戻る
「早戻しボタン」を押すと検索画面に戻ります。 [閉じる]

コーパス検索結果 (1語後でソート)

通し番号をクリックするとPubMedの該当ページを表示します
1 he Ti-sites (we find that it is almost fully substitutional).
2  demonstrated by the discovery of a Co-Ta-Sn substitutional alloy oxide with tunable transparency, ca
3  the structure and catalytic properties of a substitutional alloy surface that is in equilibrium with
4                                 We show that substitutional alloying during the aqueous self-assembly
5 not applicable to describe the structures of substitutional alloys at high pressure.
6 and carbon retard the transformation whereas substitutional aluminium and vanadium influence the tran
7                          The distribution of substitutional aluminum (Al) atoms in zeolites affects m
8                                    Likewise, substitutional aluminum will decrease the ductility of t
9 e editing can be insertional, deletional, or substitutional and has been found in all major types of
10 P and TRIP, such alloys benefit from massive substitutional and interstitial solid solution strengthe
11               To ascertain the importance of substitutional and structural differences of the phenyla
12 ain-boundary structures, defects (vacancies, substitutionals, and clustering), and epitaxial relation
13 etermine the percentage of Pd(+4) and Pd(+2) substitutional at the Ti-sites (we find that it is almos
14  demonstrate the extension of the concept of substitutional atomic doping to nanometre-scale crystal
15 ied GaAs(1-x)Bi(x) alloy(,) in GaP(1-x)Bi(x) substitutional Bi creates localised impurity states lyin
16 pport in favor of a recombination-associated substitutional bias toward G and C in this species.
17           We found that approximately 22% of substitutional changes at the DNA level can be attribute
18                                              Substitutional chemical doping is one way of introducing
19  electronic properties through doping and/or substitutional chemistry.
20      X-ray characterizations reveal that the substitutional Co atoms form Co(2+) states in the graphi
21                We find that a nitrogen-boron substitutional defect (N(B)), which generates a mid-gap
22              However, the tendency for Li/Ni substitutional defects and off-stoichiometry makes funda
23 corroborated by the high formation energy of substitutional defects from density functional theory ca
24 ity of a compositional ordering arising from substitutional defects in the perovskite structure.
25 vironment after gentle annealing, are oxygen substitutional defects, rather than vacancies.
26 unded by a shell with lower concentration of substitutional defects.
27 tion behavior of oxygen vacancies and nickel substitutional defects.
28  be inserted both as interstitial and oxygen substitutional defects.
29 olayer hexagonal boron nitride that contains substitutional defects.
30 on of reactive oxide molecular-beam epitaxy, substitutional diffusion and in-situ angle-resolved phot
31                       Incomplete freezing of substitutional disorder at low temperature indicates a n
32                           The integration of substitutional dopants at predetermined positions along
33 s and transition levels of point defects and substitutional dopants in few-layer and bulk black phosp
34 croscopy, we investigate the distribution of substitutional dopants in nitrogen-doped graphene with r
35  goal, we show that gold nanocrystals act as substitutional dopants in superlattices of cadmium selen
36                                              Substitutional dopants such as C, Si, O or S do not give
37 -band ambipolar transistor operation without substitutional dopants, demonstrating the potential of e
38            Here we focus on interstitial and substitutional doping aiming to leverage these modificat
39 der quasi-metallic silicon microparticles by substitutional doping and increase lithium ion conductiv
40                       In monolayer graphene, substitutional doping during growth can be used to alter
41 t is surprising given the established use of substitutional doping for tuning the properties of elect
42                                              Substitutional doping in 2D semiconductor MoS(2) was inv
43 at understanding the effect of n- and p-type substitutional doping in the case of matrix-embedded and
44 s been devoted to interstitial, vacancy, and substitutional doping into the parent beta-Ag(2)Se struc
45                                  Homogeneous substitutional doping is verified by high-resolution low
46 ree-dimensional (3D) or bulk semiconductors, substitutional doping of acceptor or donor impurities is
47                            In atomic solids, substitutional doping of atoms into the lattice of a mat
48              Here, we demonstrate an in situ substitutional doping of Fe atoms into MoS(2) monolayers
49 ractions between the two elements and likely substitutional doping of Fe for Co.
50  to control material properties analogous to substitutional doping of ions in crystal lattices.
51    Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials,
52 heoretical examinations, confirming that the substitutional doping of Re at the W site leads to n-typ
53                                We report the substitutional doping of solid-state spiro-bis(5-methyl-
54 W(6+) and W(4+) in the TiO2 matrix, with the substitutional doping of W(4+) inducing an expansion of
55 tion metal elements tend to result in either substitutional doping or nanoclusters.
56                               In the case of substitutional doping, a significant decrease of the ban
57                                              Substitutional doping, involving the replacement of a ho
58 mical intercalation, defect engineering, and substitutional doping.
59  site that in turn arise as a consequence of substitutional doping.
60 dition, at least one mRNA is also subject to substitutional editing in which encoded C residues are c
61              We report evidence of extensive substitutional editing of mitochondrial mRNAs in the din
62 ency than insertional editing sites and that substitutional editing of neighboring sites appears to b
63 ding 3' poly(U) tail addition, and extensive substitutional editing of transcript sequences.
64      Through a systematic study with varying substitutional electron (P1 center) and [Formula: see te
65 for 10 of 96 possible pairs of complementary substitutional events.
66                                              Substitutional Ga(3+) ions trigger a plasmonic resonance
67 amorphous semiconductors, rather than simple substitutional geometries seen in tetrahedral semiconduc
68 rough the capture of a diffusing carbon by a substitutional group III atom.
69                                              Substitutional heteroatom doping of bottom-up engineered
70 al results and reveal the relationship among substitutional heteroatom doping, Fermi-level shifting,
71 e (WS[Formula: see text]) in the presence of substitutional Holmium impurities (Ho[Formula: see text]
72                                          The substitutional homogeneity of ((tbs)L)Fe2Mn(THF) was det
73 on (MISS) alloys by using a highly distorted substitutional host lattice, which enables solution of m
74 veals two orthogonal QPI patterns at lattice-substitutional impurity atoms.
75 es containing 10 mol % arachidonic acid as a substitutional impurity confirmed the ability of physiol
76 oach leads to unprecedented control over the substitutional incorporation of Sn into Si-Ge and yields
77              Counterintuitively, despite its substitutional lability, which is mechanistically requir
78                                     However, substitutional lattice doping in magnetic semiconductors
79 uding angular scans confirm that Sn occupies substitutional lattice sites and also provide evidence o
80                                          The substitutional lattice strain induced by Dy doping is su
81 (6)Te(8)(PEt(3))(6), were combined as random substitutional mixture, in three different ratios, in a
82 d the epitope that was defined previously by substitutional mutagenesis.
83 es involve recurrent events at a hotspot for substitutional mutation and/or gene conversion.
84                                              Substitutional mutation of nucleotides -237 to -231 abol
85 -tandem mass spectrometry, and site-directed substitutional mutational analysis.
86 st relationships can be explained via simple substitutional mutations, although the origins of some h
87 edge states by introducing a superlattice of substitutional N-atom dopants along the edges of a ZGNR.
88 pins coupled to NV(-) centres, in this case, substitutional nitrogen and neutral nitrogen-vacancy cen
89 N-doping site composed of two quasi-adjacent substitutional nitrogen atoms within the same graphene s
90                                              Substitutional nitrogen core doping introduces a pair of
91 n-vacancy (NV) centers in diamond coupled to substitutional nitrogen impurities, the so-called P1 cen
92  method to calculate the binding energies of substitutional nitrogen-vacancy pairs (NV) in Si(1 - x)G
93 itutions, an excess of which is generated by substitutional nonindependence.
94 ained for structures having Yb(3+) occupying substitutional octahedral sites.
95                             The existence of substitutional paramagnetic Mn dopant ions in mixed vale
96        Not only do our analyses suggest that substitutional patterns in heterochromatic and euchromat
97 uction of multicyclic scaffolds with precise substitutional patterns.
98  fixation probabilities in shaping long-term substitutional patterns.
99 pecific selective regimes impact genome-wide substitutional patterns.
100 (PCR) and a quantitative RNA assay that used substitutional PCR.
101    Analyses of recognition specificity using substitutional peptide libraries demonstrated that the a
102 f colloidal alloy equivalents: interstitial, substitutional, phase-separated, and intermetallic alloy
103         Here we show that, the energetics of substitutional phosphorous-vacancy pairs (E-centres) in
104 ls including [Formula: see text] alloys with substitutional point defects, periodic [Formula: see tex
105 ing regions, are significantly biased toward substitutional point mutations relative to the codons of
106 s exhibit high levels of both structural and substitutional polymorphism relative to linked euchromat
107 omposed of the minisatellite and surrounding substitutional polymorphisms, we have reconstructed the
108 m evolution of this segment from 10 flanking substitutional polymorphisms.
109 ed that hydrogen atoms preferentially occupy substitutional positions replacing pre-existing sulfur v
110 al length toward which the mutational and/or substitutional process is linearly biased is a crucial f
111     Linguistic evolution, unlike the genetic substitutional process, is dominated by events of concer
112                                           If substitutional processes across the genome are heterogen
113 nsitive to mutational damage, giving rise to substitutional rate differences between the two strands
114 eak repair in these regions, which generates substitutional rate variation.
115 te, which compensates for these vacancies by substitutional replacement and is responsible for the ge
116 arge states of sulfur vacancies (Vac(S)) and substitutional rhenium dopants (Re(Mo)) can be stabilize
117 ion that are difficult to model, for example substitutional saturation and composition heterogeneity.
118 ly underestimate the AB branch length due to substitutional saturation and poor model fit; that the b
119 c information, as well as with the degree of substitutional saturation within the molecule.
120 artitions and calibrations, with evidence of substitutional saturation, natural selection, and signif
121                    It is also predicted that substitutional segregation of boron atoms may contribute
122 e electron microscope, we show that a single substitutional silicon impurity in graphene induces a ch
123 l density of states for a matrix atom at the substitutional site, and the other is related to the hyb
124 ent of types of defects and the locations of substitutional sites.
125  atoms inside the w-AlN lattice occupying Al substitutional sites.
126 e grain boundaries or defect sites caused by substitutional Sn in the film.
127                             The carbide is a substitutional solid solution of Zr-Ti containing carbon
128 meworks, MOFs, as matrices for organic-based substitutional solid solutions allows for the incorporat
129 findings enabled us to prepare organic-based substitutional solid solutions with tunable chromaticity
130 to predict the strengthening of aluminium by substitutional solute atoms.
131 electronic structure can be used to identify substitutional solutes likely to interact strongly with
132  interaction of interstitial impurities with substitutional solutes strongly influences grain boundar
133 als (such as W and Ta) with transition-metal substitutional solutes.
134 ny reconstructive or long-range diffusion of substitutional solutes.
135  dichroism (MCD) spectra confirm homogeneous substitutional speciation of Co(2+) in the ZnSe QDs.
136 econd nearest neighbors for interstitial and substitutional Sr, respectively.
137 g in either half-sandwich-type structures or substitutional structures.
138 manium, arsenic atoms fully incorporate into substitutional surface lattice sites at room temperature
139 re favourable crystal field splitting in the substitutional tetrahedral site favoured for the singly

 
Page Top