 1024 MoS(2) photosensitive field-effect transistors manifesting persistent photocon

246 cal transport measurements indicate that the field-effect transistors of the junction show an ultra-l

247 Here we report high-performance MoS(2) field-effect transistors on paper fabricated with a "cha

248 t vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leaka

249 ate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-ef

250 eproducible fabrication process of rGO based field-effect transistors on wafer level.

251 t a large increase in the performance of TMD field-effect transistors operating under ambient conditi

252 Few-layer PdSe(2) field-effect transistors reveal tunable ambipolar charge

253 Characterization of 3(OTf)-based field-effect transistors reveals that the observed elect

254 ropose two-dimensional topological insulator field-effect transistors that switch based on the modula

255 been made in advancing carrier mobilities in field-effect transistors through developing low-disorder

256 estigations, microscale single-crystal fiber field-effect transistors were also fabricated.

257 rated onto MoS(2), enabling high-performance field-effect transistors with a mobility of 167 +/- 20 s

258 netic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below

259 abrication of high-performance short-channel field-effect transistors with bottom-up synthesized armc

260 bbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1

261 Field-effect transistors with patterned channels show si

262 c power consumption problems in conventional field-effect transistors(3,4).

263 to be excellent semiconductors for ultrathin field-effect transistors(4,5).

264 (such as magnetoresistive memories and spin field-effect transistors).

265 ic amperometry, potential sweep voltammetry, field-effect transistors, affinity-based biosensing, as

266 tics, organic light emitting diodes, organic field-effect transistors, and organic solar cells.

267 antages of nanopore single-molecule sensing, field-effect transistors, and recognition chemistry.

268 aracteristics are like those of conventional field-effect transistors, at large drain-source bias neg

269 ipal focus, with examples cited that include field-effect transistors, capacitors, memristors, and a

270 A sensing is facilitated using Ion-Sensitive Field-Effect Transistors, fabricated in unmodified compl

271 nt HBC were used to fabricate single-crystal field-effect transistors, from which the highest p-chann

272 anoribbons show promise for high-performance field-effect transistors, however they often suffer from

273 generation thin film electronic devices like field-effect transistors, light-emitting diodes, and sol

274 plications including sub-10 nm complementary field-effect transistors, optoelectronic integrated circ

275 ures also known as heterostructures, such as field-effect transistors, require robust and reproducibl

276 ctrical transport in monolayer MoS(2)/WSe(2) field-effect transistors, revealing that the charge tran

277 ls and more than two million carbon-nanotube field-effect transistors-promising new nanotechnologies

278 mes more sensitive than traditional graphene field-effect transistors.

279 and 0.4 x 10(-3) cm(2)V(-1)s(-1) measured in field-effect transistors.

280 ecent leaps forward in the performance of NC field-effect transistors.

281 mobility of up to 0.52 cm(2) V(-1) s(-1) in field-effect transistors.

282 xtended fused backbones for high-performance field-effect transistors.

283 avior, and can be used in photodetectors and field-effect transistors.

284 nic semiconductors used in photovoltaics and field-effect transistors.

285 nd ultra-low power devices such as tunneling field-effect transistors.

286 cture and the charge-transport properties in field-effect transistors.

287 ecord performance for melt-processed organic field-effect transistors.

288 tion of these effects in atomically-thin WS2 field-effect transistors.

289 compared with those of previous biotemplated field-effect transistors.

290 -1) s(-1) in bottom-gate top-contact organic field-effect transistors.

291 backbone and the pi-pi stacking direction in field-effect transistors.

292 equently incorporated as the active layer in field-effect transistors.

293 llable chemical sensors or proton-conducting field-effect transistors.

294 ation of high-performance wafer-scale p-type field-effect transistors.

295 ort characteristics of fabricated back-gated field-effect-transistors are directly correlated to the

296 The high temperature performance oforganic field-effect transistorsbased on a molecular organic sem

297 redict the feasibility of observing magnetic field effects under experimentally relevant conditions.

298 particularly striking is that electrostatic field effects upon key photochemical transitions are pre

299 ized on silicon-nanowires (n = 1000) and the field effects were measured (DeltaI) as their target ant

300 y the orientation of the haptic environment (field effect) whereas triggered reactions were modulated