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1 e using a halide perovskite/oxide perovskite heterostructure.
2 l magnetization in a ferromagnetic thin film heterostructure.
3 ne electrodes are introduced to an AlGaN/GaN heterostructure.
4  optical excitation of a metal/semiconductor heterostructure.
5 tching in a polycrystalline PtMn/Pt metallic heterostructure.
6 ted V(2)O(3)/PMN-PT [Pb(Mg,Nb)O(3)-PbTiO(3)] heterostructure.
7  metal phase in a BaTiO(3)/SrRuO(3)/BaTiO(3) heterostructure.
8 o(0.4)Fe(0.4)Zr(0.1)Y(0.1)O(3-delta)-ZnO p-n heterostructure.
9 ross section of the BiFeO(3) /TbScO(3) (001) heterostructure.
10 to TiO(2) in a rationally designed Ni-TiO(2) heterostructure.
11 y and promotion of ionic conductivity in the heterostructure.
12 ve capacitance in a ferroelectric-dielectric heterostructure.
13 y and electronic properties of the composite heterostructure.
14 ast excited state dynamics in the 2DP/MoS(2) heterostructure.
15  polylactic acid junctions in the 3D-printed heterostructure.
16 nt growth of other Janus materials and their heterostructures.
17 (4):PEA(2)SnI(4) interfaces in 2D perovskite heterostructures.
18 , metastable crystal structures, and complex heterostructures.
19 ion of components for vertical van der Waals heterostructures.
20 s Hall effect in Cr(2) Ge(2) Te(6) /tantalum heterostructures.
21 ent ferroelectricity in graphene-based moire heterostructures.
22 uantum phenomena in 2DP hybrid van der Waals heterostructures.
23 tch to control ferroelectricity in thin-film heterostructures.
24 date the complex physics of moire engineered heterostructures.
25 -dimensional electron gases in semiconductor heterostructures.
26 covalent triazine frameworks etc.) and their heterostructures.
27 echnological route for up-scalable films and heterostructures.
28 or automating the fabrication process of vdW heterostructures.
29 g-controlled orbital occupancy in perovskite heterostructures.
30 ers, and potentially fabrication of other 2D heterostructures.
31 rying the geometry of Si-Au slanted columnar heterostructures.
32 ies to engineer the device performance of 2D heterostructures.
33 or precise engineering of optimized skyrmion heterostructures.
34  array of novel physical properties in oxide heterostructures.
35 structure of titanate films, substrates, and heterostructures.
36 op of the TMDC templates to realize vertical heterostructures.
37 d layer-by-layer to form van der Waals (vdW) heterostructures.
38  in the strong spin-orbit regime in graphene heterostructures.
39 mergent phenomena at oxide interfaces and in heterostructures.
40  properties of nanoscale materials and their heterostructures.
41  of the highly-porous Si-Au slanted columnar heterostructures.
42 terlayer excitons in vertical MoSe(2)-WSe(2) heterostructures.
43  a potentially scalable synthesis of twisted heterostructures.
44 ter interactions in 2D materials and related heterostructures.
45 in angle-twisted semiconductor van der Waals heterostructures.
46  systems in thin film, and possibly in bulk, heterostructures.
47 irst thickness-dependent study of 2DP/MoS(2) heterostructures.
48 ionic devices based on van der Waals layered heterostructures.
49 face of similar and dissimilar van der Waals heterostructures.
50 citonic(5) and topological phenomena(6-8) in heterostructures.
51 tuning symmetries via strain engineering and heterostructuring.
52 ng, and offer an alternative to conventional heterostructuring.
53 led vertical InSe/black phosphorus (BP)(5-9) heterostructures(10).
54 eport that CTEs can be effectively formed in heterostructured 2D perovskites prepared by mixing PEA(2
55 nd systems realized in twisted van der Waals heterostructures(3-6).
56 he capacitance of a ferroelectric-dielectric heterostructure(4,7,14) or improving the subthreshold sw
57 semiconductor devices based on van der Waals heterostructures(9).
58 exploring proximity effects in van der Waals heterostructures(9-12).
59 thesis of one-dimensional (1D) van der Waals heterostructures, a class of materials where different a
60                                 Thus, planar heterostructures allow p-n junctions between different t
61 es(12-14) of transition metal dichalcogenide heterostructures allow us to optically create and invest
62 gradient of the bandgap across the monolayer heterostructure allows for the fabrication of heterogene
63                            In addition, such heterostructures also exhibited superior activity toward
64  are electrically controlled in such a PE/FM heterostructure and how a back-voltage is generated due
65 remote impurities in the doping layer of the heterostructure and surface roughness and impurity (dang
66 i-, and multimetallic nanoframes, as well as heterostructured and hybrid systems.
67  into how to manipulate topological modes in heterostructures and also provides a basis for recent ex
68  stacking layers of such materials to create heterostructures and can be further boosted by applying
69            In addition, we create artificial heterostructures and hybridize their physical properties
70 erministic fabrication of arbitrary vertical heterostructures and multi-heterostructures of Ruddlesde
71 ) (BZT)/Ba(0.7)Ca(0.3)TiO(3) (BCT) epitaxial heterostructures and studied their structural, dielectri
72 ns are performed for H(x) SmNiO(3) /SrRuO(3) heterostructures, and a Mottronic device is achieved.
73 h high-kappa dielectric gates, van der Waals heterostructures, and metallic interfaces between insula
74 Mo(2)AlB(2) and Mo(2)AlB(2)-AlO(x) nanosheet heterostructures, and opens the door to other previously
75                    Through our semiconductor heterostructure approach, our results provide insight in
76 onductor nanostructures and 2D van der Waals heterostructures are also stressed.
77 na in electronically coupled two-dimensional heterostructures are central to next-generation optical,
78 d growing various vertical/lateral TMD-based heterostructures are discussed.
79  properties in ferroelectric oxide films and heterostructures are explored.
80        Spintronic ferromagnetic/non-magnetic heterostructures are novel sources for the generation of
81  diffraction verifies that all shells in the heterostructures are single crystals.
82                            Three-dimensional heterostructures are usually created either by assemblin
83 ve FET device, involving the epitaxial oxide heterostructure as an ideal material platform for maximu
84  the potential use of Si-Au slanted columnar heterostructures as a highly porous plasmonic sensor wit
85 onic states in two-dimensional van der Waals heterostructures, as recently demonstrated in the correl
86 henomenon is detected in the Bi(2)Te(3)/FeTe heterostructure associated with the superconducting tran
87 de a large interfacial DMI in TI/ferrimagnet heterostructures at room temperature, resulting in small
88 f the transport properties of SrTiO(3)-based heterostructures at room temperature, while the heterost
89                              Herein, a novel heterostructure based on a combination of RuMo nanoalloy
90 (20)B(20)/Pb(Mg(1/3)Nb(2/3))(0.7)Ti(0.3)O(3) heterostructures based on a pseudo-magnetization u = m(x
91  also present results for 2 other foam-based heterostructures based on Kelvin and C15 foams that have
92                                    Epitaxial heterostructures based on oxide perovskites and III-V, I
93  approach to realise a variety of functional heterostructures based on van der Waals nanocrystal film
94 crystals are of interest for fabricating the heterostructure-based spintronics device.
95 on metal dichalcogenides and graphite/SiO(x) heterostructures beyond the widely accepted van der Waal
96 ensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-p
97                              A van der Waals heterostructure built from atomically thin semiconductin
98 be tailored and probed in spin-orbit coupled heterostructures by engineering subtle structural modula
99 e metal-insulator transitions (MIT) in oxide heterostructures by inducing interfacial oxygen vacancy
100   We systematically studied the TiO(2)/VO(2) heterostructures by structural and transport measurement
101 ation in a heavy metal (HM)/ferromagnet (FM) heterostructure can be regulated to a certain degree usi
102 o-optoelectronic properties of Van der Waals heterostructures can enable unprecedented platforms for
103 emonstrate that epitaxial Mn(3)GaN/permalloy heterostructures can generate unconventional spin-orbit
104  work shows how rational design of colloidal heterostructures can result in materials with significan
105 erfaces and bulk properties of the resulting heterostructures challenge our fundamental understanding
106                              Two-dimensional heterostructures combined with vertical geometries are c
107 nificant performance enhancements in abraded heterostructures compared to those fabricated through in
108           We describe here an unconventional heterostructure composed of strongly coupled Ni-deficien
109                                   Artificial heterostructures composed of dissimilar transition metal
110 are stable black-phase CsPbI(3) by forming a heterostructure comprising 0D Cs(4) PbI(6) and gamma-CsP
111 tretching platform: two dimensional in-plane heterostructure comprising graphene and hexagonal boron
112 c properties, potentially offering unlimited heterostructure configurations for exploration.
113     Here we report Coulomb blockade in a vdW heterostructure consisting of a transition metal dichalc
114 the end of Josephson junctions realized on a heterostructure consisting of aluminium on indium arseni
115        We also report a 5-nanometer-diameter heterostructure consisting of an inner SWCNT, a middle t
116                         We use van der Waals heterostructures consisting of a graphene monolayer rota
117 nts were synthesized, and many form triphase heterostructures consisting of either three-interface or
118  improved in hybrid metal semiconductor nano-heterostructures consisting of perovskite semiconductors
119 rts and a plethora of function-designable 1D heterostructures could be realized.
120                                   Engineered heterostructures create new functionality by integrating
121 inetics and the robust growth of 2D vertical heterostructures, defining a versatile material platform
122 on typical 2D N-doped carbon/RuMo nanoalloys heterostructures demonstrate that introducing N and Mo a
123 ransition metal dichalcogenide van der Waals heterostructures, demonstrate direct exfoliation of the
124 ion of nickelates(5,6), as well as thin-film heterostructures designed to host superconductivity.
125 ties of moire superlattices in van der Waals heterostructure devices is a critically needed diagnosti
126 lar dynamics simulations confirm the reduced heterostructure disorder and larger vacancy formation en
127                                          The heterostructure domains of 1T-MoS(2) and C(60) NSs exhib
128 nal (2D) layered materials and van der Waals heterostructures due to their intrinsic ultrahigh surfac
129                         The 30 % Pt/LiCoO(2) heterostructured electrocatalyst delivers low overpotent
130 , multifunctional active-center-transferable heterostructured electrocatalysts, platinum/lithium coba
131                           Initial studies of heterostructured electrodes are compared to state-of-the
132  LaMnO(3) /SrTiO(3) (LMO/STO) polar-nonpolar heterostructures, electronic reconstruction leads to an
133 que mesoporous WS(2) @graphene van der Waals heterostructures ensures the ready access of active site
134                                              Heterostructures exhibit considerable potential in the f
135                     Such rationally designed heterostructures exhibit interesting interlayer properti
136         It is shown that the SnSe/MoS(2) vdW heterostructure exhibits excellent p-n diode rectifying
137 (2)CuO(4)/La(2-x)Sr(x)CuO(4) (LSCO/LCO/LSCO) heterostructures fabricated using atomic layer-by-layer
138                  Structurally, these twisted heterostructures feature atomic reconstruction and domai
139 vertical displacement field, the ABC-TLG/hBN heterostructure features an isolated flat valence miniba
140 that graphene-insulator-metal is a promising heterostructure for optically controlled and electricall
141 nts show the topological Hall effect in this heterostructure for temperatures below 100 K.
142 hod for rational fabrication of carbon-metal heterostructures for highly efficient electrocatalysis.
143 icial excitonic crystals using van der Waals heterostructures for nanophotonics and quantum informati
144  providing a new approach to designing oxide heterostructures for novel ionotronics and neuromorphic-
145 lms, and their integration into advanced MTI heterostructures for quantum device applications.
146 for the synthesis of multi-component organic heterostructures for various functions.
147 ures, akin to two-dimensional material-based heterostructures, for enhancing device functionalities(8
148                                Van der Waals heterostructures form a unique class of layered artifici
149  lattice mismatch, making them promising for heterostructure formation and semiconductor integration(
150 ly stable self-assembled lead-tin perovskite heterostructures formed between low-bandgap 3D and highe
151  layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe(2) and bi/trila
152     The proliferation of van der Waals (vdW) heterostructures formed by stacking layered materials ca
153                             In van der Waals heterostructures formed by stacking two monolayer semico
154 erials, and pave the way for the creation of heterostructures from 2D Janus layers.
155                   A new type of multiferroic heterostructure has been proposed in this work with stro
156                   Nanomaterials that form as heterostructures have applications in catalysis, plasmon
157                                Interfaces in heterostructures have been a key point of interest in co
158               Although several epitaxial vdW heterostructures have been achieved experimentally, the
159         Fullerene-based low-dimensional (LD) heterostructures have emerged as excellent energy conver
160                                Semiconductor heterostructures have enabled a great variety of applica
161         Moire superlattices in van der Waals heterostructures have given rise to a number of emergent
162                     Previously, such twisted heterostructures have involved a single planar interface
163 triction effect in piezoelectric/ferromagnet heterostructures holds promise for ultra-low energy info
164 he unconventional interlayer coupling in vdW heterostructures (HSs) by utilizing an emerging 2D mater
165 ition metal dichalcogenides (TMDCs) vertical heterostructures in terms of the nucleation and kinetics
166 eans of a Na (x) CoO(2)/CeO(2) semiconductor heterostructure, in which a field-induced metallic state
167  of new quantum phenomena in two-dimensional heterostructures, in which the interactions between the
168 lution in a variety of twisted van der Waals heterostructures including, but not limited to, conducti
169 tructures and the catalytic functions of the heterostructures, including the role of the fullerenes,
170 onal design of opto-electronic van der Waals heterostructures incorporating 2D semiconductors.
171 ed physical dimension, chemical composition, heterostructure interface, and electronic properties to
172 c field that originates from band bending at heterostructure interfaces induces polar symmetry therei
173    Our study enriches the functionalities of heterostructure interfaces, offering a distinctive appro
174 erostructures at room temperature, while the heterostructure is forming.
175   However, the practical realization of such heterostructures is challenging because of the difficult
176 ical Hall effect) in magnetic thin films and heterostructures is discussed.
177 logical structures in ferroic thin films and heterostructures is explored, including the observation
178      In this way, a family of vertical TMDCs heterostructures is successfully designed.
179 ternative methods that enable preparation of heterostructured materials is desired.
180 hancement mechanism for Ti(3)C(2)T(x)/WSe(2) heterostructured materials is proposed for highly sensit
181 amental control of magnetic coupling through heterostructure morphology is a prerequisite for rationa
182  highly stable and tunable lateral epitaxial heterostructures, multiheterostructures and superlattice
183                         Herein, a library of heterostructured, multimetallic (Pt, Pd, Rh, and Au) tet
184 ructural nanocrystals such as core-shell and heterostructured nanocrystals, well-defined multimetalli
185                     Strategies to synthesize heterostructured nanoparticles are emerging, but they ar
186 on measurements show that the domains of the heterostructured nanoparticles are epitaxially aligned.
187                                Multimetallic heterostructured nanoparticles with high-index facets po
188 xhibit low-index facets, Pt and Au form PtAu heterostructured nanoparticles with high-index facets, i
189 es and under different conditions within the heterostructured nanoparticles.
190 ons, that enable the rational synthesis of a heterostructured nanorod megalibrary.
191     We experimentally observe 113 individual heterostructured nanorods and demonstrate the scalable p
192        Previously unimaginable complexity in heterostructured nanorods is now routinely achievable wi
193 Waals materials and their vertically stacked heterostructures, new mass-scalable production routes wh
194 ional SnSe nanosheets (NSs) and Au/SnSe nano-heterostructure (NHS) prepared by a simple and economica
195                                Van der Waals heterostructures obtained via stacking and twisting have
196 udy of the metamagnetic/ferroelectric hybrid heterostructure of a quenched FeRh thin film (25 nm) gro
197                                          The heterostructure of monolayer transition metal dichalcoge
198 particle is reported, "polaronic trion" in a heterostructure of MoS(2) /SrTiO(3) (STO).
199 euromorphic image sensor array is based on a heterostructure of MoS(2) and poly(1,3,5-trimethyl-1,3,5
200                 Vertical van der Waals (vdW) heterostructures of 2D crystals with defined interlayer
201 ly, its superlattice nature may make various heterostructures of [MnBi(2)Te(4)] and [Bi(2)Te(3)] laye
202 Here we report sub-terahertz spin pumping in heterostructures of a uniaxial antiferromagnetic Cr(2)O(
203 refore, introduce Gaussian synapses based on heterostructures of atomically thin two-dimensional (2D)
204                 The electronic properties of heterostructures of atomically thin van der Waals crysta
205  exchange bias are demonstrated in all-oxide heterostructures of BiFeO(3) (BFO) and La(0.7) Sr(0.3) M
206 y such embedded topological states (ETSs) in heterostructures of GeTe (normal insulator) and [Formula
207 d demonstrate two-dimensional self-assembled heterostructures of graphene oxide and polyamine macromo
208 owever, epitaxial growth of atomically sharp heterostructures of halide perovskites has not yet been
209                                 By employing heterostructures of monolayer TMDs, we realize optical a
210                                Van der Waals heterostructures of monolayer transition metal dichalcog
211                      The crystal phase-based heterostructures of noble metal nanomaterials are of gre
212 eterministic fabrication of arbitrarily long heterostructures of periodically repeating bismuth-nanoc
213 rbitrary vertical heterostructures and multi-heterostructures of Ruddlesden-Popper perovskites with g
214                    Here, using van der Waals heterostructures of twisted double bilayer graphene (TDB
215  and enables the synthesis of epitaxial nano-heterostructures of unprecedented complexity.
216            Van der Waals materials and their heterostructures offer a versatile platform for studying
217             Our study shows that ABC-TLG/hBN heterostructures offer attractive model systems in which
218 ational flexibility enabled by van der Waals heterostructures offers significant opportunities for ar
219 iscuss its potential for creating artificial heterostructures or superlattices beyond the reach of ex
220   We report the two-dimensional (2D) natural heterostructure [Pb(3.1)Sb(0.9)S(4)][Au (x)Te(2- x)] ( x
221 with existing atomic resolution sensors, the heterostructure platform paves the way for sequencing DN
222 do physics or isolated quantum bits in a vdW heterostructure platform.
223  magnetization measurements reveal that this heterostructure possesses a metallic phase with high con
224 equilibrium systems, the chemically-specific heterostructures predicted here are lattice-matched, sho
225 magnet-nonmagnet interfaces in van der Waals heterostructures present a unique opportunity to investi
226 lex oxide heterointerfaces and van der Waals heterostructures present two versatile but intrinsically
227 band alignment in this layered ferroelectric heterostructure provide an opportunity to achieve high-p
228        Transition metal dichalcogenide moire heterostructures provide another model system for the st
229       The unique architecture of Pt/LiCoO(2) heterostructure provides abundant interfaces with favora
230 tz microrods@few-layered MoS(2) hierarchical heterostructure (QMSH).
231 kinetics to enable the growth of 2D vertical heterostructure remains a great challenge.
232  of 2DPs that form electronically coupled 2D heterostructures remains an outstanding challenge.
233  to control the components and morphology of heterostructures, respectively.
234 ibbons with well-defined edges; and vertical heterostructures resulted in the observation of supercon
235 oscopy on single block copolymerized organic heterostructures shows energy migration and light-harves
236 sent study has evidently provided a rational heterostructure strategy for improving various field emi
237 onstrate a multitude of different functional heterostructures such as resistors, capacitors and photo
238 condensates in hybrid cavity - van der Waals heterostructure systems.
239 ntheses for monometallic, multimetallic, and heterostructured systems, we showcase how the unique str
240                    Advances in van der Waals heterostructure technology(7) have now allowed us to mak
241                  Van der Waals materials and heterostructures that manifest strongly bound exciton st
242  as well as the possible van der Waals (vdW) heterostructures that one can create.
243                                   Like oxide heterostructures, the oxynitride has a superlattice of i
244          Here we show that, in FeSe/SrTiO(3) heterostructures, the superconducting transition tempera
245  structure and emergent functionality of the heterostructure, thereby providing a new approach to des
246 e, we report a strategy for constructing vdW heterostructures through the interface engineering of th
247  between Sn(1-) (x) Pb(x) Te and Pb make the heterostructures to be a promising candidate for topolog
248 multaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunne
249  transition, surface engineering and complex heterostructures to enhance the carrier mobility and pow
250  Here we apply this concept to van der Waals heterostructures using the thickness of exfoliated cryst
251  integration of large-area 2D TMDs and their heterostructure variations onto a variety of unconventio
252                Two-dimensional van der Waals heterostructures (vdWHs) have attracted considerable int
253                 Graphene based van der Waals heterostructures (vdWHs) have gained substantial interes
254 s naturally produces two distinct classes of heterostructures, vertical van der Waals (vdW) stacks or
255 structed van der Waals 1T-MoS(2)/C(60) 0D-2D heterostructures via a one-pot synthetic approach for ca
256 d and carrier concentration in van der Waals heterostructures via strain.
257                   First, to characterise the heterostructures, we evaluate the GeTe-Sb[Formula: see t
258                        The BZT/BCT epitaxial heterostructures were grown on SrRuO(3) (SRO) buffered S
259 ing double-layered PEA(2)PbI(4)/PEA(2)SnI(4) heterostructure when shearing-away PEA(2)SnI(4) film ont
260 red (Pb(0.5)Sn(0.5)Se)(1+delta)(TiSe(2)) (m) heterostructure, where m is the varying number of TiSe(2
261 ling compares well with respect to epitaxial heterostructures, where the epitaxy responsible for stro
262 tion to exciton funneling in a MoSe(2)/WS(2) heterostructure, which manifests itself as the photolumi
263 ed basicity is a significant feature in such heterostructure, which spontaneously split water molecul
264 esonances generate pure spin currents in the heterostructures, which are detected by the heavy metal
265 e behavior in amorphous-crystalline 2D oxide heterostructures, which are synthesized by atomic layer
266 l nonlinearities in graphene-insulator-metal heterostructures, which demonstrate an enhancement by th
267 rk for a better control of the growth of vdW heterostructures, which is critical to their large-scale
268 -covalent synthesis of nascent axial organic heterostructures, which promises to deliver useful appli
269                                  These novel heterostructures will find use in bottom cells for stabl
270 reation of an artificially layered nickelate heterostructure with a singly occupied [Formula: see tex
271 he graphene interlayer provides a unique vdW heterostructure with a vertical built-in electric field
272 ischarge constructing lithium peroxide-based heterostructure with band discontinuities and a relative
273 y enabled by the combination of an AlGaN/GaN heterostructure with graphene electrodes facilitates the
274             Moreover, through constructing a heterostructure with graphene oxide, ion selectivity of
275 is made by building the hybrid enzyme into a heterostructure with TiO(2) and graphitic carbon nitride
276                                The thin-film heterostructures with a completely relaxed NiO buffer la
277 -which are created by stacking van der Waals heterostructures with a controlled twist angle(1-3)-enab
278 ate memory cell based on III-V semiconductor heterostructures with a junctionless channel and non-des
279                                 Constructing heterostructures with abundant interfaces is essential f
280 s of traditional colloidal syntheses of nano-heterostructures with atomic precision.
281 ate and tune exotic functionalities of oxide heterostructures with atomic precision.
282  that it is possible to construct foam-based heterostructures with complete photonic band gaps.
283 rein, by artificial design of photosensitive heterostructures with desired band alignment, three orde
284    Herein, the synthesis of NiSe(2) /CoSe(2) heterostructures with different interfacial densities vi
285 ropose intrinsically stable 2D semiconductor heterostructures with doubly-indirect overlapping bands
286  sizable DMI and small skyrmions in TI-based heterostructures with great promise for low-energy spint
287         However, the rational preparation of heterostructures with highly active heterosurfaces remai
288                                    We create heterostructures with incommensurate arrangements of wel
289 ton in WSe(2) monolayers and in WSe(2)/WS(2) heterostructures with large twist angles.
290 c control for the synthesis of axial organic heterostructures with light-harvesting properties.
291  a broad range of TMD/graphene van der Waals heterostructures with novel properties and functionality
292 various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dime
293 of previously inaccessible mesoporous silica heterostructures with separation or catalytic properties
294                                Van der Waals heterostructures with small misalignment between adjacen
295 nism leads to the formation of 2D perovskite heterostructures with spatially resolved coherent interf
296              Hybrid metal/semiconductor nano-heterostructures with strong exciton-plasmon coupling ha
297                         An emerging class of heterostructures with unprecedented (photo)electrocataly
298  of ferroic functionality into van der Waals heterostructures, with stronger resilience toward detrim
299    Tailoring electronic band gaps in coupled heterostructures would permit control of such phenomena
300  Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS(2) /MoS(2) ), and an atomically thin

 
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