ライフサイエンスコーパス: vapor deposition

1 in producing stable glasses during physical vapor deposition.

2 ding effect commonly encountered in chemical vapor deposition.

3 plying the concept in photoassisted physical vapor deposition.

4 f p-type Sb2Te3 nanowires, grown by chemical vapor deposition.

5 CNTs are grown on metal wires after chemical vapor deposition.

6 on was performed by plasma-enhanced chemical vapor deposition.

7 and single layer graphene grown by chemical vapor deposition.

8 ar cell, deposited by high-pressure chemical vapor deposition.

9 g graphene on 4H-SiC(0001) grown by chemical vapor deposition.

10 th single-layer graphene, formed by chemical vapor deposition.

11 esized by microwave plasma enhanced chemical vapor deposition.

12 synthesized from these templates by chemical vapor deposition.

13 rea graphene films prepared through chemical vapor deposition.

14 0.05 eV) than similar films made by chemical vapor deposition.

15 substrates using a low temperature chemical vapor deposition.

16 omplex colloids with glancing angle physical vapor deposition.

17 s multinary compounds compared with physical vapor deposition.

18 as a higher-quality alternative to chemical vapor deposition.

19 thacin (IMC) were prepared by using physical vapor deposition.

20 (CNTs) in water-assisted catalytic chemical vapor deposition.

21 ling pine trees were synthesized by chemical vapor deposition.

22 ilm conformality in low temperature chemical vapor deposition.

23 be block copolymer lithography, and chemical vapor deposition.

24 lms were grown via aerosol assisted chemical vapor deposition.

25 nologies ranging from combustion to chemical vapor deposition.

26 2D alpha-Mo(2) C crystals grown by chemical vapor deposition.

27 oS2 grown on silicon oxide by using chemical vapor deposition.

28 W1-x S2y Se2(1-y) is reported using chemical vapor deposition.

29 ell hybrid foam is fabricated using chemical vapor deposition.

30 epilayers prepared by metal-organic chemical vapor deposition.

31 axially grown on MoS2 monolayer via chemical vapor deposition.

32 by a novel method of super-cooling chemical-vapor-deposition.

33 enecarboxylate) via low-temperature chemical vapor deposition (50 degrees C) is reported.

34 d in a single-step aerosol-assisted chemical vapor deposition (AACVD) process.

35 50 degrees C using aerosol-assisted chemical vapor deposition (AACVD) with pyridine as the solvent.

36 By a novel in situ chemical vapor deposition, activated N-doped hollow carbon-nanotu

37 itaxy, atomic layer deposition, and chemical vapor deposition, along with their challenges, are also

38 combining particle lithography with organic vapor deposition and electroless deposition of iron oxid

39 a arc discharge, laser ablation and chemical vapor deposition and functionalizing carbon nanotubes th

40 Chemical vapor deposition and growth dynamics of highly anisotrop

41 tages of two large-area techniques: chemical vapor deposition and inkjet-printing.

42 0-250 nm of PSO via plasma-enhanced chemical vapor deposition and then functionalized with either oct

43 signal by growing graphene through chemical vapor deposition and, second, to control the immobilizat

44 ully controlled Raman spectroscopy, physical vapor deposition, and lift-off processes.

45 nesses, grown in a microwave plasma chemical vapor deposition apparatus.

46 Here we present a chemical vapor deposition approach to TLG growth that yields grea

47 hods using mechanical agitation and chemical vapor deposition are adopted.

48 raphene-catalyst interaction during chemical vapor deposition are investigated using in situ, time- a

49 ity of large-area graphene grown by chemical vapor deposition are often limited by the presence of wr

50 s, and diamond films fabricated via chemical vapor deposition are the most popular organic bioelectro

51 area monolayer graphene produced by chemical vapor deposition are used for label-free electrical dete

52 yed nanocatalysts are generated via chemical vapor deposition-assisted facile one-pot synthesis.

53 of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 degrees C i

54 faces of self-assembled monolayers (SAMs) by vapor deposition at cryogenic temperatures (approximatel

55 d, grown using atmospheric pressure chemical vapor deposition, at 450 and 600 degrees C, from TiCl(4)

56 nitride, and boride are grown using chemical vapor deposition by heating a tantalum-copper bilayer wi

57 Here we show that physical vapor deposition can substantially improve the photostab

58 combinatorial atmospheric pressure chemical vapor deposition (cAPCVD) can be used as a synthetic too

59 d growth of graphene under a plasma chemical vapor deposition condition.

60 on nanotubes (MWCNTs) fabricated by chemical vapor deposition contain magnetic nanoparticles.

61 Chemical vapor deposition creates a continuous graphene coating p

62 phene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared u

63 carbon nanotubes (CNTs) by thermal chemical vapor deposition (CVD) and graphitization of solid amorp

64 on surface-passivated Si wafers via chemical vapor deposition (CVD) and microstructured using inducti

65 ride (h-BN) films are prepared from chemical vapor deposition (CVD) and readily transferred onto poly

66 ulating SiO(2)/Si via seed-promoted chemical vapor deposition (CVD) and substrate engineering.

67 graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus cont

68 um disulfide (MoS2 ) synthesized by chemical vapor deposition (CVD) are studied using a local probe m

69 olite-like carbons are prepared via chemical vapor deposition (CVD) at 800 or 850 degrees C using zeo

70 Single crystal diamond produced by chemical vapor deposition (CVD) at very high growth rates (up to

71 immobilized onto biomaterials by a chemical vapor deposition (CVD) coating strategy.

72 The predoping of N by chemical vapor deposition (CVD) dramatically increases the Ni dop

73 e3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor.

74 In most applications based on chemical vapor deposition (CVD) graphene, the transfer from the g

75 polymer" parylene-C, to conducting chemical vapor deposition (CVD) grown graphene.

76 We demonstrate the chemical vapor deposition (CVD) growth of 2-lobed symmetrical cur

77 ations of the mechanisms underlying chemical vapor deposition (CVD) growth of fibrous carbon nanostru

78 Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) p

79 ect control over the product during chemical vapor deposition (CVD) growth of SWNT is desirable, and

80 Chemical vapor deposition (CVD) has become a promising approach f

81 re grown on a sharp tungsten tip by chemical vapor deposition (CVD) in a stepwise manner within a sin

82 ic carbon nanoelectrode obtained by chemical vapor deposition (CVD) inside a quartz nanopipette.

83 Chemical vapor deposition (CVD) is a promising method for their c

84 s temperatures in a plasma-enhanced chemical vapor deposition (CVD) is demonstrated using multiphase,

85 gradually shrinking basal planes by chemical vapor deposition (CVD) is demonstrated.

86 area TMDs on graphene substrates by chemical vapor deposition (CVD) is limited by slow lateral growth

87 Graphene produced by chemical vapor deposition (CVD) is polycrystalline, and scatterin

88 ene film by molten copper-catalyzed chemical vapor deposition (CVD) is reported.

89 single-layer WS2 film by a two-step chemical vapor deposition (CVD) method followed by a laser thinni

90 We describe a chemical vapor deposition (CVD) method for the surface modificati

91 Especially, the facile chemical vapor deposition (CVD) method has enabled morphological

92 )B) nanowires were synthesized by a chemical vapor deposition (CVD) method on either silicon dioxide

93 catalytically activated silica by a chemical vapor deposition (CVD) method using hexane as the carbon

94 matic molecules as the seeds in the chemical vapor deposition (CVD) method.

95 In this work, ethanol-chemical vapor deposition (CVD) of a grown p-type semiconducting

96 The method is based on chemical vapor deposition (CVD) of a photodefinable coating, poly

97 structures form during Ni-catalyzed chemical vapor deposition (CVD) of ammonia borane.

98 engineered spacer layer prepared by chemical vapor deposition (CVD) of functional polymers.

99 ngle-wall and multi-wall CNTs using chemical vapor deposition (CVD) of methane without the presence o

100 forming hydrophobic barriers using chemical vapor deposition (CVD) of trichlorosilane (TCS) on a chr

101 nolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates

102 films are prepared predominantly by chemical vapor deposition (CVD) on a variety of substrates.

103 tube (CT) reactor for roll-to-roll chemical vapor deposition (CVD) on flexible substrates, and its a

104 ubstrate-scale growth of MoS2 using chemical vapor deposition (CVD) on non-birefringent thermal oxide

105 phene nanoribbon (GNR) formation by chemical vapor deposition (CVD) on top of Au(111) surfaces.

106 f single layers can be done also by chemical vapor deposition (CVD) or via reduction of silicon carbi

107 Chemical vapor deposition (CVD) polymerization directly synthesiz

108 Polymers prepared by chemical vapor deposition (CVD) polymerization have found broad a

109 The chemical vapor deposition (CVD) polymerization of metalloporphyri

110 -p-xylylene), which are prepared by chemical vapor deposition (CVD) polymerization of the correspondi

111 Chemical vapor deposition (CVD) polymerization utilizes the deliv

112 oly-p-xylylene coatings prepared by chemical vapor deposition (CVD) polymerization, for surface plasm

113 by a unique, single-step, catalytic chemical vapor deposition (CVD) process consisting of dissolved c

114 we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive and high-

115 e we report a controllable two-step chemical vapor deposition (CVD) process for lateral and vertical

116 owed by carbon deposition through a chemical vapor deposition (CVD) process with methane as a carbon

117 iothermic reduction with subsequent chemical vapor deposition (CVD) process.

118 Graphene growth on metal films via chemical vapor deposition (CVD) represents one of the most promis

119 macroporous graphene foam grown by chemical vapor deposition (CVD) served as the scaffold of the fre

120 Here, we report a facile chemical vapor deposition (CVD) strategy to synthesize the promis

121 Here, we report high-yield thermal chemical vapor deposition (CVD) synthesis of CNTs catalyzed by re

122 using the probe in conjunction with chemical vapor deposition (CVD) techniques.

123 A film of CNTs was deposited by chemical vapor deposition (CVD) to form the stationary phase in t

124 graphene synthesized using scalable chemical vapor deposition (CVD) to polycarbonate track-etched sup

125 Samples prepared by chemical vapor deposition (CVD) using pyridine on copper exhibit

126 nert CNT arrays were synthesized by chemical vapor deposition (CVD) using thin films of Fe and Co as

127 kes of few-layered structures using chemical vapor deposition (CVD) wherein the top layers are relati

128 high temperature (HPHT) growth and chemical vapor deposition (CVD), how each is allowing ever more p

129 ojunction perovskite solar cells by chemical vapor deposition (CVD), with a solar power conversion ef

130 Chemical vapor deposition (CVD)-grown classical transition metal

131 ter the first cycle shows unlimited chemical vapor deposition (CVD)-type growth.

132 nanowires prepared by Au-catalyzed chemical vapor deposition (CVD).

133 g applications of graphene grown by chemical vapor deposition (CVD).

134 monly used standard copper foils in chemical vapor deposition (CVD).

135 rected nanotube growth method using chemical vapor deposition (CVD).

136 aman active modes in SWNTs grown by chemical vapor deposition (CVD).

137 e by direct current plasma enhanced chemical vapor deposition (DC-PECVD) method.

138 of aluminum during ultrahigh vacuum physical vapor deposition, dense arrays of particles are created

139 ayer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration

140 mily of glasses rapidly obtained by physical vapor deposition directly into the solid state, endowed

141 Electrostatic Spray-Assisted Vapor Deposition (ESAVD) is a non-vacuum and cost-effect

142 It is established by chemical vapor deposition experiments and first-principle calcula

143 , through direct synthesis from solution and vapor deposition experiments under conditions consistent

144 The floating catalyst chemical vapor deposition (FC-CVD) process permits macro-scale as

145 n in ZnO NWs grown by rapid thermal chemical vapor deposition, from electron paramagnetic resonance s

146 ture based on multiple intercalated chemical vapor deposition graphene monolayers distributed in an o

147 n up directions for applications of chemical vapor deposition graphene on flexible substrates.

148 e direct transfer via lamination of chemical vapor deposition graphene onto different flexible substr

149 ed on oxidized silicon wafers using chemical vapor deposition grown carbon nanotubes that were functi

150 Here we demonstrate fully-suspended chemical vapor deposition grown graphene microribbon arrays that

151 nt of the generated hot carriers on chemical vapor deposition grown large area nanopatterned monolaye

152 Chemical vapor deposition grown multilayer graphene was transferr

153 owever, irreversible degradation of chemical vapor deposition-grown monolayer TMDs via oxidation unde

154 s are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride

155 e bilayer grain boundaries (GBs) in chemical-vapor-deposition-grown large-area graphene are identifie

156 Chemical vapor deposition growth of 1T' ReS2x Se2(1-x) alloy mono

157 In this work, chemical vapor deposition growth of highly crystalline few-layer

158 introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride

159 The chemical vapor deposition growth of unusual arrangements of singl

160 he temperature-swing stage in the sequential vapor deposition growth process allowed us to cool the e

161 atoms into MoS(2) monolayers in the chemical vapor deposition growth.

162 Vapor deposition has been used to create glassy material

163 ted using hyperbaric-pressure laser chemical vapor deposition (HP-LCVD).

164 methacrylate) (PPMA) via initiated chemical vapor deposition (iCVD) and poly(allylamine) (PAAm) via

165 demonstrated by employing initiated chemical vapor deposition (iCVD) for polymerization of the resist

166 article, the technique of initiated chemical vapor deposition (iCVD) is evaluated for electret applic

167 n a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures using methane

168 cessible through liquid quenching, aging, or vapor deposition in the dark, indicating the formation o

169 It may form, e.g., by water freezing or vapor deposition in the Earth's atmosphere or in extrate

170 ince its successful development via chemical vapor deposition in the past decade.

171 Physical vapor deposition is commonly used to prepare organic gla

172 ers (CNFs) grown by plasma enhanced chemical vapor deposition is found to be effective for the simult

173 Chemical vapor deposition is one of the most promising approaches

174 e-crystal domains on Cu foils using chemical vapor deposition is reported.

175 lms with Re atoms via metal-organic chemical vapor deposition is reported.

176 eterostructure via direct growth by chemical vapor deposition is reported.

177 Graphene grown by chemical vapor deposition is transferred by a very simple, yet ef

178 iophene) (PEDOT) grown by oxidative chemical vapor deposition is used to fabricate transparent and co

179 Chemical vapor deposition is used to grow single layer graphene o

180 Initiated chemical vapor deposition is used to synthesize a novel alternati

181 A variant of initiated chemical vapor deposition is used to synthesize a thin film that

182 Initiated chemical vapor deposition is used to synthesize a thin film that

183 he bottom up, called barrier-guided chemical vapor deposition, is introduced.

184 e surface, resulting in lower density during vapor deposition, it also acts to form more networked st

185 lm on wound Cu foil by low pressure chemical vapor deposition (LPCVD) method.

186 akes were derived from low pressure chemical vapor deposition (LPCVD) method.

187 e electrodes) grown by low pressure chemical vapor deposition (LPCVD) system with VLS procedure to el

188 High pressure chemical vapor deposition may open a new way to low cost depositi

189 Here, we design a passivator-assisted vapor deposition method for the growth of two-dimensiona

190 A chemical vapor deposition method is developed for thickness-contr

191 An oxygen-assisted hydrocarbon chemical vapor deposition method is developed to afford large-sca

192 A facile chemical vapor deposition method to prepare single-crystalline VS

193 were first synthesized by a simple chemical vapor deposition method using Na as the dopant source.

194 The vapor deposition method was designed to overcome current

195 synthesis of novel materials by the chemical vapor deposition method.

196 l tellurides are synthesized by the chemical vapor deposition method.

197 teral fusion into wider AGNRs, by a chemical vapor deposition method.

198 Herein, we develop a simple chemical-vapor-deposition method to fabricate graphene-isolated-A

199 ilicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMO

200 Most chemical vapor deposition methods for transition metal dichalcoge

201 cal properties similar to the films grown by vapor deposition methods.

202 1-x is synthesized by metal organic chemical vapor deposition (MOCVD) for solar hydrogen production.

203 the use of few-layer metal organic chemical vapor deposition (MOCVD) grown BN as a two-dimensional b

204 a standard QCM using metal-organic chemical-vapor deposition (MOCVD).

205 Oxidative chemical vapor deposition (oCVD) of conductive polymers offers a

206 or printing, specifically oxidative chemical vapor deposition (oCVD), is demonstrated.

207 -organic framework crystals through chemical vapor deposition of a dimolybdenum paddlewheel precursor

208 ystal-like order can be produced by physical vapor deposition of a molecule without any equilibrium l

209 carbon nanopipets (CNP) prepared by chemical vapor deposition of carbon into prepulled quartz capilla

210 Si/SiO(2) surfaces is reported from chemical vapor deposition of Cd[(TeP(i)Pr(2))(2)N](2).

211 f the template membrane, and then sequential vapor deposition of Cr, SiO(2), Cr, Au, and Pt on one si

212 pens up a new avenue for controlled chemical vapor deposition of crystals through resonant vibrationa

213 Here, we report physical vapor deposition of Cu thin films on large-format ( appr

214 ene can grow on metal substrates by chemical vapor deposition of hydrocarbons.

215 of small-molecules, plasma enhanced chemical vapor deposition of inorganic functional thin films and

216 direct laser writing and selective physical vapor deposition of magnetic materials.

217 graphene replicas, fabricated using chemical vapor deposition of methane.

218 rgy electron irradiation during the chemical vapor deposition of model Ziegler-Natta catalysts can be

219 e (PbS) nanowire "pine trees" using chemical vapor deposition of PbCl(2) and S precursors and systema

220 ostructure can modulate the rate of chemical vapor deposition of SiO2 and TiO2 with nanometer-scale s

221 The method combines physical vapor deposition of small-molecules, plasma enhanced che

222 2-x)) with widths down to 10 nm via chemical vapor deposition of the single-source precursor Mn(CO)(5

223 were produced via aerosol-assisted chemical vapor deposition of titanium ethoxide and dopant concent

224 on the surface of H:Si through a sequence of vapor deposition of titanium tetra(tert-butoxide) (1) an

225 source molecular precursors for the chemical vapor deposition of UO(2) thin films.

226 n synthesized as precursors for the chemical vapor deposition of WN(x)C(y), a material of interest fo

227 Recent experimental chemical vapor depositions of silicon at extreme pressures of ~ 5

228 ar self-assembly that occurs during physical vapor depositions of titanium (Ti) onto specifically con

229 nction fibers made by high pressure chemical vapor deposition offer new opportunities in textile phot

230 m was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nan

231 lity single crystals of graphene by chemical vapor deposition on copper (Cu) has not always achieved

232 fer of monolayer graphene, grown by chemical vapor deposition on copper foil, to fibers commonly used

233 Indeed, growth of the BL-ice I through vapor deposition on graphene/Pt(111) substrate has been

234 r shock freezing of the aqueous solutions or vapor deposition on ice grains, exhibited unequivocal ba

235 Growth of graphene by chemical vapor deposition on metal supports has become a promisin

236 of uniform Ge nanowires (GeNWs) by chemical vapor deposition on preformed, monodispersed seed partic

237 ecylacrylate) chains with initiated chemical vapor deposition on silicon substrates.

238 ock-freezing of DPE aqueous solutions or DPE vapor-deposition on pure ice grains, was studied in the

239 olayers of 1-halohexanes were formed through vapor deposition onto graphite surfaces in ultrahigh vac

240 cated by the growth of BDD films by chemical vapor deposition onto sharpened tungsten wires.

241 Semiconductors deposited by vapor deposition onto the crystalline OTS SAM grow in a

242 r electrode using a plasma-enhanced chemical vapor deposition (PECVD) method and function as the sens

243 was treated with a plasma-enhanced chemical vapor deposition (PECVD) of perfluorohexane creating a h

244 Using plasma-enhanced chemical vapor deposition (PECVD) process at low temperature, the

245 hotolithography and plasma-enhanced chemical vapor deposition (PECVD) techniques, followed by subsequ

246 often deposited by plasma-enhanced chemical vapor deposition (PECVD), currently attract a great deal

247 ous Si deposited by plasma-enhanced chemical vapor deposition (PECVD).

248 n, we demonstrate the usefulness of chemical vapor deposition polymerization for surface modification

249 l groups on silica surfaces through a simple vapor deposition process employing different ratios of t

250 A facile vacuum-assisted vapor deposition process has been developed to control t

251 pecifically, a pulsed metal-organic chemical vapor deposition process is developed, where periodic in

252 anotubes (CNTs) via a novel ethanol chemical vapor deposition process is presented.

253 Besides annealing, we developed a chemical vapor deposition process to use Cu NPs as catalytic subs

254 es are synthesized using a one-step chemical vapor deposition process with rapid cooling.

255 s been synthesized using a one-step chemical vapor deposition process.

256 the infrared range by an efficient chemical vapor deposition process.

257 osition) and MOCVD (= metal-organic chemical vapor deposition) processes in materials science, e.g. f

258 that was based on BDPM-But and fabricated by vapor deposition provided a maximum electron mobility of

259 Physical vapor deposition (PVD) and electrodeposition were used f

260 Glasses formed by physical vapor deposition (PVD) are an interesting new class of m

261 grown by molecular beam epitaxy and chemical vapor deposition, respectively.

262 We find that vapor deposition results in growth of stacking disordere

263 Herein, a chemical vapor deposition route to ultrathin CoSe nanoplates with

264 hemically deposited Au for a long time or by vapor deposition, shifted the stripping potential more p

265 Gas-phase methods, including chemical vapor deposition, show broader promise for the preparati

266 , and large graphene films grown by chemical vapor deposition showed p-type doping accompanied by a c

267 al efficient when compared with conventional vapor deposition since the material is directed to the p

268 ility of current techniques such as chemical vapor deposition, spray and dip coating, and vacuum filt

269 s via a substrate-buffer-controlled chemical vapor deposition strategy.

270 polymeric carbon nitride (PCN) by a chemical vapor deposition strategy.

271 islands of MoS2 grown via a refined chemical vapor deposition synthesis technique.

272 ized in a Microwave Plasma Assisted Chemical Vapor Deposition System.

273 combined with the microwave-plasma chemical vapor deposition technique to explore metastable synthes

274 e fabricated by a strain-engineered chemical vapor deposition technique, giving ~5000 scales of ~10 u

275 ibution, DC magnetron sputtering, a physical vapor deposition technique, is applied to the preparatio

276 of micrometers are synthesized by a chemical vapor deposition technique.

277 trated employing a microwave plasma chemical vapor deposition technique.

278 -cost and scalable aerosol assisted chemical vapor deposition technique.

279 ons of silicon nitride diatomics in chemical vapor deposition techniques and interstellar environment

280 iamond grown using microwave plasma chemical vapor deposition techniques is found to be ideal as the

281 Vapor deposition techniques were utilized to synthesize

282 eparation of metallic nanorods from physical vapor deposition through self-organized seeds and experi

283 rs were grown using plasma enhanced chemical vapor deposition to fabricate nanoelectrode arrays in a

284 ops a new growth strategy employing chemical vapor deposition to grow monolayer 2D alloys of Re-doped

285 d previously by electrically-heated chemical vapor deposition under vacuum conditions were relatively

286 Floating catalyst chemical vapor deposition uniquely generates aligned carbon nanot

287 on undoped Si by microwave-assisted chemical vapor deposition using a 4-h growth with a 0.5% CH4/H2 s

288 means of microwave plasma-assisted chemical vapor deposition using in-situ-evaporated Fe catalysts.

289 centimeters on copper substrates by chemical vapor deposition using methane.

290 a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resol

291 s over the entire wafer in a single chemical vapor deposition (VCD) process.

292 rdness (up to 37 GPa) B(50)C(2) via chemical vapor deposition was achieved.

293 by rf sputtering or plasma enhanced chemical vapor deposition were found to deteriorate due to struct

294 s and pressures compared to thermal chemical vapor deposition where [111]-directed Si NWs are predomi

295 WNTs grown on SiO2/Si substrates by chemical vapor deposition with and without metal contacts.

296 rine doped tin oxide (FTO) films by chemical vapor deposition with inclusions of different additives

297 soporous graphene particles through chemical vapor deposition with magnesium-oxide particles as the c

298 oil substrates using rapid atmospheric flame vapor deposition without any chamber or walls.

299 rystal iron germanium nanowires via chemical vapor deposition without the assistance of any catalysts

300 NG) sheets via atmospheric-pressure chemical vapor deposition, yielding a unique N-doping site compos