ライフサイエンスコーパス: optoelectronic

1 lectrical charge for efficient near-infrared optoelectronics.

2 ctly in core/shell PNCs for high-performance optoelectronics.

3 ey criterion for applications such as chiral optoelectronics.

4 cessing is critical for the manufacturing of optoelectronics.

5 ng of which promises applications in quantum optoelectronics.

6 ch has importance for future applications in optoelectronics.

7 gy pathways in functional nanostructures for optoelectronics.

8 novel candidates for the next generation of optoelectronics.

9 id-state light emitters, photocatalysis, and optoelectronics.

10 ites have achieved impressive performance in optoelectronics.

11 rtant considering their unique advantages in optoelectronics.

12 r electronics, sensors, quantum devices, and optoelectronics.

13 monstration, of metal-free halide perovskite optoelectronics.

14 ble 2D HOIPs with potential applications for optoelectronics.

15 ential of 2D perovskites for next-generation optoelectronics.

16 found interest for nanoscale electronics and optoelectronics.

17 ding spectroscopy, sensing, metasurfaces and optoelectronics.

18 ications in high-performance electronics and optoelectronics.

19 tial for application to electrically tunable optoelectronics.

20 f heterogeneously integrated electronics and optoelectronics.

21 ls could have in fields like biomedicine and optoelectronics.

22 applications ranging from photochemistry to optoelectronics.

23 detection, water monitoring, and sustainable optoelectronics.

24 them is critical for future electronics and optoelectronics.

25 orm the foundation of modern electronics and optoelectronics(1-7).

26 to their applications in light emission(1), optoelectronics(2,3), photon frequency conversion(4,5) a

27 ctional nanoparticles toward next-generation optoelectronic and biomedical devices.

28 itons, which is essential for many fields of optoelectronic and biomedical research.

29 Gallium nitride (GaN), a mature wide bandgap optoelectronic and electronic semiconductor, is attracti

30 Advancement of optoelectronic and high-power devices is tied to the dev

31 ext-generation materials due to their unique optoelectronic and magnetic properties and their potenti

32 xcited hybrid single microcrystal for future optoelectronic and micro-nano photonic integration appli

33 for designing and engineering graphene-based optoelectronic and microelectronic devices.

34 hat limits the performance of many nanoscale optoelectronic and optomechanical devices including nano

35 aals semiconductors have shown extraordinary optoelectronic and photonic properties.

36 in films is of high interest in the field of optoelectronic and photovoltaic devices though challengi

37 radient on the electronic properties in both optoelectronic and photovoltaic devices.

38 on-poor substituents, allowing tuning of the optoelectronic and physical properties of mechanically g

39 ble strategy to fundamentally influence both optoelectronic and supramolecular properties.

40 ortunities for realizing helicity control of optoelectronic and thermal devices.

41 variety of technological applications, from optoelectronic and tunneling devices to composites.

42 The outstanding optoelectronic and valleytronic properties of transition

43 anostructures with colloidal materials-based optoelectronics and access a new level of light manipula

44 2)Te(3) hold great potential applications in optoelectronics and chemical sensing.

45 ary materials recently generated interest in optoelectronics and energy-related applications, alongsi

46 opportunities for exploring condensate-based optoelectronics and exciton-mediated high-temperature su

47 development of Ga(2)O(3) devices and advance optoelectronics and high-power devices.

48 An advantage for optoelectronics and quantum source integration offered b

49 e recently attracted widespread attention in optoelectronics and solar cells.

50 which are potentially useful in carbon-based optoelectronics and spintronics.

51 nt, phosphorescent, electrochemiluminescent, optoelectronic, and catalytic features, their inherent c

52 Thermal, optoelectronic, and electrochemical characterization of

53 crystals hold great promise for electronic, optoelectronic, and quantum devices, but technological i

54 A comprehensive structural, optoelectronic, and theoretical investigation is present

55 n multiple fields, including quantum optics, optoelectronics, and biosensing.

56 er useful applications in energy conversion, optoelectronics, and catalysis.

57 ortance for tailoring its properties towards optoelectronic applications and unlocking its full poten

58 Next-generation optoelectronic applications centered in the near-infrare

59 tform to realize quasiparticle-based tunable optoelectronic applications driven by many body effects.

60 echnology, transparent flexible circuits and optoelectronic applications in general.

61 nd light emitters for numerous synthetic and optoelectronic applications in the near future.

62 tors possess outstanding characteristics for optoelectronic applications including but not limited to

63 or optimizing hybrid perovskites for various optoelectronic applications including solar cells and ph

64 ensates(21) and Bose-Hubbard models(22), and optoelectronic applications of these materials.

65 ng importance of these push-pull systems for optoelectronic applications operating in the wide optica

66 t room temperature promises new photonic and optoelectronic applications such as efficient energy tra

67 or exploring fundamental phenomena and novel optoelectronic applications using layered inorganic-orga

68 and temperature-resistant semiconductor for optoelectronic applications while its electron-rich char

69 are presented for 2D materials in energy and optoelectronic applications, along with promising resear

70 resonators are of interest for high-density optoelectronic applications, filters, dispersion control

71 y excitons, which are the most important for optoelectronic applications, form from higher-energy exc

72 oft luminescent materials are attractive for optoelectronic applications, however, switching dominant

73 d enhanced performance is central to current optoelectronic applications, including imaging, sensing,

74 es hold great promise in numerous aspects of optoelectronic applications, including solid-state light

75 rectional radiation is important for various optoelectronic applications, such as lasers, grating cou

76 Moreover, in the context of optoelectronic applications, the absorber yields absorba

77 zing multinary supranano alloys for advanced optoelectronic applications.

78 high-quality micropillar arrays for various optoelectronic applications.

79 fy candidates with band gaps appropriate for optoelectronic applications.

80 ing performance characteristics for low-cost optoelectronic applications.

81 ecially promising nanomaterial for nonlinear optoelectronic applications.

82 ic chromophores for numerous biochemical and optoelectronic applications.

83 e and electronic properties for photonic and optoelectronic applications.

84 , are extensively studied for electronic and optoelectronic applications.

85 sical phenomena and are of great promise for optoelectronic applications.

86 are desirable for numerous e-textile/e-skin optoelectronic applications.

87 the field of hybrid perovskites spin-related optoelectronic applications.

88 rmance and stability relevant to a number of optoelectronic applications.

89 ich foster their utilization in the emerging optoelectronic applications.

90 ials are promising for future electronic and optoelectronic applications.

91 ons and tunable structures are desirable for optoelectronic applications.

92 l phases in driven optical systems and their optoelectronic applications.

93 g alternatives to lead halide perovskites in optoelectronic applications.

94 well as to identify candidate materials for optoelectronic applications.

95 nable the exploration of exciton physics and optoelectronic applications.

96 rmal management, high-power electronics, and optoelectronics applications.

97 egarded as a promising candidate for various optoelectronics applications.

98 c uniformity of thin-film solution-processed optoelectronics are believed to greatly affect device pe

99 lations, we predicted dramatically different optoelectronic behavior in terms of both DeltaE(ST) and

100 (2D) polymers and characterization of their optoelectronic behaviors are challenges at the forefront

101 We developed a miniaturized optoelectronic biosensor using a vertical cavity surface

102 antly broaden their applications not only in optoelectronics but also in bioimaging and biosensing.

103 for use in 2D semiconductor LEFETs for novel optoelectronics capable of high efficiency, multifunctio

104 that will enable new applications, including optoelectronic, catalysis, sensing, and data encryption.

105 f the prospects of beyond 2D TMD crystals in optoelectronics, catalysis, and quantum information scie

106 (TMD) crystals are a versatile platform for optoelectronic, catalytic and quantum device studies.

107 rated for the chiral MHP, each with distinct optoelectronic character, opening new opportunities for

108 In this paper, we report the distinct optoelectronic characteristics of the porous Si/SiO(x) s

109 These distinct optoelectronic characteristics of the Si/SiO(x) shell ca

110 rted here provide a new material with unique optoelectronic characteristics that is an important anal

111 The (electro)chemical and optoelectronic compatibility between active components a

112 lly controlled and electrically tunable nano-optoelectronic components.

113 This finding enables TMDC monolayers for optoelectronic device applications as the stringent requ

114 e most widely used transparent conductors in optoelectronic device applications.

115 s, and high quantum yield draw attention for optoelectronic device applications.

116 Here we developed a bio-hybrid optoelectronic device consisting of patterned organic po

117 teps for efficient carrier transportation in optoelectronic device fabrication.

118 The compact colour sensitive optoelectronic device represents an easy-to-handle photo

119 entially promising toward the fabrication of optoelectronic devices and applications in bioelectronic

120 f yet, untapped potential for use in organic optoelectronic devices and bioelectronic systems.

121 a variety of applications, such as advanced optoelectronic devices and biomedical sensors.

122 MXene as a solution-processable electrode in optoelectronic devices and provide a guideline for use o

123 e applications of the oriented GNR arrays in optoelectronic devices are also overviewed, especially s

124 w design and development of highly efficient optoelectronic devices based on all-inorganic lead halid

125 Organic optoelectronic devices combine high-performance, simple

126 an alternative way towards highly efficient optoelectronic devices compatible with both Si and III-n

127 ls (NCs) have gained tremendous attention in optoelectronic devices due to their excellent optical pr

128 tal properties and/or their integration into optoelectronic devices has been hampered by issues of co

129 ature's design principles to applications in optoelectronic devices has been limited by the fragility

130 for their application to the improvement of optoelectronic devices in photonic integrated circuits.

131 d perovskites have been employed for various optoelectronic devices including solar cells and light-e

132 ly be exploited for the development of other optoelectronic devices including solar cells, photodetec

133 -scale production of integrated photonic and optoelectronic devices on Si platforms in a cost-effecti

134 tom-up assembly of functional electronic and optoelectronic devices over the past two decades.

135 Advances in the performance of CQD optoelectronic devices require fine control over the pro

136 erformance and stability of perovskite-based optoelectronic devices through supramolecular chemistry.

137 way for additive manufacturing of integrated optoelectronic devices using colloidal QDs.

138 opportunities for low-field, fast-switching optoelectronic devices which go beyond current technolog

139 ll as into the implication of the latter for optoelectronic devices with greater performance.

140 to construct solution-processed large-scale optoelectronic devices with higher reproducibility.

141 The crystal-liquid duality enables optoelectronic devices with unprecedented performance an

142 lived charges are of particular interest for optoelectronic devices, and our results point toward the

143 for novel electromechanical and stretchable optoelectronic devices, and pave a way to control the lo

144 transistors, integrated electronics, rubbery optoelectronic devices, and rubbery sensors are discusse

145 a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in

146 important for electroactive flow devices and optoelectronic devices, but remains a great challenge.

147 enerating new properties for applications in optoelectronic devices, catalysis and separation.

148 InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integra

149 spects for perovskite-based photovoltaic and optoelectronic devices, including non-photovoltaic appli

150 tional transport material for a diversity of optoelectronic devices, including photodetectors, sensor

151 ameters, and integration with human tissues, optoelectronic devices, interconnects/circuits enabling

152 s due to their enormous potential for use in optoelectronic devices, owing to their unique combinatio

153 for the development of future electronic or optoelectronic devices, sound and light propagation cont

154 tensively explored as flexible electrodes in optoelectronic devices, their insufficient electrical co

155 and promising efficiency in photovoltaic and optoelectronic devices, yet fundamental understanding of

156 eir continued design and implementation into optoelectronic devices.

157 ructurally intact Pe-QD solids for efficient optoelectronic devices.

158 nsequence of their considerable potential in optoelectronic devices.

159 oped In(2)O(3) as a transparent electrode in optoelectronic devices.

160 e efficient and stable solar cells and other optoelectronic devices.

161 hickness that may find wide applications for optoelectronic devices.

162 tegies for the realization of complex hybrid optoelectronic devices.

163 n materials types, to water purification and optoelectronic devices.

164 lications, including flexible electronic and optoelectronic devices.

165 rption and hence performance in photonic and optoelectronic devices.

166 xtremely high ambipolar carrier mobility for optoelectronic devices.

167 rs, shape-/function-memory and ultraflexible optoelectronic devices.

168 interesting applications in various organic optoelectronic devices.

169 ter charge-transport and higher stability in optoelectronic devices.

170 ons in the next generation of electronic and optoelectronic devices.

171 nces on electronic and optical properties of optoelectronic devices.

172 rest for their exciting potential in diverse optoelectronic devices.

173 which is essential for their applications in optoelectronic devices.

174 uctors strongly affects their performance in optoelectronic devices.

175 ovskites have become appealing materials for optoelectronic devices.

176 ls a new material platform for near-infrared optoelectronic devices.

177 nts an impediment for the use of CsPbI(3) in optoelectronic devices.

178 nd operational bandwidth of a broad range of optoelectronic devices.

179 es, and potentially other electrotunable and optoelectronic devices.

180 r use of MXenes as TCEs in low-cost flexible optoelectronic devices.

181 ive applications, especially in the field of optoelectronic devices.

182 orage devices, nanofiltration membranes, and optoelectronic devices.

183 alable and high-performance perovskite-based optoelectronic devices.

184 iciency and long-term stability of MHP-based optoelectronic devices.

185 ght-emitting diode (QLED) displays and other optoelectronic devices.

186 onally used in sensing and as a component in optoelectronic devices; the utility of these systems has

187 mbrane protein, has demonstrated exceptional optoelectronic effects in bR/semiconductor hybrid materi

188 cally relevant performance and stability for optoelectronics, energy conversion, photonics, spintroni

189 ll as potential game-changing properties for optoelectronics, energy, and beyond.

190 ve materials while highlighting their use in optoelectronics, erasable inks, or as the next generatio

191 matic exploration of nanoscale photonics and optoelectronics for solid-state refrigeration and on-chi

192 ibers with optical, electrical, acoustic, or optoelectronic functionalities can be produced at scale

193 ves the way to realize future electronic and optoelectronic heterogeneous integrated technology as we

194 a promising approach for tunable electronics/optoelectronics, human-machine interfacing and artificia

195 Here we introduce a miniaturized bio-optoelectronic implant that avoids these limitations by

196 biaryls of pharmaceutical, agrochemical and optoelectronic importance with green scale-up options an

197 sitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation

198 0 nm complementary field-effect transistors, optoelectronic integrated circuits, and enantiomer-recog

199 in producing perovskite nanowires (NWs) for optoelectronics, it remains challenging to solution-prin

200 l over the solid state properties of organic optoelectronic materials is crucial to access real life

201 ntaining hybrid organic-inorganic perovskite optoelectronic materials.

202 ensional perovskites as an exciting class of optoelectronic materials.

203 route to investigate the physics of organic optoelectronic materials.

204 l over the solid state properties of organic optoelectronic materials.

205 ned significant attention as next-generation optoelectronic materials; however, their properties are

206 used for transfer of information in organic optoelectronic microcircuits.

207 to the next generation of integrated exciton optoelectronic nano-devices and applications in light ge

208 Recently, a peptide-based optoelectronic nose which can board up to hundreds of di

209 have emerged as a new material platform for optoelectronics on account of its intrinsic stability.

210 the fabrication of hybrid three-dimensional optoelectronics on the sub-micron scale.

211 nce (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the ma

212 ng to their facile manufacture and excellent optoelectronic performance, including high color purity

213 ale shadow masks, and they exhibit excellent optoelectronic performance.

214 cal role in determining their properties and optoelectronic performance; however, many open questions

215 stors showed that it was difficult to obtain optoelectronic performances in the broad detection range

216 partially responsible for their exceptional optoelectronic performances.

217 variety of applications in microelectronics, optoelectronics, photonics, and energy technologies.

218 rovskites were first introduced to stabilize optoelectronic/photovoltaic devices against moisture, mo

219 orm the foundations of thin, soft electronic/optoelectronic platforms that have unique capabilities i

220 Concretely, an analog optoelectronic processor inspired by biological vision i

221 This optoelectronic processor with PPC memory mimics two core

222 kite NWs array exhibit excellent optical and optoelectronic properties and can be conveniently implem

223 r developing polymer acceptors with improved optoelectronic properties and heralds a brighter future

224 Taken together, emergent optoelectronic properties and higher order superstructur

225 tion of central and terminal units tunes the optoelectronic properties and photovoltaic device charac

226 The unique optoelectronic properties and smooth, rigid pores of mac

227 Next, the optoelectronic properties are summarized, focusing on ch

228 Each colored phase exhibits distinct optoelectronic properties characteristic of 2D superlatt

229 ion and crystal structure, and examining its optoelectronic properties computationally and experiment

230 mmunity due to their outstanding and tunable optoelectronic properties coupled to demonstrations of h

231 Measurements of the optoelectronic properties establish anisotropic carrier

232 d of photocatalysis, owing to their superior optoelectronic properties for photocatalytic reactions,

233 anofibers with precise control and optimized optoelectronic properties is of widespread interest for

234 and dielectric confinement effects on their optoelectronic properties is still in its infancy.

235 ation species is a key factor in determining optoelectronic properties of a material, excited-state d

236 The optoelectronic properties of atomically thin transition-

237 Our results suggest that the attractive optoelectronic properties of CH(3)NH(3)PbI(3) mainly der

238 Ion diffusion affects the optoelectronic properties of halide-perovskites (HaPs).

239 The reported enhancement of the optoelectronic properties of HaP when exposed to small a

240 The electrical and optoelectronic properties of materials are determined by

241 k provides a promising method to enhance the optoelectronic properties of narrow-bandgap perovskites

242 ese effects would provide a tool to tune the optoelectronic properties of organic molecules in respec

243 g strategy to optimize the surface/interface optoelectronic properties of perovskites for more effici

244 ies reveal the essential design features and optoelectronic properties of the device, followed by the

245 ledge-transfer strategy further enhances the optoelectronic properties of the in-flow synthesized QDs

246 More importantly, the optoelectronic properties of the obtained 2D-PPQV1 (E(g)

247 on does not have a significant impact on the optoelectronic properties of the polymers, this molecula

248 The syntheses and optoelectronic properties of two different [2]DBP[12]CPP

249 Integrating and manipulating the nano-optoelectronic properties of Van der Waals heterostructu

250 of understanding the high sensitivity of the optoelectronic properties on the structural tuning in th

251 le properties via structural variation, rich optoelectronic properties owing to their highly delocali

252 These favorable optoelectronic properties suggest CuPbSbS(3) thin films

253 n-shell pai-conjugated molecules can achieve optoelectronic properties that are inaccessible to close

254 ganic hybrid perovskites have electronic and optoelectronic properties that make them appealing in ma

255 r device applications, enabled by control of optoelectronic properties via cation ordering.

256 ons owing to their remarkable electronic and optoelectronic properties(3-5).

257 high-quality perovskite films with superior optoelectronic properties, and improved crystallinity, a

258 dedicated to their electronic structures and optoelectronic properties, as well as a growing number o

259 It shows remarkable optoelectronic properties, including a large exciton bin

260 ojunction, PyTz-COF demonstrated exceptional optoelectronic properties, photocatalytic ability in sup

261 two-dimensional semiconductors with tunable optoelectronic properties, potentially offering unlimite

262 luding a small band gap and favourable cost, optoelectronic properties, processability, and photocorr

263 compounds devoid of B-H bonds show favorable optoelectronic properties, such as luminescence and reve

264 te the structural properties and thereby the optoelectronic properties.

265 operties and only one brief mention of their optoelectronic properties.

266 ue to their distinctive molecular shapes and optoelectronic properties.

267 saturated colour gamuts and other excellent optoelectronic properties.

268 ne FA-alloyed perovskites with extraordinary optoelectronic properties.

269 eering of functional materials with advanced optoelectronic properties.

270 nic devices, as they heavily influence their optoelectronic properties.

271 active due to their unique photophysical and optoelectronic properties.

272 scribed morphologies and tunable or emergent optoelectronic properties.

273 nductivity, biocompatibility, and attractive optoelectronic properties.

274 to nomenclature, constitutional isomers, and optoelectronic properties.

275 ion because of their promising stability and optoelectronic properties.

276 pens new opportunities for tuning perovskite optoelectronic properties.

277 different perpendicular pai-moieties on the optoelectronic properties.

278 of their extraordinary charge transport and optoelectronic properties.

279 tical phonons, thus contributing to enhanced optoelectronic properties.

280 y the distribution and strength of the local optoelectronic property variations in colloidal quantum

281 and metal salts have been used to form high optoelectronic quality semiconductors and have led to hi

282 Metal-halide perovskites transformed optoelectronics research and development during the past

283 Here we show simple two-terminal optoelectronic resistive random access memory (ORRAM) sy

284 the MoS(2) nanostructures demonstrate rapid optoelectronic response to wavelengths from 450 to 750 n

285 rable for applications that include sensing, optoelectronics, robotics, energy conservation, and ther

286 eye architecture could be a useful model for optoelectronic sensing devices that require a large fiel

287 S imager makes an attractive template for an optoelectronic sensing platform.

288 f applications, such as, photovoltaics (PV), optoelectronics, sensors, and bio-electronics.

289 -quality three-dimensional inorganic/organic optoelectronic structures.

290 todetector for positive gate voltages and an optoelectronic synapse at negative gate voltages.

291 oS(2) transistor was employed to emulate the optoelectronic synapse characteristics.

292 Optoelectronic synapses hold the special potential of in

293 The wireless optoelectronic system consists of sub-millimeter-scale l

294 sensors and promises future high-performance optoelectronic systems.

295 ciency antennas for biointegrated electronic/optoelectronic systems.

296 In this study, we develop a novel optoelectronic technique for the characterization of the

297 blends and devices are analysed by transient optoelectronic techniques of carrier kinetics and densit

298 es but also providing a scheme to design new optoelectronics that can surpass the fundamental limitat

299 ances in metal halide perovskites for use in optoelectronics, the fundamental understanding of the el

300 Optoelectronic tuning enables decoupled control over the