ライフサイエンスコーパス: magnetization

1 lectrons are antiaromatic, with the opposite magnetization.

2 charge at defects and a spontaneous in-plane magnetization.

3 he Hall conductivity tensor and a transverse magnetization.

4 a bound pair of counter-rotating vortices of magnetization.

5 hysteresis loops during reversal of in-plane magnetization.

6 he method of their registration by nonlinear magnetization.

7 ets exhibit a finite coercivity and remanent magnetization.

8 ficients and a large electric-field-reversed magnetization.

9 with the cortical map of schizotypy-related magnetization.

10 n polarized, in lock with a negative orbital magnetization.

11 fields could reverse the direction of their magnetization.

12 f these spin currents are collinear with the magnetization.

13 mall current can switch the direction of the magnetization.

14 a small current can generate a large orbital magnetization.

15 ections, but also sharply different level of magnetizations.

16 rature dependent resistivity (~8 GPa) and DC magnetization (~1 GPa) measurements.

17 ansport(1-3), enabling electrical control of magnetization(4,5).

18 agnetic-like hysteresis loop with a remanent magnetization about 0.14 emu/g and coercive field about

19 -linear field dependent effective transverse magnetization and a non-saturating parallel magnetizatio

20 Magnetization and anomalous Hall effect (AHE) measuremen

21 BTO undergoes a crystal transition a massive magnetization and coercivity change is triggered in the

22 en ferroelectrics featuring both spontaneous magnetization and electric polarization are still rare.

23 iral magnets with a simultaneous reversal of magnetization and electric polarization that is still li

24 Electric control of magnetization and exchange bias are demonstrated in all-

25 It is shown that both magnetization and exchange bias are reversibly controlle

26 time-reversal symmetry breaking observed by magnetization and magneto-optical microscopy measurement

27 revealed by mapping of both natural remanent magnetization and of saturation remanence magnetization

28 Meanwhile the remanent magnetization and polarization show opposite variation t

29 romium(III) SIM, exhibits slow relaxation of magnetization and quantum tunneling with a single-ion ma

30 )/dP) becomes 0.91 K/GPa and 0.75 K/GPa from magnetization and resistivity measurements respectively.

31 tions can be controlled by the angle between magnetization and spin of Copper pairs (d-vector), that

32 nsformation temperatures, strain, saturation magnetization and strength) determine their prospects fo

33 a powerful way to build correlation between magnetization and T2 relaxivity of MNPs, especially magn

34 sample with x = 0.3 has the largest remanent magnetization and the smallest polarization.

35 and [Formula: see text] associated with the magnetization and the susceptibility, respectively.

36 states, which drive a change in sign of the magnetization and thus a reversal in the favoured magnet

37 he burst shows that the halo gas has low net magnetization and turbulence.

38 tic diffusion, magnetic convection, residual magnetization, and electromagnetic drift.

39 layer with large anisotropy, high saturation magnetization, and good annealing stability to temperatu

40 and hysteretic magnetoresistance, hysteretic magnetization, and the polar Kerr effect, all of which a

41 The measured magnetization anisotropy can be accounted for with a phe

42 We demonstrate that the polarity and magnetization are coupled in this system with a measured

43 led kagome lattices with strong out-of-plane magnetization are lacking(16-21).

44 ld dependence of both magnetic structure and magnetization, as well as glass formation and irreversib

45 the Dy(III) complex enables a large remnant magnetization at temperatures up to 3.0 K in the magneti

46 near damping prevents excitation of coherent magnetization auto-oscillations driven by the injection

47 rystal growth direction (CGD) along the easy magnetization axis (EMA).

48 gnetic anisotropy, spin-orbit-torque-induced magnetization behaviour has attracted attention because

49 erature correlations emerge in proportion to magnetization below T(C).

50 It is not the magnetization but the magnetic flux density resulting fr

51 and iii) possibility of performing adiabatic magnetization by only manipulating the mutual interactio

52 The manipulation of magnetization by spin-current occurs through the spin-tr

53 fies the phase diagram below half-saturation magnetization by stabilizing a field-induced chiral phas

54 field is consistent with our newly developed magnetization calculation for a Weyl fermion system in a

55 rgy-efficient and deterministic switching of magnetization can be achieved when spin polarizations of

56 ent with spin polarization transverse to the magnetization can be generated within a ferromagnet, des

57 etic resonance imaging maps of intracortical magnetization can be linked to both the behavioral trait

58 ive energy barrier (U(eff) ) for the loss of magnetization can be varied by the substitution pattern

59 Using the bulk magnetization changes (observed via the (1)H NMR shift o

60 urrent simply by use of a FM/NM bilayer with magnetization collinear to the charge current.

61 channel and the iron clusters, with a strong magnetization component along the edge.

62 netic simulations, and identify two possible magnetization configurations: a circulating magnetizatio

63 Origin of the magnetization could be traced to the mixed oxidation sta

64 the ascending and descending branches of the magnetization curve is a robust, reproducible phenomenon

65 ng and descending branches of the hysteretic magnetization curve.

66 Furthermore, our magneto-transport and magnetization data clearly suggest the presence (absence

67 10 kHz) of MWCNTs resulted in slight induced magnetization decrease due to skin effect of the conduct

68 Substrate magnetization-dependent ionization energies and work fun

69 The direction of the magnetization depends on the handedness of the adsorbed

70 polarity of this diode effect depends on the magnetization direction as well as on the carrier type,

71 rate that manipulation of the AFM Neel-order magnetization direction via purely E-field means can pav

72 s of Pook's Pebbles had not only contrasting magnetization directions, but also sharply different lev

73 magnetic materials with a three-dimensional magnetization distribution is important both fundamental

74 Changes in remanent (i.e., residual) magnetization do not correlate with composition, and sho

75 e demonstrated that a change of easy axis of magnetization due to an applied voltage can be directly

76 The in-situ characterization of magnetization during the Li-ion intercalation/deintercal

77 evel coupled simulation framework, including magnetization dynamics and electron transport model, has

78 Low-loss magnetization dynamics and strong magnetoelastic couplin

79 he effect of the interaction strength on the magnetization dynamics at different temperatures in the

80 A deep understanding of nanoparticle magnetization dynamics is fundamental to optimization an

81 Large-amplitude magnetization dynamics is substantially more complex com

82 use time-resolved-vectorial measurements of magnetization dynamics of thin layers of Fe, Ni and Co d

83 We also determine the regime of magnetization dynamics that leads to the greatest perfor

84 ed via a heterodyne detection of the coupled magnetization dynamics using a single wavelength that pr

85 from the measurements suggest 1-D chain-like magnetization dynamics.

86 he external magnetic field and the staggered magnetization enabled by strong spin-orbit interaction.

87 ngs is proposed to reveal that the transient magnetization enhancement is related to the spin-mixed s

88 gnetic field and electric-field switching of magnetization even in multilayer samples.

89 that are based on (13)CO-direct detection of magnetization, exploiting increased sensitivity of cryog

90 dentifying a 25 nm central region of uniform magnetization followed by a larger region characterized

91 se laser provides a new avenue to switch the magnetization for spintronic applications.

92 g the probes of magnetic torque and parallel magnetization for the archetype Weyl semimetal TaAs in s

93 oneycomb due to the nonvanishing net flux of magnetization from adjacent magnetic elements.

94 es a metal complex to catalytically transfer magnetization from parahydrogen to molecules of interest

95 lling factor one reveals a large spontaneous magnetization, further substantiating this picture of a

96 wherein an electric current parallel to the magnetization generates opposite spin-orbit torques on t

97 e angle reveal a continuous variation of the magnetization implying the subtle nature of the implied

98 as allowed visualizing the three-dimensional magnetization in a ferromagnetic thin film heterostructu

99 ich an electric current perpendicular to the magnetization in a magnetic film generates charge accumu

100 netic field of the complex three-dimensional magnetization in a two-phase bulk magnet with a lateral

101 tively destroying the alveolar HXe gas phase magnetization in a volume of interest and monitoring the

102 ace via surface receptors, followed by their magnetization in any desired direction.

103 By controlling the individual layer magnetization in CrI(3) with a magnetic field, we show t

104 The change of magnetization in ferromagnetic (FM) layer induces an ela

105 domains with alternating upward and downward magnetization in La(0.67)Sr(0.33)MnO(3) thin films.

106 new possibilities for optical control of the magnetization in SMMs on femtosecond timescales and open

107 In order to manipulate the magnetization in such thin flakes, a combination of an i

108 Relaxation of magnetization in Tb(2) @C(79) N below 15 K proceeds via

109 family of magnetic materials that can retain magnetization in the absence of a magnetic field below a

110 ng to our ability to selectively control the magnetization in the GaMnAs layer, we are able to manipu

111 ce observed for two opposite currents as the magnetization in the structure switches directions.

112 ld disorder induces a spontaneous transverse magnetization in the XY model.

113 We show that puzzling magnetization increase with decreasing magnetic field am

114 equencies (>10 kHz) contained an exponential magnetization increase.

115 that the saturation (i.e., maximum possible) magnetization increased, and coercivity (i.e., ability t

116 dium concentration increases, the saturation magnetization increases, which is optimal at ~4 at% vana

117 All-optical switching (AOS) of magnetization induced by ultrafast laser pulses is funda

118 everal orders of magnitude larger than known magnetization-induced SHG(8-11) and comparable to the SH

119 Energy-efficient switching of magnetization is a central problem in nonvolatile magnet

120 The observed out-of-plane magnetization is independent of in-plane magnetic field,

121 ane (in-plane) MA in the FM (AFM) phase, its magnetization is more rigid to external E-field.

122 prerequisite for the preservation of Hadean magnetization is the presence of primary magnetic inclus

123 at manifest as domain avalanches and chaotic magnetization jumps exemplify such stochastic motion and

124 erromagnetic materials, the smoothly varying magnetization leads to the formation of fundamental patt

125 Four different magnetization levels are accessible through the appropri

126 a spin through the material with non-uniform magnetization, like helical magnet.

127 The knowledge of how magnetization looks inside a ferromagnet is often hinder

128 the flakes, hysteresis and remanence in the magnetization loop with out-of-plane magnetic fields bec

129 From magnetization M measurements over a wide range of temper

130 A well-saturated magnetization M-H loop with remanent magnetization of 3.

131 rature (T(c) ~ 400 K) and a large saturation magnetization (M(S) ~ 1.8 u(B) f.u.(-1) ) is found in hi

132 Despite its importance, E-field control over magnetization (M) with significant magnitude was observe

133 th respect to the relative alignments of the magnetization, magnetic field, and electrical current, w

134 Using spatially integrating magnetization measurements and spatially resolving nitro

135 High resolution magnetization measurements for this same angle reveal a

136 omprehensive phase diagram based on detailed magnetization measurements of a high quality single crys

137 ectric, piezo-response force microscopy, and magnetization measurements of Pd-substituted room-temper

138 Thermal expansion, specific heat and magnetization measurements of the doped topological insu

139 Electrical transport and magnetization measurements reveal that this heterostruct

140 Magnetization measurements show that polycrystalline sup

141 tron paramagnetic resonance spectroscopy and magnetization measurements, the partial substitution of

142 gating the bulk superconducting state via dc magnetization measurements, we have discovered a common

143 perconductivity via upper-critical field and magnetization measurements- odd-parity pairing can be ar

144 cular dichroism (XMCD) spectroscopy and bulk magnetization measurements.

145 ning calorimetry (DSC) and multiple (thermo) magnetization measurements.

146 lyses, temperature and field-dependent SQUID magnetization methods, as well as (57)Fe Mossbauer, IR,

147 u on the surface leads to an increase in the magnetization near the surface.

148 mas(7,8), including the existence of intense magnetization noise and its characteristic frequency and

149 wth pressure dependence of negative remanent magnetization (NRM) of the above-mentioned thin films.

150 The phototriggered exchange of magnetization occurring in photoswitchable (Z)- and (E)-

151 et with a high 100-s blocking temperature of magnetization of 24 K and large coercivity.

152 th an energy barrier for the reversal of the magnetization of 3.0 K.

153 turated magnetization M-H loop with remanent magnetization of 3.5 emu/cm(3) was observed at room temp

154 netic moment and a large diamagnetic orbital magnetization of a possible topological origin associate

155 Here, the magnetization of a semiconducting 2D ferromagnet, i.e.,

156 2) are sufficient to switch the out-of-plane magnetization of Cr(2) Ge(2) Te(6) .

157 ng a bit is usually achieved by rotating the magnetization of domains of the magnetic medium, which r

158 digital information today is encoded in the magnetization of ferromagnetic domains.

159 n the barrier, and a large proximity-induced magnetization of GdOx, both the magnitude and the sign o

160 The internal magnetization of magnets means that the electrical Hall

161 f 3.6 MJ m(-3) is combined with a saturation magnetization of mu(0) M(s) = 0.52 T at 2 K (2.2 MJ m(-3

162 etosome magnetite crystals contribute to the magnetization of sediments as well as providing a fossil

163 Here we selectively probe the interface magnetization of SrTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 he

164 nce annihilation quanta, by strong nanoscale magnetization of superparamagnetic iron oxide nanopartic

165 where the projection of the TI spin onto the magnetization of the ferromagnet is measured as a voltag

166 torage devices, where strain manipulates the magnetization of the ferromagnetic film.

167 in [Formula: see text] film and decrease the magnetization of the ferromagnetic state, allowing rapid

168 strate how the charge current can switch the magnetization of the ferromagnetic TBG near 3/4 filling

169 non-magnetic (NM) metals can manipulate the magnetization of the FM layer efficiently.

170 on process associated with the time-evolving magnetization of the hot electron sheath.

171 The intrinsic magnetization of the ordered state permits these unusual

172 Notably, the magnetization of the sample can be reversed by applying

173 sly published results on the configurational magnetizations of the model.

174 t strong spin-orbit torque (SOT) on adjacent magnetization, offering great potential in implementing

175 ral metallic ferromagnets leads to a drop in magnetization on a timescale shorter than 100 femtosecon

176 c domains evolving into a single macroscopic magnetization or even a monodomain over surface areas of

177 by the Neel relaxation (reorientation of the magnetization) or the Brownian relaxation (motion of the

178 ral widths were found to depend on substrate magnetization orientation and polarization, which we att

179 While the spheroids' magnetization orientation is consistent with reversed ma

180 These minima arise from the anisotropic magnetization originating from orbital-flops and from th

181 inimize the ellipticity and achieve coherent magnetization oscillations driven by spatially extended

182 bulk acoustic waves in ME antennas stimulate magnetization oscillations of the ferromagnetic thin fil

183 ed, and a reversible variation of saturation magnetization over 10% was observed in both these materi

184 n the creep results, we show that the second magnetization peak coincides with the elastic-to-plastic

185 ent vortex penetration field H(p)(T), second magnetization peak H(smp)(T), and irreversibility field

186 Our systematic magnetization-polarized probe reveals that this bound st

187 ping can be controlled by the ellipticity of magnetization precession.

188 ayer which are detected by measuring the net magnetization precession.

189 prospective study, variable flip angles and magnetization preparation modules were applied to acquir

190 We collected magnetization prepared two rapid acquisition gradient ec

191 (PIB) and (18)F-flortaucipir PET scans and a magnetization-prepared rapid gradient echo MRI scan.

192 edicated head coil, including T1 mapping and magnetization-prepared rapid gradient-echo sequences.

193 ts, and thus plays a significant role in the magnetization process even at high magnetic fields.

194 provides the details of the composition and magnetization profiles and shows that an accumulation of

195 high-remanence particles with reprogrammable magnetization profiles drive the rapid and reversible sh

196 z)La(z)FeO(3) ceramics with z <= 0.15, which magnetization quasi-linearly increases with magnetic fie

197 nd suggest a route to experimentally confirm magnetization-related effects in the high energy density

198 The magnetization relaxation measurements show faster relaxa

199 tribution of chemical exchange to transverse magnetization relaxation rates, R(2).

200 otropic spin-orbit coupling on the transient magnetization remains an open issue.

201 Nanoparticle magnetization response is explored in depth; the effect

202 tions of proton-coupled redox potentials and magnetizations reveal that the Ni-only system features o

203 es substantially and the field dependence of magnetization reveals ferromagnetic-like hysteresis loop

204 of Dy(3+) and results in a larger barrier to magnetization reversal (U), a decrease in U is observed

205 d the IDMI from the heavy metal layer on the magnetization reversal and provide a route to controllin

206 nitio calculations predict that the dominant magnetization reversal barrier of these complexes expand

207 Magnetization reversal characteristics captured by angul

208 Magnetization reversal in this system is explored using

209 rvations show that the SOT driven field-free magnetization reversal is characterized as domain nuclea

210 y reveals that 1 has an effective barrier to magnetization reversal of 1760 K (1223 cm(-1)) and magne

211 in-depth understanding of the perpendicular magnetization reversal process in the presence of an in-

212 tocrystalline anisotropy and facilitates the magnetization reversal starting from the grain boundarie

213 ng an ideal platform to explore the one-step magnetization reversal that is still conceptual in conve

214 Remarkably, strain allows an ultrasensitive magnetization reversal to be achieved, which may promote

215 etic state by acting as nucleation sites for magnetization reversal.

216 electrons per cm(2) are sufficient to induce magnetization reversal.

217 ce plateaus are observed at the locations of magnetization reversals, giving a distinct signature of

218 In-plane magnetization rotation with an electric field across the

219 devices exhibiting electric field-driven Ni magnetization rotation.

220 nt magnetization and of saturation remanence magnetization signatures.

221 illumination becomes sensitive to the medium magnetization, something that is fundamentally impossibl

222 We systematically investigate the magnetization, specific heat and electrical transport do

223 lculations of static spin-spin correlations, magnetization, spin susceptibility, and finite temperatu

224 main that is attributed to variations in the magnetization state across the phase boundary.

225 micromagnetic simulations to reveal that the magnetization state in Sm-Co magnets results from curlin

226 pulating information encoded in the bistable magnetization state of the ferromagnet.

227 E-SHEATH method, sustaining both singlet and magnetization states, thus offering a path to long-lived

228 magnetization configurations: a circulating magnetization structure and a twisted state that appears

229 In thicker samples, however, in which the magnetization structure varies throughout the thickness

230 rt of a thicker BFO layer has a much smaller magnetization, suggesting it still keeps the small cante

231 er, hystereses are clearly observed when the magnetization switches direction in the GaMnAs layer, bu

232 Here, deterministic current-induced SOT full magnetization switching by lateral spin-orbit torque in

233 Current-induced magnetization switching by spin-orbit torque (SOT) holds

234 Magnetization switching by spin-orbit torque (SOT) via s

235 rection of the deterministic current-induced magnetization switching depends on the location of the l

236 We present a study of precessional magnetization switching in orthogonal spin-torque spin-v

237 Local magnetization switching is achieved by adsorbing a chira

238 However, the mechanism of the current-driven magnetization switching is poorly understood as the char

239 Here we demonstrate field-free magnetization switching of a perpendicular magnet by uti

240 Pt with a sign change in accordance with the magnetization switching of the V(TCNE)(x) .

241 role of grain boundaries in the conventional magnetization-switching paradigm of pinning-type magnets

242 newly developed ultrasensitive high-pressure magnetization technique.

243 hly 1% duty cycle on resonance produces more magnetization than constantly being on resonance.

244 onolayer constitute an alternative source of magnetization that can deliver a remarkable boost of sen

245 in the spin structure factor and a staggered magnetization that is close to the ground-state value.

246 pai-electrons are aromatic, with an induced magnetization that opposes the external field inside the

247 m pristine igneous zircon and carry remanent magnetization that postdates the crystallization age by

248 , biocompatible, and possess a remanence and magnetization that rival those of permanent NdFeB microm

249 vices are in the QAH state with well-aligned magnetization, the two-terminal conductance is always ha

250 metry breaking allow an out of plane orbital magnetization to be generated by a charge current.

251 y spaced bands of resonances along different magnetization trajectories, using principles from contro

252 Intracortical profiles were generated using magnetization transfer (MT) data, a myelin-sensitive mag

253 This study used magnetization transfer (MT) imaging to quantify white ma

254 regulation of mood and emotions, using novel magnetization transfer (MT) imaging.

255 Magnetization transfer (MT) modeling combined with UTE-M

256 taset that includes in vivo myelin-sensitive magnetization transfer (MT) MRI scans, we show that this

257 sity and Dispersion (NODDI) and quantitative magnetization transfer (qMT) imaging.

258 ve MRI indices (from diffusion, quantitative magnetization transfer and relaxometry imaging) of tissu

259 g a self-reported questionnaire and measured magnetization transfer as a putative microstructural mag

260 to solvent viscosity, thus strongly favoring magnetization transfer by dipolar cross-relaxation.

261 e forward reaction rate constant using (31)P magnetization transfer magnetic resonance spectroscopy a

262 We have used magnetization transfer NMR experiments to measure the ex

263 aging, including T1 relaxation time (T1) and magnetization transfer ratio (MTR) at 7 Tesla.

264 s, patients with LLD had significantly lower magnetization transfer ratio (MTR), a measure of the bio

265 ion volume and normal-appearing white matter magnetization transfer ratio for all of the patients com

266 An abnormal periventricular magnetization transfer ratio gradient occurs early in mu

267 The magnetization transfer ratio gradient over 1-5 mm differ

268 At 5 years, lesional measures overtook magnetization transfer ratio gradients as significant pr

269 erosis, tissue abnormality-as assessed using magnetization transfer ratio-increases close to the late

270 based on T(1) , T(2) , water diffusion, and magnetization transfer signal, the characteristics of an

271 Background Magnetization transfer-prepared T1-weighted MRI can depi

272 rement of hyperintense substantia nigra from magnetization transfer-prepared T1-weighted MRI helped d

273 Conclusion Magnetization transfer-prepared T1-weighted MRI volumetr

274 prospective study, a high-spatial-resolution magnetization transfer-prepared T1-weighted volumetric s

275 omplex mixtures by nuclear Overhauser effect magnetization transfer.

276 varying the mixing time used for (1)H-(17)O magnetization transfer.

277 alized LC signal intensity values (LC-CR) in magnetization-transfer (MT) images from the Cambridge Ce

278 f explanations-including three-site exchange magnetization transfers between water and the unfolded a

279 effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnA

280 in the GaMnAs layer, but are negligible when magnetization transitions occur in Fe.

281 (0.3)O(3) heterostructures based on a pseudo-magnetization u = m(x)(2 )- m(y)(2).

282 n the magnetic susceptibility and saturation magnetization upon increasing Sn content.

283 proton polarization is converted into (13)C magnetization using a constant adiabaticity field cycle,

284 gular momentum by reversing the direction of magnetization using an external magnetic field.

285 l defect in a ferromagnet at which the local magnetization vanishes.

286 onsible for strong coupling can degrade film magnetization via strain and dislocations.

287 The increase in saturation magnetization was greater for compositionally evolved sa

288 Magnetization was significantly correlated with schizoty

289 ession map colocated with schizotypy-related magnetization were enriched for genes that were signific

290 ckness and an in-plane easy axis (c-axis) of magnetization were grown on a-plane single-crystal sapph

291 amagnetic at room temperature and lose their magnetization when the applied magnetic field is removed

292 magnetization and a non-saturating parallel magnetization when the system enters the quantum limit.

293 state conforms closely to the local CrBr(3) magnetization, while the neutral exciton state remains i

294 s attributed to the H KS and M S (saturation magnetization) whose peaks also occur at the same temper

295 Remarkably, bilayer CrI3 displays suppressed magnetization with a metamagnetic effect, whereas in tri

296 arch on pathways to control the direction of magnetization with an electric field.

297 ilms grown at 150 mTorr exhibits the highest magnetization with T(C) = 340 K as these thin films poss

298 below 15 K proceeds via quantum tunneling of magnetization with the characteristic time tau(QTM) =16

299 We imaged the structure of the magnetization within a soft magnetic pillar of diameter

300 es in the high-temperature limit for nonzero magnetization, within the framework of generalized hydro