ライフサイエンスコーパス: photoluminescence

1 nt of both intervalley and intravalley trion photoluminescence.

2 of GaSb without suppressing room temperature photoluminescence.

3 ver significant insights into the origins of photoluminescence.

4 eld smaller-bandgap domains with red-shifted photoluminescence.

5 mission, contactless electroreflectance, and photoluminescence.

6 lide perovskites shows a peculiar broad-band photoluminescence.

7 ide migration, with corresponding changes in photoluminescence.

8 y transfer is analyzed through time resolved photoluminescence.

9 of 100 picoseconds (ps) and room-temperature photoluminescence.

10 ies, such as enhanced iridescence and chiral photoluminescence.

11 res are measured using polarization-resolved photoluminescence.

12 ization and nanoscale dimensions that confer photoluminescence.

13 rt that Gsp can effectively sensitize Yb(3+) photoluminescence.

14 endent two-photon absorption induced exciton photoluminescence (2PA-PL) from these IO-MQWs, excited b

15 oton absorption (2PA) and two-photon excited photoluminescence (2PEL) - the processes crucial for mul

16 one-dimensional MoS(2) nanocrystals exhibit photoluminescence 50 meV higher in energy than that from

17 by both the magneto-optical Kerr effect and photoluminescence a domain-like spatial topography of co

18 Analysis of combined in situ high-pressure photoluminescence, absorption, and angle-dispersive X-ra

19 Transient photoluminescence and absorption convey ultrafast transf

20 Photoluminescence and absorption spectra collected from

21 honon coupling through temperature-dependent photoluminescence and absorption spectroscopy.

22 to their unique properties in the fields of photoluminescence and catalysis.

23 Here, a new method for stabilizing the photoluminescence and charge state of color centers base

24 ilable for virus detection, including, e.g., photoluminescence and colorimetric sensors, and surface

25 Key processes involved in photoluminescence and electroluminescence in devices as

26 Spatially-resolved photoluminescence and electroluminescence measurements c

27 Photoluminescence and electroluminescence results are th

28 Associated photoluminescence and environmental stability of the thr

29 alpha-CsPbI(3) QDs turned out to retain high photoluminescence and highly close packing in solid stat

30 ductor with a gap of 2.1 eV featuring strong photoluminescence and large exciton binding energy.

31 (pyridin-2-yl)benzo[d]thiazole ligand on the photoluminescence and LEC performance have been examined

32 trap states thus induce local variations in photoluminescence and limit the device performance(6).

33 With VPE, hot photoluminescence and nanosecond photo-Dember effect are

34 c tools-resonant inelastic X-ray scattering, photoluminescence and optical absorption-to characterize

35 Here, the changes in photoluminescence and photoconductance of solution-proce

36 In this work, experimental photoluminescence and photoluminescence decay measuremen

37 eld-dependent variations in the steady-state photoluminescence and photon emission statistics are con

38 firstly characterized through the changes in photoluminescence and Raman spectra of a bare bilayer Mo

39 We combine deep-ultraviolet photoluminescence and reflectance spectroscopy with atom

40 iton modes is evidenced in momentum resolved photoluminescence and reflectivity studies.

41 he most robust Mo(0) complex exhibits stable photoluminescence and remains photoactive after continuo

42 is solution processable, exhibits long-lived photoluminescence, and an optical band gap of 1.6 eV.

43 grown structures are characterized by Raman, photoluminescence, and annular dark-field scanning trans

44 nce, light-intensity-dependent time-resolved photoluminescence, and density function theory calculati

45 sitive X-ray diffraction, spatially resolved photoluminescence, and electron microscopy measurements

46 metal oxide surfaces via UV-vis absorption, photoluminescence, and transient near-infrared absorptio

47 enhanced light-matter coupling, gate-tunable photoluminescence, and unusual excitonic optical selecti

48 f amyloid oligomers at different times using photoluminescence anisotropy.

49 sed emitters for solar-energy conversion and photoluminescence applications.

50 he graph should have read 'FDPP upconversion photoluminescence (AU)' instead of 'TTBP upconversion ph

51 he graph should have read 'FDPP upconversion photoluminescence (AU)' instead of 'TTBP upconversion ph

52 nescence (AU)' instead of 'TTBP upconversion photoluminescence (AU)'.

53 nescence (AU)' instead of 'TTBP upconversion photoluminescence (AU)'.

54 omitant with the gradual appearance of a new photoluminescence band at shorter wavelengths.

55 peak of ZnO and by the formation of intense photoluminescence band, discovered in the visible range

56 experimenting immunoreactions preserve their photoluminescence because of both (i) the distance betwe

57 e cubic Fd3m phase resulting in the observed photoluminescence behavior.

58 uminescence spectra could be explained by CT photoluminescence being dominated by more-bound states,

59 he 2DP layers reveals enhancement of the 2DP photoluminescence by two orders of magnitude in ultrathi

60 The origin of the photoluminescence can vary enormously.

61 At low temperatures, we observe photoluminescence close to the free interlayer exciton e

62 proves our understanding of aggregated-state photoluminescence, contributes to the concept of conform

63 two-dimensional tungsten disulfide excitonic photoluminescence couples into quasi-guided photonic cry

64 his work, experimental photoluminescence and photoluminescence decay measurements are combined with t

65 er diffusion plays a substantial role in the photoluminescence decay.

66 mission rate, favourable modification of the photoluminescence directionality and enhanced optical ex

67 We achieve photoluminescence efficiencies >99% and microsecond life

68 rizations reveal enhanced carrier transport, photoluminescence efficiency, and carrier lifetime of th

69 uniform distribution within regions of poor photoluminescence efficiency, we observe discrete, nanos

70 (tau = 350 mus), featuring highly efficient photoluminescence emission ( = 0.45) due to thermally ac

71 The blue-shifts in the photoluminescence emission and increase in bandgap is ob

72 Angle dependence and thermal stability of photoluminescence emission arising from F8BT membrane la

73 The photoluminescence emission energy mirrors this trend.

74 tion inspired the study reported here of the photoluminescence emission from trap states of the two C

75 Despite the recent progress, origins of the photoluminescence emission in various types of PNCs rema

76 ts in an anomalous temperature dependence of photoluminescence emission leading to a huge enhancement

77 investigated, highlighting a non-Lambertian photoluminescence emission of membrane lattices with res

78 homogeneous Sb composition up to 34 at.% and photoluminescence emission reaching 1.3 microm at room t

79 ic and exhibit unique excitation independent photoluminescence emission, attributed to their single-e

80 ed shift in the band gap and a quench in the photoluminescence emission.

81 The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which

82 inctly different one- and two-photon excited photoluminescence energies: from free-excitons (2.41 eV)

83 We observe a photoluminescence enhancement exceeding 10[Formula: see

84 In this work we demonstrate strong photoluminescence enhancement in low Sn content Ge(0.94)

85 2) with high emission efficiency, results in photoluminescence enhancement, and type II in WS(2) /PbI

86 e I electronic alignment as demonstrated via photoluminescence excitation spectroscopy enhancement of

87 Using photoluminescence excitation spectroscopy, we identify a

88 sonant peak of quantum dots appearing in the photoluminescence excitation spectrum, unambiguously con

89 Both temperature dependent photoluminescence experiments and DFT calculations are p

90 of this enhancement through low temperature photoluminescence experiments.

91 which is further supported by high-pressure photoluminescence experiments.

92 ese nanomaterials such as strong and tunable photoluminescence for use in fluorescence bioimaging and

93 on and could efficiently distinguish between photoluminescence from beta-actin-specific RCA and DNA p

94 ituted ligands to show sky-blue to deep-blue photoluminescence from charge-transfer excited states.

95 We measure increased photoluminescence from divacancy ensembles by up to thre

96 We use photoluminescence from exciton states pinned to close-cr

97 We observed enhanced photoluminescence from the 2D photonic crystal and the 1

98 escent europium(III) complexes which exhibit photoluminescence from the Eu(III) center following ener

99 elengths between 1000 and 1500 nm and narrow photoluminescence full-width at half-maximum (FWHM) of a

100 which typically give dissymmetric factors of photoluminescence (g(PL) ) less than 10(-2) .

101 g to the inversion symmetry in bilayers, the photoluminescence helicity should no longer be locked to

102 ty of approximately 20 nm using an optimized photoluminescence imaging method.

103 In contrast to Raman and photoluminescence imaging, third-harmonic generation mic

104 confirmed by Raman mapping and hyperspectral photoluminescence imaging.

105 In addition, we observe strong photoluminescence in few-layer phosphorene at energies t

106 of multiphoton excitation and the resulting photoluminescence in gold nanoparticles, both plasmonic

107 4a, 4b, and 5 show photoluminescence in the blue-green region of the spectr

108 ture of 4f-4f excitation responsible for the photoluminescence in these Eu(III) coordination complexe

109 A cations result in significant decreases in photoluminescence intensity and lifetime, consistent wit

110 luminescent uranium organic framework, whose photoluminescence intensity can be accurately correlated

111 Here we measure the far-field photoluminescence intensity distribution of bulk InSe an

112 thermore, two dimensional spatially resolved photoluminescence intensity distribution study has been

113 experiment, we demonstrate modulation of the photoluminescence intensity from nearly fourfold quenchi

114 reover, higher-order power law dependence of photoluminescence intensity is observed on both the GaAs

115 The photoluminescence intensity of the patterned FRET sensor

116 The quadratic power law dependence of the photoluminescence intensity, together with the ground-st

117 characterized GADIPY displays intense green photoluminescence (lambda(em) = 505 nm, Phi(em) = 0.91 i

118 process, determined by temperature-dependent photoluminescence, light-intensity-dependent time-resolv

119 rlayer carrier transfer and reduction of the photoluminescence linewidth, and could enable the explor

120 Raman and photoluminescence mapping studies showed that a wide ran

121 by employing both steady-state and transient photoluminescence mapping, it is found that in-plane exc

122 Excitation spectra and time-resolved photoluminescence measurements confirm that Yb(3+) is bo

123 cally patternable films, while time-resolved photoluminescence measurements provide insight into the

124 Time-resolved photoluminescence measurements reveal an approximate 10

125 Time- and spectrally resolved photoluminescence measurements reveal that photoexcited

126 Photoluminescence measurements show one main emission pe

127 In this sense, voltammetric and photoluminescence measurements were conducted and the ex

128 performing combined transient absorption and photoluminescence measurements, both with sub-picosecond

129 we use intensity-dependent, low-temperature photoluminescence measurements, combined with kinetic mo

130 Through normally incident micro-photoluminescence measurements, we observe absorption an

131 strain used in correlation with microscopic photoluminescence measurements.

132 gths, all from straightforward time-resolved photoluminescence measurements.

133 ow a multispectral synchrotron-based deep-UV photoluminescence microimaging technique can be used to

134 on study has been carried out using confocal photoluminescence microscope throughout the nanorod bund

135 halide perovskite nanoplates using confocal photoluminescence microscopy.

136 We first demonstrate that the Yb(3+) photoluminescence of a Yb(3+) MOF, Yb-NH(2)-TPDC, can be

137 Modulation of photoluminescence of atomically thin transition metal di

138 The photoluminescence of MoS(2) is enhanced in MoS(2) /PbI(2

139 Based on the photoluminescence of MoS(2), the hybridization events we

140 his degradation gives rise to strong visible photoluminescence of NMP.

141 y silent chiral phonon enables the intrinsic photoluminescence of the dark-exciton replica in monolay

142 Here we report a study of the photoluminescence of these dots by using direct two-phot

143 ansfer, GOMs are conceived to deactivate the photoluminescence of those PLBs that are not experimenti

144 on the emission of upconverted, anti-Stokes photoluminescence of trivalent ytterbium ions doped with

145 estigate two-photon-absorption (TPA)-induced photoluminescence of two new MOFs based on a donor-accep

146 Enhanced photoluminescence on the order of magnitude larger than

147 d measurements of short-wave infrared (SWIR) photoluminescence on the submicrosecond to millisecond s

148 rption spectroscopy but also includes Raman, photoluminescence, or fluorescence spectroscopy.

149 of the exciton states and linearly polarized photoluminescence originate.

150 erature observations of strongly anisotropic photoluminescence patterns as a function of applied magn

151 als unexpectedly exhibit a blue shift in the photoluminescence peak that can revert back in the dark,

152 This leads to a series of photoluminescence peaks as valley phonon replicas of dar

153 This splitting originates from a photoluminescence (PL) active O coordinated Er centre wi

154 'A(n-1)Pb(n)I(3n+1) compounds exhibit strong photoluminescence (PL) at room temperature.

155 In the present paper we report photoluminescence (PL) based immunosensor for the detect

156 roach to generate a two-photon up-conversion photoluminescence (PL) by directly exciting the gap stat

157 wavelength, and intermittency of solid-state photoluminescence (PL) can be used to probe chemical tra

158 btained to realize a TADF emitter capable of photoluminescence (PL) close to 1000 nm.

159 tionally, we provide the first time-resolved photoluminescence (PL) data for any corannulene-based co

160 f an archetypical 3D TI, [Formula: see text] Photoluminescence (PL) emission arising due to recombina

161 Here we report photoluminescence (PL) emission from tBLG after resonant

162 pendent studies indicated that the broadband photoluminescence (PL) from (110) perovskites arises fro

163 found that 1 exhibited narrow, near-infrared photoluminescence (PL) from a spin-singlet excited state

164 s triplets can play in P3HT by analyzing the photoluminescence (PL) from isolated single-chain aggreg

165 Photoluminescence (PL) imaging and the spatial-resolved

166 A rapid and low cost photoluminescence (PL) immunosensor for the determinatio

167 ed device performance, both the steady-state photoluminescence (PL) intensity and the time-resolved P

168 The long photoluminescence (PL) lifetime enables time-gated (TG)

169 The emission has a long photoluminescence (PL) lifetime of 582 ns, while the int

170 Here, a photoluminescence (PL) measurement of single-crystal BAs

171 High spatial-resolution confocal photoluminescence (PL) measurements have been performed

172 Time-resolved micro photoluminescence (PL) measurements have been performed

173 Photoluminescence (PL) measurements have demonstrated th

174 Despite the strong excitonic photoluminescence (PL) of monolayer transition metal dic

175 Here, we show that the photoluminescence (PL) of QD bioconjugates can also be m

176 ll-inorganic CsPb(2) Br(5) , its bandgap and photoluminescence (PL) origin have generated intense deb

177 the "S-shape" temperature dependence of the photoluminescence (PL) peak energy, and non-exponential

178 -based small/wide angle X-ray scattering and photoluminescence (PL) probes, the NC-SL structural tran

179 phase, there are very limited reports on the photoluminescence (PL) properties of ZB InAs NWs.

180 ional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric

181 terostructure, which manifests itself as the photoluminescence (PL) quenching to PL enhancement trans

182 Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is

183 Polarized photoluminescence (PL) reveals that AB stacking possesse

184 The morphology, photoluminescence (PL) spectra and UV-vis spectra of the

185 reasing x as evidenced by UV-vis absorption, photoluminescence (PL) spectroscopies, thermal analysis,

186 Cryogenic single-particle photoluminescence (PL) spectroscopy has been used with g

187 h different wavelengths was calculated using photoluminescence (PL) spectroscopy.

188 chieved as revealed by polarization-resolved photoluminescence (PL) spectroscopy.

189 ology, optical bandgap (1.88 +/- 0.5 eV) and photoluminescence (PL) spectrum of CdSe QDs with a peak

190 Photoluminescence (PL) studies show a correlation betwee

191 Janus monolayers exhibit unique blueshift in photoluminescence (PL) upon compression, which is in con

192 Photoluminescence (PL) was used to estimate the concentr

193 Photoluminescence (PL) was used to estimate the concentr

194 ced by these new materials are studied using photoluminescence (PL), and we find that 1 and 2 act as

195 Raman spectroscopy, photoluminescence (PL), x-ray photoelectron spectroscopy

196 g in unique modulation patterns of the SWCNT photoluminescence (PL).

197 both antiferromagnetism (AFM) and strong red photoluminescence (PL).

198 s <250 mT, resulting in an enhancement of QD photoluminescence (PL).

199 In-free compositions that exhibit efficient photoluminescence (PL).

200 rong second-harmonic generation and enhanced photoluminescence, plates with hexagonal dislocation spi

201 er effect of the coupling is observed in the photoluminescence polarisation dependence and in the Ram

202 llowing, prepared S,N-GQDs were applied as a photoluminescence probe for detection of ascorbic acid (

203 The photoluminescence properties are systematically and pred

204 Here, we report on the photoluminescence properties of a series of phenyl-ring

205 shown that these defects also influence the photoluminescence properties of GaAsBi alloys.

206 It is proposed that this sensitivity of photoluminescence properties of lead-white pigments coul

207 urtzite) plays a key role in determining the photoluminescence properties of these giant QDs, with on

208 efficient bluish white-light emissions with photoluminescence quantum efficiencies of approximately

209 mechanism as a function of layer thickness, photoluminescence quantum efficiency and absorption coef

210 hree-dimensional perovskites, which enhances photoluminescence quantum efficiency from 1.1% to 19.8%.

211 e PeLEDs by overcoming a major hurdle of low photoluminescence quantum efficiency in wide-bandgap per

212 The matrix-protected CQDs show a photoluminescence quantum efficiency of 30 per cent for

213 ns led to near-perfect white emission with a photoluminescence quantum efficiency of around 73 %.

214 e with a high radiative efficiency, with the photoluminescence quantum efficiency of the film under s

215 ibits green emission peaked at 517 nm with a photoluminescence quantum efficiency of ~ 95%.

216 ) chloride into the mixture further enhances photoluminescence quantum efficiency to 49.7%.

217 nic charge-extraction layers exhibiting high photoluminescence quantum efficiency.

218 transport properties, including outstanding photoluminescence quantum yield (PLQY) and tunable optic

219 shaped nanocrystals without compromising the photoluminescence quantum yield (PLQY) are reported.

220 Photoluminescence quantum yield (PLQY) measurements show

221 k(rad) + k(nonrad), we compute a theoretical photoluminescence quantum yield (PLQY) of 53%.

222 y broad temperature range (145-415 K) with a photoluminescence quantum yield (PLQY) of at least 20.3%

223 the pattern profile while maintaining a high photoluminescence quantum yield (PLQY) of the patterned

224 derlying structural factors that dictate the photoluminescence quantum yield (PLQY) of these material

225 concentrators (LSCs) featuring high absolute photoluminescence quantum yield (PLQY), low reabsorption

226 tructural versatility, tunable bandgap, high photoluminescence quantum yield and facile chemical synt

227 g this system, we reveal the scaling laws of photoluminescence quantum yield and radiative lifetime w

228 The abrupt increase in photoluminescence quantum yield at excitation energy abo

229 ned inorganic perovskite films with improved photoluminescence quantum yield by introducing trifluoro

230 ost-perovskite type chains exhibits a record photoluminescence quantum yield for hybrid lead halides.

231 30% for monolayer) at resonance, as well as photoluminescence quantum yield in the range of 60-100%.

232 u(3)) exhibits a relatively high solid-state photoluminescence quantum yield of 44%.

233 dination polymer with an impressive external photoluminescence quantum yield of 75.4(9)%.

234 The absolute photoluminescence quantum yield of the PDS fabricated us

235 cubic crystal structure, a 1.6-fold enhanced photoluminescence quantum yield, and a longer emission l

236 ies, low densities of deep trap states, high photoluminescence quantum yield, and wide color tunabili

237 Recent efforts in improving the photoluminescence quantum yield, the chemical stability

238 in bandgap is observed while retaining high photoluminescence quantum yield.

239 optical spectra, while maintaining the high photoluminescence quantum yields (>50%), sharp absorptio

240 and lighting applications due to their high photoluminescence quantum yields (PLQY).

241 onstrated white-light emission with improved photoluminescence quantum yields (PLQYs).

242 Their high photoluminescence quantum yields along with the small De

243 mensional perovskites that exhibit 97 +/- 3% photoluminescence quantum yields and stabilities that ex

244 These materials demonstrated photoluminescence quantum yields as high as 0.89 in tolu

245 e)M(Cz) complexes examined here display high photoluminescence quantum yields of 0.8-1.0.

246 The NHC-capped QDs maintain photoluminescence quantum yields of up to 4.2 +/- 1.8% f

247 The photoluminescence quantum yields range from 40 to 52%.

248 thus produced are emissive in solution, with photoluminescence quantum yields reaching 72%.

249 eir large absorption cross-sections and high photoluminescence quantum yields, lead halide perovskite

250 sing apparent lifetime for samples with high photoluminescence quantum yields.

251 molecular bio-probes; yet, their inefficient photoluminescence (quantum yield ~1%) drives requirement

252 ow both enantioselective electrochemical and photoluminescence quenching capabilities of a graphene-r

253 a breakthrough in immunosensing based on the photoluminescence quenching capabilities of graphene oxi

254 er with excellent film-forming and over 99 % photoluminescence quenching efficiency on perovskite, th

255 d in MoS(2) /PbI(2) stacks, while a dramatic photoluminescence quenching of WS(2) and WSe(2) is revea

256 , and subsequently leads to a very effective photoluminescence quenching through phonon-assisted rela

257 GO was also attached to aptamers and photoluminescence quenching was obtained through FRET.

258 h wider energetic distribution, and stronger photoluminescence quenching.

259 es suitable for light harvesting, results in photoluminescence quenching.

260 on potentials, which lead to a high yield of photoluminescence-quenching hole trapping on the EDL.

261 sive investigations on temperature-dependent photoluminescence, Raman scattering, and X-ray diffracti

262 r 20 min from sample addition, with a simple photoluminescence reader.

263 ticides and herbicides did not contribute to photoluminescence recovery due to lack of binding affini

264 diazinon to the bioconjugates containing GO, photoluminescence recovery was detected due to detachmen

265 c cations do not alter the absorption or the photoluminescence response of CH(3)NH(3)PbI(3), beyond t

266 Interestingly, the photoluminescence responses of GO and SWCNTs to enzymati

267 ering structure are correlated with enhanced photoluminescence responses of optically-active SiC quan

268 d Ta2O5 nanostructures were characterized by photoluminescence, scanning electron microscopy, UV-Visi

269 Interestingly, this reversible photoluminescence shift can also be induced by electrica

270 generates an emerging phenomenon: a magneto-photoluminescence signal in Poly(9,9-dioctylfluorene-alt

271 ocopherol, did not interfere with the Yb(3+) photoluminescence signal.

272 Differences between electroluminescence and photoluminescence spectra could be explained by CT photo

273 Fitting of the calculated photoluminescence spectra to reproduce our experimental

274 demonstrated, which simultaneously collects photoluminescence spectra, photocurrent transients, and

275 spectroscopy, UV-vis absorption spectra, and photoluminescence spectra.

276 Photoluminescence spectroscopy and computational analysi

277 wo complementary approaches: single-nanotube photoluminescence spectroscopy and ultrafast 2D correlat

278 ysis by X-ray photoelectron spectroscopy and photoluminescence spectroscopy revealed an Mg ionization

279 Photoluminescence spectroscopy reveals long-term, stable

280 aviolet-visible diffuse reflectance spectra, photoluminescence spectroscopy, transient photocurrent s

281 and electron microscopy as well as Raman and photoluminescence spectroscopy.

282 s intermittently interrogated with Raman and photoluminescence spectroscopy.

283 of two-dimensional (2D) COFs in solid-state photoluminescence, stimuli-responsive COFs, gas storage,

284 foliation, surface functionalization, strong photoluminescence, strong optical absorption in the near

285 , the results presented here demonstrate how photoluminescence studies can probe surface defects in C

286 In this work, we perform photoluminescence studies on the MPO-catalyzed oxidation

287 Magneto-photoluminescence studies reveal that the triplet-to-sin

288 s, as evidenced by electron-only devices and photoluminescence studies, respectively.

289 quantum dots in thermally activated delayed photoluminescence (TADPL) schemes and to identify import

290 review, we highlight the different types of photoluminescence that may be attained from layered hali

291 Inaccessible via photoluminescence, these states are often probed using p

292 mploying a variety of analytical techniques (photoluminescence, time-of-flight secondary ion mass spe

293 ment produces a hypsochromic (blue) shift in photoluminescence upon the binding of albumin in clinica

294 entified that the "turn-on" of Yb-NH(2)-TPDC photoluminescence was due to the "antenna effect" of Gsp

295 ergy, and polarization parameters, different photoluminescence wavelengths are selected to concurrent

296 ters, we investigate crystallization-induced photoluminescence weakening and reveal that the shorteni

297 Crystallization-induced photoluminescence weakening was recently revealed in ult

298 imity effects between MoSe(2) and CrBr(3) in photoluminescence, whereby the valley polarization of th

299 ortening of interparticle distance decreases photoluminescence, which is further supported by high-pr

300 The C-dots showed strong photoluminescence with a quantum yield of 4%.