ライフサイエンスコーパス: field effect transistor

1 (such as magnetoresistive memories and spin field-effect transistors).

2 and incorporated as the active material in a field effect transistor.

3 spintronic devices, such as the topological field-effect transistor.

4 rroelectric field effect in a prototype Mott field-effect transistor.

5 etical limit for a metal-oxide-semiconductor field-effect transistor.

6 tion from the source electrode in back-gated field effect transistors.

7 eV and are p-type semiconductors in organic field effect transistors.

8 rting or ambipolar semiconductors in organic field effect transistors.

9 mes more sensitive than traditional graphene field-effect transistors.

10 mobility of up to 0.52 cm(2) V(-1) s(-1) in field-effect transistors.

11 xtended fused backbones for high-performance field-effect transistors.

12 avior, and can be used in photodetectors and field-effect transistors.

13 nic semiconductors used in photovoltaics and field-effect transistors.

14 nd ultra-low power devices such as tunneling field-effect transistors.

15 compared with those of previous biotemplated field-effect transistors.

16 cture and the charge-transport properties in field-effect transistors.

17 ecord performance for melt-processed organic field-effect transistors.

18 tion of these effects in atomically-thin WS2 field-effect transistors.

19 -1) s(-1) in bottom-gate top-contact organic field-effect transistors.

20 backbone and the pi-pi stacking direction in field-effect transistors.

21 equently incorporated as the active layer in field-effect transistors.

22 hnology is also used increasingly in organic field-effect transistors.

23 yocardial infarction, using silicon nanowire field-effect transistors.

24 on the switching characteristics of organic field-effect transistors.

25 g with lower gate voltages than conventional field-effect transistors.

26 llable chemical sensors or proton-conducting field-effect transistors.

27 ntal limitations on the power consumption of field-effect transistors.

28 y thin-film electrodes and channel layers of field-effect transistors.

29 mparable to existing thin-film ferroelectric field-effect transistors.

30 anotube and n-type indium gallium zinc oxide field-effect transistors.

31 he charge mobility of rubrene single-crystal field-effect transistors.

32 ation of high-performance wafer-scale p-type field-effect transistors.

33 and 0.4 x 10(-3) cm(2)V(-1)s(-1) measured in field-effect transistors.

34 ecent leaps forward in the performance of NC field-effect transistors.

35 c power consumption problems in conventional field-effect transistors(3,4).

36 to be excellent semiconductors for ultrathin field-effect transistors(4,5).

37 bioprobes) conjugated graphene micropattern field-effect transistors (ABX-GMFETs) to facilitate on-s

38 linesterase-modified AlGaN/GaN solution-gate field-effect transistors (AcFETs) are quantitatively ana

39 ic amperometry, potential sweep voltammetry, field-effect transistors, affinity-based biosensing, as

40 dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge

41 ctronics targeting applications ranging from field-effect transistors and light-emitting diodes to me

42 T polymers in light-emitting diodes, organic field-effect transistors and organic photovoltaics, DTT

43 , which can be utilized for polarity-tunable field-effect transistors and photodetectors.

44 Field-effect transistors and photovoltaic cells demonstr

45 cation of high-mobility monolayer 2H-MoTe(2) field-effect transistors and the three-level integration

46 g electronic properties for high-performance field-effect transistors and ultra-low power devices suc

47 the used gasses, allowing the realization of field effect transistors, and p-n junctions with precise

48 tics, organic light emitting diodes, organic field-effect transistors, and organic solar cells.

49 antages of nanopore single-molecule sensing, field-effect transistors, and recognition chemistry.

50 ions, ranging from random access memories to field-effect transistors, and tunnelling devices.

51 Ambipolar carbon nanotube based field-effect transistors (AP-CNFETs) exhibit unique elec

52 Herein, we report an aptamer-based field effect transistor (aptaFET) biosensor, developed b

53 Thin-film field-effect transistors are essential elements of stret

54 oped (p-type) molybdenum di-sulfide (MoS(2)) field-effect transistors are examined using pulsed-gate

55 High-performance tellurium p-type field-effect transistors are fabricated on a wide range

56 Average charge carrier mobilities in field-effect transistors are found to increase by up to

57 ort characteristics of fabricated back-gated field-effect-transistors are directly correlated to the

58 etection approach on silicon nanowires-based field-effect transistor arrays, by creating a suitable '

59 e OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA i

60 ting aptamers as the recognition element and field-effect transistors as the signal transducer.

61 by monitoring electrical parameters of MoS2 field-effect transistors as their environment is changed

62 Using a ubiquitous electronic device - the field-effect transistor - as a platform, colloidal nanom

63 aracteristics are like those of conventional field-effect transistors, at large drain-source bias neg

64 Organic field effect transistors based on 2,2'-biaceanthrylene w

65 Thin film field-effect transistors based on (4Tm)(2)SnI(4) exhibit

66 Top-gated field-effect transistors based on Bi2O2Se crystals down

67 However, field-effect transistors based on two-dimensional materi

68 icle analogues is demonstrated by a graphene field-effect transistor bioassay of small-molecule gluco

69 con nanowire (SiNW) is applied in biological field effect transistor (BioFET) system.

70 In this work, a field-effect transistor biosensor based on molybdenum di

71 te the successful fabrication of a promising field-effect transistor biosensor for EVD diagnosis.

72 A, which incorporates an amplifying nanowire field-effect transistor biosensor, is able to offer supe

73 rescence-based, nanomonitors, SPR-based, and field-effect transistor biosensors for early detection a

74 ance mapping in monolayer and few-layer MoS2 field-effect transistors by microwave impedance microsco

75 r p-type behavior in CH3 NH3 PbI3 microplate field-effect transistors by thermal annealing is reporte

76 age, and carrier mobility of the alloy-based field effect transistors can be systematically modulated

77 In particular, GeSn field effect transistors can exhibit very high performan

78 ipal focus, with examples cited that include field-effect transistors, capacitors, memristors, and a

79 t with the goal of favoring unipolar organic field effect transistor characteristics.

80 In particular, carbon nanotube field-effect transistor (CNFET)-based digital circuits p

81 rocessable electrolyte-gated carbon nanotube field-effect transistors (CNT-FETs) are a simple and cos

82 ly fabricated random network carbon nanotube field-effect transistors (CNT-FETs) have benefitted from

83 ron nitride/graphene) in a semifloating gate field-effect transistor configuration.

84 re, we present an atomic threshold-switching field-effect transistor constructed by integrating a met

85 Here, we report a silicene field-effect transistor, corroborating theoretical expec

86 A new bioelectronic nose based on a field effect transistor coupled with an aptamer as the s

87 f multiple silicon-based, chemical-sensitive field effect transistors (CSFETs) is presented to realiz

88 dimensions of the semiconducting channels in field-effect transistors decrease, the contact resistanc

89 However, the optimized field-effect transistors demonstrated an average saturat

90 s investigated for solution-sheared films in field-effect transistors demonstrating that SBT can enab

91 Organic field-effect transistor device data show an ambipolar pe

92 ophenanthrothiophenes were used in p-channel field-effect transistor device fabrication, from which t

93 Single-crystal-based field-effect transistor devices of PBC exhibited efficie

94 ing high current on/off ratios up to 6000 in field-effect transistor devices.

95 with the trend in hole mobilities in organic field-effect transistor devices.

96 nstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies

97 ation of aripiprazole with the extended-gate field-effect transistor (EG-FET) chemosensor.

98 lasmon resonance (SPR) and electrolyte gated field-effect transistor (EG-FET) methods in a single ana

99 ognition unit with a sensitive extended-gate field-effect transistor (EG-FET) transducer leads to hig

100 rtz crystal resonator (QCR) or extended-gate field-effect transistor (EG-FET) transducers integrated

101 An extended-gate field-effect transistor (EG-FET) was used as the transdu

102 monstrate that the Electrolyte Gated Organic Field Effect Transistor (EGOFET) is an ultrasensitive an

103 operate an ultra-sensitive electrolyte-gated field-effect transistor (EGOFET) as a sensor and facilit

104 sensor based on an Electrolyte-Gated Organic Field-Effect Transistor (EGOFET) integrated with microfl

105 ed from that of an electrolyte-gated organic field-effect transistor (EGOFET) to that of an OECT by i

106 unosensor based on electrolyte-gated organic field-effect transistor (EGOFET) was developed for the d

107 rating a multigate electrolyte gated organic field-effect transistor (EGOFET) with a 6.5 muL microflu

108 sensitivity of the electrolyte-gated organic field-effect transistor (EGOFET).

109 solution processed Electrolyte Gated Organic Field Effect Transistors (EGOFETs) based on a small mole

110 l monitoring while Electrolyte-Gated Organic Field-Effect Transistors (EGOFETs) have never been descr

111 istic Dirac peaks for a single-gate graphene field-effect transistor embodiment that exhibits hole an

112 the first time in a three-terminal graphene field-effect transistor embodiment, we introduce a rapid

113 r an architecture inspired by the human eye: field-effect transistors employing carbon nanotubes func

114 ents performed using top-gate bottom-contact field-effect transistors exhibit a high saturation elect

115 Field effect transistors fabricated on molecularly thin

116 The field-effect transistors fabricated from the full-covera

117 Organic thin-film field-effect transistors fabricated from these materials

118 e optical and electrical characterization of field-effect transistors fabricated on both materials.

119 A sensing is facilitated using Ion-Sensitive Field-Effect Transistors, fabricated in unmodified compl

120 In this work, we developed a field effect transistor (FET) biosensor utilizing soluti

121 Field effect transistor (FET) biosensors based on low-di

122 ubstrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time

123 The monolayer MoS(2) field effect transistor (FET) exhibits photo-induced sho

124 trand displacement-based probe on a graphene field effect transistor (FET) for high-specificity, sing

125 functionalized reduced graphene oxide (rGO) field effect transistor (FET) is reported.

126 MOSFET, strain is exerted to a bilayer MoS2 field effect transistor (FET) through deposition of a si

127 Field effect transistors (FET) have been widely used as

128 lusions are very general and should apply to field effect transistors (FET) with high-kappa dielectri

129 films, batch fabrication of high-performance field-effect transistor (FET) arrays in wafer-scale is d

130 t the first use of an aptamer-functionalized field-effect transistor (FET) as a label-free sensor for

131 A black phosphorous (BP)-based field-effect transistor (FET) biosensor was fabricated b

132 (BHV-1) this study employs an extended-gate field-effect transistor (FET) for direct potentiometric

133 Field-effect transistor (FET) is a very promising platfo

134 atable electronic antibiotic sensor based on field-effect transistor (FET) is reported.

135 Nanomaterial-based field-effect transistor (FET) sensors are capable of lab

136 In this review, different field-effect transistor (FET) structures and detection p

137 An ambipolar dual-channel field-effect transistor (FET) with a WSe2 /MoS2 heterost

138 ced Raman scattering (SERS)-based biosensor, field-effect transistor (FET)-based biosensor, surface p

139 Field-effect transistor (FET)-based biosensors allow lab

140 ilized highly specific aptamer probes and 2) field-effect transistor (FET)-based sensor arrays.

141 The vision of silicon field-effect transistor (FET)-based sensors has been an

142 Ts surface for highly sensitive and specific field-effect transistor (FET)/chemiresistor (CR) biosens

143 single-walled carbon nanotubes (SWNTs) in a field-effect transistor (FET)/chemiresistor architecture

144 properties of short one-dimensional nanowire field-effect transistors (FET) and quantum bit (qubit) d

145 c decrease of charge mobilities by utilizing field-effect transistors (FET) based on two phases of ti

146 The study reports the use of extended gate field-effect transistors (FET) for the label-free and se

147 erial, in this study, we demonstrate through field-effect transistors (FET) measurements that amorpho

148 Field effect transistors (FETs) have been fabricated bas

149 ly molybdenum disulfide and black phosphorus field effect transistors (FETs), as a class of analog an

150 Electronic devices, such as field effect transistors (FETs), from these materials re

151 -ALD) of Al(2)O(3) on graphene for top gated field effect transistors (FETs).

152 anoscale single-crystalline oxide materials: field-effect transistors (FETs) and source-gated transis

153 stem comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-condition

154 d device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by mode

155 Transient currents in atomically thin MoTe2 field-effect transistors (FETs) are measured during cycl

156 t mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates

157 ely used for benchmarking the performance of field-effect transistors (FETs) based on novel nanomater

158 ctures as well as silicon (Si) nanowire (NW) field-effect transistors (FETs) covered with a thin SiO(

159 w ~150 K, indicating that insofar WSe2-based field-effect transistors (FETs) display the largest Hall

160 enable high-performance, solution-processed field-effect transistors (FETs) for next-generation, low

161 d a novel approach of using fabricated Si NW field-effect transistors (FETs) in combination with fluo

162 le layers (EDLs) formed in electrolyte-gated field-effect transistors (FETs) induce an extremely larg

163 rier type in molybdenum ditelluride (MoTe2 ) field-effect transistors (FETs) is described, through ra

164 -based applications of biomolecule-decorated field-effect transistors (FETs) range from biosensors to

165 Field-effect transistors (FETs) with Pd edge contact and

166 tivity were monitored using liquid-ion gated field-effect transistors (FETs).

167 miconductor Manufacturing Company) 12 nm fin field-effect transistor (FinFET), 28 nm and 40 nm comple

168 vantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz

169 ed the field of ion-selective electrodes and field effect transistors for over 30 years.

170 ssible, the realization of a functional spin field-effect transistor for information processing has y

171 nt HBC were used to fabricate single-crystal field-effect transistors, from which the highest p-chann

172 a number of advances in the use of graphene field effect transistors (G-FET) including the first use

173 rigid and flexible radio-frequency graphene field-effect transistors (G-FETs) were demonstrated, wit

174 on (CTE) of the consecutive device layers of field-effect transistors generates trapping states that

175 phase to a semiconducting MoTe(2) phase in a field-effect transistor geometry.

176 d system employs an aptameric graphene-based field effect transistor (GFET) using a buried-gate geome

177 nosensor based on antibody-modified graphene field effect transistor (GFET) was presented.

178 is work presents a fully integrated graphene field-effect transistor (GFET) biosensor for the label-f

179 e accomplished via photogating of a graphene field-effect transistor (GFET) by carriers generated wit

180 Graphene field-effect transistor (GFET) sensors are an attractive

181 A graphene field-effect transistor (gFET) was non-covalently functi

182 e of the photoresponse in backgated graphene field-effect transistors (GFET) on silicon carbide (SiC)

183 nesterease (AchE) immobilization on graphene field-effect transistors (gFETs) for building up Acetylc

184 ere we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate d

185 Multi-electrode field-effect transistors have been integrated on a singl

186 mal activation of charge mobility in polymer field-effect transistors have excited the interest in tr

187 sotropy (VCMA) in Au/[DEME](+) [TFSI](-) /Co field-effect transistor heterostructures is addressed.

188 Organic field-effect transistors hold the promise of enabling lo

189 anoribbons show promise for high-performance field-effect transistors, however they often suffer from

190 semiconductor molecules in a single crystal field-effect transistor in order to correlate the measur

191 n analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band

192 esults re-strengthen the promise of graphene field-effect transistors in next generation semiconducto

193 ansport modeling of photocurrent in graphene field-effect transistors (including realistic electromag

194 D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, g

195 A critical challenge to translating field effect transistors into biochemical sensor platfor

196 ube transistor, known as the single-molecule field-effect transistor, is a bioelectronics alternative

197 he sensor was fabricated as an ion-selective field effect transistor (ISFET) in order to be able to q

198 which the pH sensitivity of an Ion Sensitive Field Effect transistor (ISFET) sensor can be significan

199 tive surface of a conventional ion-selective field effect transistor (ISFET) with the afforded SAM re

200 Ion sensitive field-effect transistors (ISFET) are the basis of radica

201 ork describes an array of 1024 ion-sensitive field-effect transistors (ISFETs) using sensor-learning

202 e readout signals of rGO based ion sensitive field-effect transistors (ISFETs).

203 er, another type of transistor, the junction field-effect transistor (JFET) is free of dielectric lay

204 Here, multioperation-mode light-emitting field-effect transistors (LEFETs) consisting of a monola

205 generation thin film electronic devices like field-effect transistors, light-emitting diodes, and sol

206 y and nonvolatility compared to conventional field-effect transistor logic.

207 Field-effect transistors made from the few-layer PdSe2 d

208 , where 32 x 32 = 1024 MoS(2) photosensitive field-effect transistors manifesting persistent photocon

209 Microwave conductance and field-effect transistor measurements demonstrate that bo

210 further chemical treatment, as determined by field-effect transistor measurements.

211 mising hole mobility, which was evaluated by field-effect transistor measurements.

212 ave developed a reduced graphene oxide-based field-effect transistor method for real-time detection o

213 type doping that simultaneously improves the field-effect transistor mobility and on/off current rati

214 sing the classical metal oxide-semiconductor field-effect transistor model.

215 reshold slope of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV dec(-1) at roo

216 f inversion in the metal-oxide-semiconductor field-effect transistor (MOSFET) takes place when the su

217 tunneling-current metal-oxide-semiconductor field effect transistors (MOSFETs) that are independent

218 detection based on metal-oxide-semiconductor field-effect transistors (MOSFETs).

219 The negative-capacitance field-effect transistor(NC-FET) has attracted tremendous

220 f nanoscale sensors dubbed nanopore extended field-effect transistor (nexFET) that combine the advant

221 (PSA) in human serum using silicon nanowire field effect transistors (NW FETs) with Schottky contact

222 Silicon nanowire field effect transistors (NWFETs) are low noise, low pow

223 cal transport measurements indicate that the field-effect transistors of the junction show an ultra-l

224 Meanwhile, organic field effect transistor (OFET) mobility data showed the

225 Organic field-effect transistor (OFET) measurements demonstrate

226 We study P3MEEMT-based OECT and organic field-effect transistor (OFET) performance as a function

227 nary studies of their performance in organic field effect transistors (OFETs) indicate the potential

228 s) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence

229 focuses on the advancements of using organic field-effect transistors (OFETs) in flexible electronic

230 rrier injection in bottom-gate PBTTT organic field-effect transistors (OFETs) is demonstrated.

231 ganic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), solar cells or other l

232 als for the use in air-stable n-type organic field-effect transistors (OFETs), whose optical and elec

233 d synthesized for the fabrication of organic field-effect transistors (OFETs).

234 semiconductors for high-performance organic field-effect transistors (OFETs).

235 We fabricate all-nanocrystal field-effect transistors on flexible plastics with elect

236 Here we report high-performance MoS(2) field-effect transistors on paper fabricated with a "cha

237 t vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leaka

238 ate all inkjet-printed flexible and washable field-effect transistors on textile, reaching a field-ef

239 eproducible fabrication process of rGO based field-effect transistors on wafer level.

240 t a large increase in the performance of TMD field-effect transistors operating under ambient conditi

241 plications including sub-10 nm complementary field-effect transistors, optoelectronic integrated circ

242 refer to as two-dimensional electrostrictive field effect transistor or 2D-EFET, allows sub-60 mV/dec

243 Penicillinase-modified AlGaN/GaN field-effect transistors (PenFETs) are utilized to syste

244 describes a pressure tolerant Ion Sensitive Field Effect Transistor pH sensor that is based on the H

245 transformation to realize scalable nanowire field-effect transistor probe arrays with controllable t

246 ls and more than two million carbon-nanotube field-effect transistors-promising new nanotechnologies

247 vice, which is the polariton equivalent to a field-effect transistor, relies on combining electro-opt

248 ures also known as heterostructures, such as field-effect transistors, require robust and reproducibl

249 The conventional metal-oxide-semiconductor field-effect transistor requires sophisticated dielectri

250 Few-layer PdSe(2) field-effect transistors reveal tunable ambipolar charge

251 ctrical transport in monolayer MoS(2)/WSe(2) field-effect transistors, revealing that the charge tran

252 Characterization of 3(OTf)-based field-effect transistors reveals that the observed elect

253 e polymer were performed using a remote-gate field-effect transistor (RG FET) detection system that w

254 and urease onto reduced-graphene-oxide based field-effect transistors (rGO FETs) for the detection of

255 printable graphene-based electrochemical and field effect transistor sensors for some important analy

256 ochemiluminescence, photoelectrochemical and field-effect transistor sensors.

257 of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both

258 Thus, nanowire-based field-effect transistors show extremely high field-effec

259 ctors based on molybdenum disulfide (MoS(2)) field effect transistors showed that it was difficult to

260 tronic coupling, and thus a NW-based organic field-effect transistor shows high field-effect mobility

261 ntiometric sensors based on silicon nanowire field effect transistors (SiNW FETs) typically display e

262 ding aptamer-modified silicon nanowire-based field-effect transistor (SiNW-FET) biosensor, with a det

263 oS2 followed by lithographic definition of a field-effect transistor structure on top.

264 al insulator (TI) thin film using a top-gate field-effect transistor structure.

265 ea chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual

266 order of 1-5 cm(2) V(-1) s(-1), supported by field-effect transistor studies of slightly doped sample

267 escribe the electrical properties of organic field-effect transistors, such as mobility and threshold

268 erformance by utilizing two ReS2 anisotropic field-effect transistors, suggesting the promising imple

269 ived from standard metal oxide semiconductor field effect transistor technology and pave a way for pr

270 While implementing such materials into field-effect-transistor technology can potentially augme

271 tion recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their

272 Tunneling field effect transistors (TFETs) have been proposed to o

273 development and testing of a graphene-based field-effect transistor that uses clustered regularly in

274 ropose two-dimensional topological insulator field-effect transistors that switch based on the modula

275 -BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxi

276 When used in a single-enantiomer organic field-effect transistor, the potential to discriminate C

277 ic systems such as high-mobility metal oxide field-effect transistors, the cuprate superconductors, a

278 been made in advancing carrier mobilities in field-effect transistors through developing low-disorder

279 ) in a microcavity-integrated light-emitting field-effect transistor to realize efficient electrical

280 This consequently allows ambipolar field-effect transistors to be transformed into high-per

281 ealization of highly sensitive and selective field effect transistor-type lactate biosensor.

282 In a field-effect transistor using a transferred lead zircona

283 p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated.

284 estigations, microscale single-crystal fiber field-effect transistors were also fabricated.

285 Ren et al. combine a nanopore sensor and a field-effect transistor, whereby gate voltage mediates D

286 We propose a prototype spin wave field-effect transistor which realizes a gate-tunable ma

287 or for HbA1c based on the chemiresistor-type field-effect transistor, which has a simple sensor confi

288 oassay based on an electrolyte-gated organic field-effect transistor whose organic semiconductor is p

289 accomplished this by integrating a graphene field effect transistor with a scanning tunnelling micro

290 osensor, developed by using an extended gate field effect transistor with inter-digitated gold microe

291 brication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the

292 rated onto MoS(2), enabling high-performance field-effect transistors with a mobility of 167 +/- 20 s

293 netic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below

294 abrication of high-performance short-channel field-effect transistors with bottom-up synthesized armc

295 us-exfoliated phosphorene flakes are used in field-effect transistors with high drive currents and cu

296 bbon as the channel material, we demonstrate field-effect transistors with high on-current (I on > 1

297 00 square centimeters per volt per second in field-effect transistors with microwave-reduced GO (MW-r

298 Field-effect transistors with patterned channels show si

299 bility of 6.6 cm(2) V(-1) s(-1) in top-gated field-effect transistors with pentafluorobenzenethiol-mo

300 Here, we present submicron field-effect transistors with specially designed low-res