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1 hich he called a memristor (short for memory resistor).
2 e induced airflow limitation with a Starling resistor.
3 ing to determine a microfluidic network as a resistor.
4 or-metal devices are more than just a memory-resistor.
5 an electronic capacitor discharged through a resistor.
6 ctrical properties of a memory element and a resistor.
7  temperature was monitored using a thin-film resistor.
8 duced by inspiring against a calibrated flow resistor.
9  72 trials of breathing against the external resistors.
10  connexin40 (Cx40) gap junctions to upstream resistors.
11 rication, or loss of power through pull-down resistors.
12 it of thermalized charge carriers in passive resistors.
13 istics of the memristive device and external resistors.
14 amic resistances using external hydrodynamic resistors.
15 lymphatic smooth muscle that act as Starling resistors.
16 sisting of two miniature relays, diodes, and resistors.
17 cycling utilizes screen-printed graphite ink resistors.
18 S) materials that are frequently used with a resistor (1S1R) in memory devices have been found to sho
19 ic spikes within a hybrid one-transistor/one-resistor (1T1R) memristive synapse.
20 istic of this molecular memristor (a 'memory resistor', a globally passive resistive-switch circuit e
21 deled using lumped components that include a resistor, a capacitor, and a current source representing
22 usion as a capacitor being charged through a resistor after the rapid imposition of a voltage change.
23 anding region, and five outlets with fluidic resistors, allowing for inertial focusing and ordering,
24                       The addition of serial resistors allows us to quantify AC currents passing thro
25                  It consists of a capacitor, resistors, amplifiers, logic circuitry and electronicall
26 tor, a linear passive capacitor, a nonlinear resistor and a thermistor, that is, a nonlinear "locally
27 , representing the electrochemical cell as a resistor and capacitor in series.
28 hotopores' that transition between iontronic resistor and diode modes in response to irradiation at o
29 very component (channel, interconnects, load resistor and source/drain/gate electrodes) fabricated fr
30 nce between the power dissipated in the load resistor and the power supplied by the secondary voltage
31 resent screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substra
32 amplifiers were modified by configuration of resistors and capacitors to enable fast response, and a
33 lect small capacitance nodes in a network of resistors and capacitors.
34                                        These resistors and diodes exhibit temperature-independent cha
35 ication of digital logic circuits comprising resistors and diodes made from protein complexes and wir
36 spiratory system in the form of a network of resistors and fractional capacitors.
37 minimal equivalent circuit) comprised of two resistors and one capacitor.
38 ately measure the complex voltage across the resistor (and hence current through the device and dropl
39 double layer capacitor, an electron-transfer resistor, and a Warburg impedance around each electrode,
40  while patients breathed through inspiratory resistors, and diaphragmatic contractility was quantifie
41 as the wafer level chip scale packages, chip resistors, and light-emitting diodes, can be reflow-sold
42                           Moreover, two flow resistors are included to ensure an equal flow of analyt
43                       In this work, synaptic resistors are reported to emulate the analog convolution
44                        Printed inductors and resistors are then incorporated into a step-up voltage r
45 ms as they often rely on a memristor (memory resistor), are an emerging technology inspired by adapti
46 ions using an electronic circuit analog with resistors arranged in a hierarchical reticulate network
47 cal analytical approach from highly parallel resistor arrays, we examine the cells and ensemble struc
48 ers, yielding multifunctional single-sensing resistors as well as fully monolithically integrated e-s
49 f the central bridge region of the suspended resistor at a rate of 1.8 frames/s by using epi-illumina
50                                     We use a resistor-based approach to model multiphase mass transfe
51 ormed with kilohertz frequency inputs, using resistor-based logic in a memristor crossbar with FET in
52 Furthermore, we demonstrate one-selector-one-resistor behavior in a tandem of two identical Te-based
53 ge is the consideration of the antidiffusion resistor between the two auxiliary gas lines of the Dean
54 e nanoscale thermal expansion of a suspended resistor both theoretically and experimentally and obtai
55 ng glucose flux-limiting membrane; and (4) a resistor bridging the anode and cathode.
56 r experiments show that our variable thermal resistor can precisely stabilize the operating temperatu
57 he troublesome observation that the membrane resistor-capacitor filter could limit high-frequency aco
58       However, somatic motility can overcome resistor-capacitor filtering by the basolateral membrane
59 ial longitudinal element approach leads to a resistor-capacitor model, which can be used to simplify
60 ich can be effectively represented by an RC (resistor-capacitor) circuit.
61 rth electrical circuit element complementing resistors, capacitors and inductors.
62 ifferent functional heterostructures such as resistors, capacitors and photovoltaics.
63                       The two-transistor-one-resistor cells provide strong cell current modulation ca
64 amental limitations of computers, a synaptic resistor circuit performs speech inference and learning
65 ergy is well modeled by a parallel capacitor resistor circuit with a time constant of 5.3 ms.
66 ed Super-Turing AI model based on a synaptic resistor circuit, capable of concurrent real-time infere
67 hole-cell currents were modeled according to resistor-circuit analysis and two correction formulas fo
68                                     Synaptic resistor circuits enable efficient and adaptive Super-Tu
69                The SiOx -based one diode-one resistor device system has promise to satisfy the prereq
70 DAC" (named for its similarity to a weighted-resistor digital-to-analog converter) is capable of cont
71 e consistent with a model where the adaptive resistor dynamically changes its resistance during disch
72 ors at any operating point without using any resistors, especially at the peak power point to maximiz
73 on application of a 2 V step in voltage, the resistor exhibited a steady-state increase in resistance
74 mplements the set of capacitor, inductor and resistor) exhibits eight recurrent and history-dependent
75 t abundant (24)Mg isotope and a 10(13) Omega resistor for the (26)Mg isotope.
76 topes and up to twofold using a 10(11) Omega resistor for the most abundant (24)Mg isotope and a 10(1
77                 Nanoscale ionic programmable resistors for analog deep learning are 1000 times smalle
78 e improved up to fourfold using 10(13) Omega resistors for the monitoring of both the (24)Mg and (26)
79 resistance, are strong evidence for Starling resistor forces (venocompression) rather than active ven
80       We tested the hypothesis that Starling resistor forces render PAOP inaccurate as an index of le
81 d to the ground using 50 [Formula: see text] resistors from both ends, except for one microstrip line
82                            A Force Sensitive Resistor (FSR) sensor and an ultrasonic sensor continuou
83 red primarily with their diaphragm through a resistor, generating (i) 60 % maximal inspiratory mouth
84             The ultra-compact 1 Transistor-1 Resistor implementation of oscillator and bidirectional
85 nometer level relative height changes of the resistor in a temporally and spatially resolved manner.
86 on, and it can be directly used as a tunable resistor in fluidic setups.
87 r a solvated, ion-filled nanopore is often a resistor in parallel with a capacitor.
88 tributions: (1) modelling of the switch as a resistor in parallel with a current-controlled current s
89 -photon avalanche diodes is to use a passive resistor in series with it.
90 t intensity varies through a parallel set of resistors in electric circuits.
91 porous electrodes cause them to perform like resistors in filter circuits that remove ripple from rec
92 uctance of the channel arises in effect from resistors in series, one from the binding region, one fr
93 ion before and after insertion of additional resistors in series.
94  uncharged regions of the pore as electrical resistors in series: the AMFE is produced by these regio
95                                          The resistors-in-series model provides a fundamentally diffe
96 geneous set of tile types, which may include resistors, inductances and/or capacitors.
97 ulated by 'lumped' circuit elements, such as resistors, inductors and capacitors.
98 ut any prior learning, a circuit of synaptic resistors integrating ferroelectric HfZrO materials was
99 of systems including current fluctuations in resistors, intensity fluctuations in music and signals i
100  CD8alpha expression on NK cells in putative resistors (Interferon gamma release assay negative; IGRA
101 initial steady-state voltage into a constant resistor is dependent on the past charging voltage profi
102 ontrolled switches and uses thermal noise in resistors (Johnson noise) to pump heat.
103 min(-1), and to be operated with an external resistor less than 30 Omega.
104                                     We use a resistor made of a FeRh AFM, which orders ferromagnetica
105  a single RRAM cell can operate as an analog resistor, meaning that it can be used in more novel comp
106 rrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits.
107                        However, a multiphase resistor model based on the physical and chemical proces
108                                          The resistor model is applied, accounting for the amorphous
109                                   A parallel resistor model is employed to discern the signal of the
110 ic disorder and use a phenomenological three-resistor model to account for their various features.
111      Here we present a Mott two-spin current resistor model which takes into account these parameters
112            Embedding leaf morphogenesis as a resistor network is significant in the optimization of a
113 sing a phenomenological semiclassical random resistor network model.
114 gn features: short length of the drift tube, resistor network of the drift tube, tristate ion shutter
115 e, we report a fullerene-decorated PdCo nano-resistor network sensor that integrates nanostructuring,
116 d, the defected NP SLs were assembled into a resistor network with more than 10(4) NP SLs, thus repre
117  fibers and the tissues was modelled using a resistor network, thus enabling distance-dependent ephap
118  adequate alternative, the concept of random resistor networks is suggested, with resistances describ
119 n equivalent circuit, consisting of an ohmic resistor of the electrolyte between two electrodes and a
120 wed that each leaflet acts as an independent resistor of water permeation.
121  cell carcinoma (ccRCC), but the drivers and resistors of the PD-1 response remain incompletely eluci
122 supercapacitors, conductive tracks and ohmic resistors on untreated plastic and paper substrates, wit
123 ield-effect transistors (FETs) and diffusion resistors, onto flexible plastic substrates.
124 om MFCs has been demonstrated using external resistors or charge pumps, but such methods can only dis
125 s not driven by phage alone, lingering phage resistors, or a sublethal inoculum.
126                                 While memory resistors, or memristors, have been widely reported, oth
127 assive components-inductors, capacitors, and resistors-perform functions such as filtering, short-ter
128                       The impact of a series resistor (R(S)) on the variability and endurance perform
129 an equivalent circuit consisting of a series resistor (R(S), which includes the SAM-electrode contact
130 urface charge profile of the nanopore, ohmic resistors, rectifiers, and diodes can be made.
131 sistance (AMR) as giant as ~160% in a simple resistor structure made of AFM Sr(2)IrO(4) without auxil
132                        Memristors are memory resistors that promise the efficient implementation of s
133 he fundamental passive circuit elements: the resistor, the capacitor and the inductor.
134 t elements, such as inductors, capacitors or resistors, the design and realization of a quantum memri
135 tively connecting or disconnecting a matched resistor to an antenna, the system can achieve data rate
136                  Adding only a single series resistor to existing AC droplet actuation circuits, the
137 d modulates the Johnson (thermal) noise of a resistor to transmit information bits wirelessly.
138 nge the position of temperature compensation resistors to address errors caused by the temperature fi
139                          From temperature of resistors to electrons breaking into fractional quasipar
140 rcuit to which was added a range of external resistors to mimic the mechanical load of mild asthma.
141       We used the Thevenin model of Starling resistors to represent the intra-extra-cranial compartme
142 ture and displacement field of the suspended resistor under a direct current (DC) input voltage.
143     Output was independent of the connecting resistor values over the range from 0 to 10 MOmega.
144  systems, spanning ceramic voltage-dependent resistors (varistors), oxide tunnel junctions and charge
145 pplied force was determined using a variable resistor walkway to monitor quadruped gait asymmetries.
146 it analysis indicated that electron transfer resistor was effective with the increase in impedance af
147          A 6 V battery with 1 kOmega ballast resistor was used to treat the biofilms for 1 h or 24 h.
148 n analytic theory of the 'memristor' (memory-resistor) was first developed from fundamental symmetry
149 sformed, rectified (DC) supply with a series resistor (where a significant fraction of the power is w
150 ion detection of the voltage drop across the resistor which filters out noise, enabling high-resoluti
151                            The highest value resistor (which occurs in the depletion zone) limits the
152 ations (Johnson noise) that exist across any resistor, which allow the temperature to be determined.
153 insic PEEP was generated with a fixed linear resistor, which was inserted in the expiratory circuit t
154 s reveal that a minimal network of nonlinear resistors, which we have termed a 'fluidic memristor', d
155                       Commonly used external resistors will not harvest any usable energy, so energy-
156 ss this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch
157       As an example, using a Pt/Al(2)O(3)/Ag resistor with a commercial silicon single-photon avalanc
158          Memristive devices, which combine a resistor with memory functions such that voltage pulses
159 n-compatible nanoscale protonic programmable resistors with highly desirable characteristics under ex
160              Technology based on memristors, resistors with memory whose resistance depends on the hi
161                    When the circuit includes resistors with nonlinear monotonic characteristic, the c
162 c signal propagation) acts as a steady-state resistor within the Raf-MEK-ERK kinase module.
163 ase family member IMP acts as a steady-state resistor within the Raf-MEK-ERK kinase module.

 
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